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Nexperia USA Inc. MMBZ33VBQB-QZ
- Part No.:
- MMBZ33VBQB-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
MMBZ33VBQB-QZ.pdf
- Description:
- MMBZ33VBQB-Q/SOT8015/DFN1110D-
- Quantity:
- Payment:
- Shipping:
Inventory:9,599
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Product details
Overview
MMBZ33VBQB-QZ from Nexperia is a low-capacitance, bidirectional dual-line ESD protection diode in a DFN1110D-3 (SOT8015) package, designed to protect two signal lines against IEC 61000-4-2/ISO 10605 transients up to 20 kV. It features a 27 V reverse stand-off voltage, 33 V clamping voltage at 2.5 A, and 8 pF typical capacitance - enabling high-speed interface protection in automotive ECUs and portable electronics.
For engineers reviewing the MMBZ33VBQB-QZ datasheet, MMBZ33VBQB-QZ pinout, MMBZ33VBQB-QZ application, or MMBZ33VBQB-QZ equivalent, key selection criteria include bidirectional clamping performance, side-wettable flank compatibility with automated optical inspection (AOI), AEC-Q101 qualification, and ultra-low 1.1 mm × 1.0 mm footprint for space-constrained PCB layouts.
Technical Context
This device implements a dual-cathode, common-cathode configuration with two independent ESD protection paths (Pin 1→Pin 3 and Pin 2→Pin 3), each rated for 27 V standoff and 33 V clamping at 2.5 A (8/20 µs). Its bidirectional operation eliminates polarity sensitivity during board-level transient events.
The DFN1110D-3 package integrates side-wettable flanks for solder joint quality verification via AOI, while its 0.48 mm profile and 0.65 mm pitch support fine-pitch routing in high-density automotive and mobile designs. Thermal resistance (Rthj-a) is optimized for 150 °C max junction temperature under repetitive surge conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Stand-off Voltage (VRWM) | 27 V - Maximum continuous operating voltage before conduction begins; ensures no leakage during normal signal swing. |
| Clamping Voltage (VCL) | 33 V at 2.5 A (8/20 µs) - Peak voltage seen by protected circuit during worst-case surge; limits stress on downstream ICs. |
| ESD Rating | ±20 kV per IEC 61000-4-2 contact discharge - Validates robustness against human-body-model-like discharges in real-world handling. |
| Diode Capacitance (Cd) | 8 pF at 1 MHz, 0 V - Enables use on USB 2.0, HDMI, and MIPI data lines without signal integrity degradation. |
| Peak Pulse Current (IPPM) | 2.5 A (8/20 µs) - Sustains defined surge energy without parametric shift or failure; verified per IEC 61000-4-5. |
| AEC-Q101 Qualification | Qualified - Confirms reliability for automotive applications including engine control, infotainment, and ADAS sensor interfaces. |
| Package | DFN1110D-3 (SOT8015) - 1.1 mm × 1.0 mm × 0.48 mm body with side-wettable flanks for AOI-compatible reflow assembly. |
Pinout & Package
DFN1110D-3 (SOT8015) is an ultra-thin, leadless plastic package with side-wettable flanks, 0.65 mm pitch, and 3 terminals. Its 1.1 mm × 1.0 mm footprint supports high-density routing and automated optical inspection of solder joints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (Cathode 1) | Return path for ESD current from Line 1; connects to protected signal trace and common cathode (Pin 3). |
| 2 | K2 (Cathode 2) | Return path for ESD current from Line 2; enables independent protection of two bidirectional data lines. |
| 3 | CC (Common Cathode) | Shared ground reference node; must be routed directly to low-impedance system ground to minimize clamping overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional dual-line protection | Two independent ESD paths (Pin 1↔3 and Pin 2↔3) eliminate need for polarity-aware placement on differential or AC-coupled lines. |
| Low 8 pF capacitance | Preserves signal rise/fall times on high-speed interfaces (e.g., USB 2.0, audio codecs) without added jitter or attenuation. |
| AEC-Q101 qualified | Validated for automotive under temperature cycling, HTRB, and ESD stress - suitable for ECU, telematics, and body control modules. |
| Side-wettable flanks (SWF) | Enables automated optical inspection of solder fillets on all three terminals, improving process yield in SMT production. |
| Ultra-compact 1.1 mm × 1.0 mm footprint | Reduces PCB area by >50% vs. SO-8 or SOT23 alternatives - critical for space-limited portable and wearable designs. |
Applications
| Automotive ECU Protection | USB 2.0 Interface Protection |
|---|---|
|
Use Scenario: Protecting CAN FD and LIN bus signal pairs in engine control units exposed to under-hood ESD events. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed within 2 mm of connector entry point to clamp fast-rising ESD pulses before reaching MCU I/O pins. Use Value: Prevents latch-up or gate oxide damage in 3.3 V/5 V automotive microcontrollers while maintaining <1 ns response time. |
Use Scenario: Safeguarding D+ and D− lines of USB 2.0 ports in infotainment head units against user-handling ESD. IC Role / Device Role / Timing Role: Low-capacitance shunt protector ensuring <1.5% signal distortion at 480 Mbps while meeting IEC 61000-4-2 Level 4 immunity. Use Value: Eliminates need for series resistors or RC filters that degrade eye diagram margin, preserving full USB 2.0 compliance. |
| MIPI D-PHY Camera Interface | Audio Codec Line Protection |
|
Use Scenario: Shielding high-speed MIPI D-PHY clock and data lanes between image sensor and SoC in ADAS cameras. IC Role / Device Role / Timing Role: Dual-line ESD clamp placed adjacent to FPC connector to suppress transients without adding skew between differential pairs. Use Value: Maintains <10 ps inter-pair skew and <0.1 UI jitter increase at 1.5 Gbps, supporting ISO 26262 functional safety requirements. |
Use Scenario: Protecting analog audio input/output lines (e.g., headset jack, speaker amp inputs) in smartphones and tablets. IC Role / Device Role / Timing Role: Low-leakage (<50 nA) bidirectional clamp preventing pop/click artifacts and DC offset shifts during ESD events. Use Value: Ensures <–90 dB THD+N performance remains unaffected during 20 kV contact discharge testing per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-line ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4202MR6T1G | Higher 12 pF capacitance; 24 V VRWM; SOT-23-6 package (2.9 mm × 1.3 mm) | Less suitable for >200 Mbps interfaces; larger footprint increases routing complexity in compact designs. | Select when legacy SOT-23 assembly infrastructure exists and lower clamping voltage (28 V) is prioritized over size. |
| Vishay VEML3328 | Unidirectional configuration; requires separate ground return per line; 10 pF capacitance | Not suitable for AC-coupled or differential signals without external biasing; adds design overhead. | Prefer only if unidirectional protection suffices and existing layout accommodates discrete per-line placement. |
Compared with NUP4202MR6T1G and VEML3328, MMBZ33VBQB-QZ delivers superior high-speed interface compatibility via its 8 pF capacitance and 1.1 mm × 1.0 mm DFN1110D-3 package, while its bidirectional common-cathode architecture simplifies PCB layout and reduces component count in dual-signal protection schemes.
Availability
MMBZ33VBQB-QZ is available at Aetrix Electronics and suitable for automotive electronic control units, USB 2.0 interface protection, and MIPI D-PHY camera modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for MMBZ33VBQB-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in ESD protection, MOSFETs, and bipolar transistors.
This device belongs to Nexperia's Automotive-Qualified ESD Protection portfolio, engineered specifically for robust transient suppression in safety-critical vehicle subsystems and high-speed consumer interfaces.
FAQ
What is the maximum peak pulse current rating for MMBZ33VBQB-QZ?
The device is rated for 2.5 A peak pulse current under IEC 61000-4-5 8/20 µs waveform conditions. This value is validated per absolute maximum ratings and confirmed in both quick reference and limiting values tables of the official Nexperia datasheet dated 18 July 2024.
Does MMBZ33VBQB-QZ support bidirectional signal lines like USB D+ and D−?
Yes - its dual-cathode, common-cathode topology provides symmetrical clamping for both positive and negative transients on each protected line, making it ideal for AC-coupled, differential, or bidirectional data buses without polarity constraints.
How does the DFN1110D-3 package enable automated optical inspection?
The package features side-wettable flanks (SWF) - exposed metal on the vertical edges of the terminals - allowing AOI systems to verify solder fillet formation and wetting quality on all three pins, improving first-pass yield in high-volume SMT lines.
Is MMBZ33VBQB-QZ qualified for under-hood automotive environments?
Yes - it is fully qualified to AEC-Q101, including extended temperature operation from –55 °C to +150 °C ambient, and has passed stress tests for thermal cycling, high-temperature reverse bias, and ESD robustness required for engine bay and powertrain applications.
MMBZ33VBQB-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 3-XDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 2
- Voltage - Reverse Standoff (Typ):
- 27V (Max)
- Voltage - Breakdown (Min):
- 28V
- Voltage - Clamping (Max) @ Ipp:
- 44V
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 6pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1110D-3
MMBZ33VBQB-QZ FAQ
1.How can I place an order for MMBZ33VBQB-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ33VBQB-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ33VBQB-QZ reliable?
The price and inventory of MMBZ33VBQB-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ33VBQB-QZ is usually 5 days.
3.What payment methods are accepted for MMBZ33VBQB-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ33VBQB-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ33VBQB-QZ?
MMBZ33VBQB-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ33VBQB-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ33VBQB-QZ?
For technical support, including MMBZ33VBQB-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ33VBQB-QZ requirements.
6.How does Aetrix verify that MMBZ33VBQB-QZ is sourced from the original manufacturer or authorized distributors?
All MMBZ33VBQB-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ33VBQB-QZ meets industry standards.
7.What is the process for return or replacement of MMBZ33VBQB-QZ?
All MMBZ33VBQB-QZ units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ33VBQB-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ33VBQB-QZ part is unused and in its original packaging.
Return procedure for MMBZ33VBQB-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ33VBQB-QZ Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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