Nexperia USA Inc. MMBZ6V8A-TR

Overview

MMBZ6V8A-TR from Nexperia is a unidirectional double ESD protection diode in common-anode SOT23 configuration, designed for transient overvoltage protection of two signal lines. It delivers 30 kV IEC 61000-4-2 contact ESD immunity, 4.5 V reverse standoff voltage (VRWM), 13.6 V typical clamping voltage at 15 A, and ultra-low 150 pF capacitance at 1 MHz - enabling high-speed interface protection in portable electronics.

For engineers reviewing the MMBZ6V8A-TR datasheet, MMBZ6V8A-TR pinout, MMBZ6V8A-TR application, or MMBZ6V8A-TR equivalent, key selection criteria include bidirectional single-line vs. unidirectional dual-line protection mode, low-capacitance signal integrity preservation, clamping performance under 8/20 µs surges, and thermal resistance to ambient (417 K/W) in FR4 layouts.

Technical Context

This device implements a dual-cathode, common-anode topology enabling either independent unidirectional protection of two lines or combined bidirectional protection of one line. Its silicon avalanche structure provides precise 6.8 V nominal breakdown (VBR) with ±0.5 V tolerance and 3 mV/K temperature coefficient.

Clamping behavior is characterized under standardized 8/20 µs surge pulses (IEC 61000-4-5) and ESD pulses (IEC 61000-4-2), delivering 13.6 V dynamic clamping at 15 A while maintaining sub-10 nA leakage at VRWM = 4.5 V - critical for battery-powered signal integrity.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 × 1.3 × 1.0 mm body, optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NUP4105MR6T1G and ESDE0402MUTAG, the MMBZ6V8A-TR uniquely balances dual-line configurability, 150 pF capacitance suitable for mid-speed interfaces, and SOT23 manufacturability - making it optimal for cost-sensitive consumer port protection where layout flexibility matters more than minimum capacitance.

Availability

MMBZ6V8A-TR is available at Aetrix Electronics and suitable for USB interface protection, audio line ESD suppression, cellular handset keypad lines, and automotive infotainment button inputs requiring stable component supply across production ramps and long-life designs.

Supply support for MMBZ6V8A-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in ESD protection, MOSFETs, and bipolar transistors.

The MMBZ6V8A-TR belongs to Nexperia's low-capacitance ESD protection diode family, engineered specifically for robust, cost-effective I/O line hardening in portable and interface-dense consumer electronics.

FAQ

What is the correct PCB layout practice for MMBZ6V8A-TR to ensure optimal ESD performance?

Place the device within 2 mm of the protected connector, minimize trace length between pins 1/2 and the signal lines, route pin 3 (CA) directly to a solid ground plane with multiple vias, avoid parallel routing of protected and unprotected traces, and use ground fill around the device to reduce loop inductance - all per Nexperia's Application Note AN10742.

Can MMBZ6V8A-TR be used for bidirectional protection of a single high-speed data line?

Yes - connect the signal line to both pins 1 and 2, and tie pin 3 (CA) to ground. This forms a symmetrical bidirectional clamp with 6.8 V breakdown in both directions, validated for I²C, UART, and low-speed SPI lines where 150 pF capacitance does not impair rise time.

Does MMBZ6V8A-TR meet automotive qualification standards?

No - the MMBZ6V8A-TR is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling, or humidity testing. For automotive infotainment button inputs, it may be used only in non-safety-critical, cabin-consumer functions with customer-assumed risk and validation per ISO 10605.

How does thermal resistance affect MMBZ6V8A-TR's surge handling in sustained transient conditions?

With Rth(j-a) = 417 K/W on FR4, the junction temperature rise under a single 15 A, 8/20 µs pulse is negligible (<1 °C), but repetitive surges require attention: >10 pulses/second risks thermal runaway. Use Rth(j-sp) = 100 K/W to ground vias for improved heat dissipation in high-duty-cycle applications.