Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated MMDT2222A-7

Part No.:
MMDT2222A-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT2222A-7.pdf
Description:
TRANS 2NPN 40V 600MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,946

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMDT2222A-7 from Diodes Incorporated is a dual NPN small-signal surface-mount transistor in SOT-363 package, rated for 40 V VCEO, 600 mA IC, and 200 mW PD, with DC current gain (hFE) ranging from 35 to 300 depending on bias conditions; used in low-power switching and amplification stages of portable audio, LED drivers, and logic-level interface circuits.

For engineers reviewing the MMDT2222A-7 datasheet, MMDT2222A-7 pinout, MMDT2222A-7 application, or MMDT2222A-7 equivalent, key selection criteria include verified VCE(SAT) ≤ 1.0 V at 500 mA/50 mA drive, fT = 300 MHz at 20 mA, thermal resistance RJA = 625 °C/W on FR-4, and RoHS-compliant lead-free plating per J-STD-020C Level 1 moisture sensitivity.

Technical Context

This dual NPN transistor uses epitaxial planar die construction for consistent gain and low leakage, supporting independent or paralleled operation of both transistors within one SOT-363 footprint. Each device exhibits V(BR)CEO = 40 V, V(BR)EBO = 6.0 V, and ICBO ≤ 10 nA at 60 V, enabling reliable operation in 3.3 V–24 V digital and analog signal paths.

Switching performance is characterized by td = 10 ns, tr = 25 ns, ts = 225 ns, and tf = 60 ns under 30 V VCC, 150 mA IC, and matched base drive - suitable for medium-speed digital logic buffering and PWM-controlled load switching up to ~1 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
IC (continuous)600 mA - Continuous collector current rating at TA = 25°C with derating above 25°C
PD200 mW - Total power dissipation limit on standard FR-4 PCB per Diodes Inc. AP02001 layout
hFE35–300 - DC current gain range across IC = 100 µA to 500 mA and VCE = 10 V
fT300 MHz - Unity-gain frequency at VCE = 20 V, IC = 20 mA, enabling RF amplifier use up to ~100 MHz
VCE(SAT)0.3–1.0 V - Saturation voltage at IC/IB = 150 mA/15 mA and 500 mA/50 mA, critical for low-loss switching
RJA625 °C/W - Junction-to-ambient thermal resistance on specified PCB layout, defining max ambient temperature for full power

Pinout & Package

Package: SOT-363 (SC-70-6), ultra-small surface-mount plastic case with UL 94V-0 flammability rating and moisture sensitivity level 1 per J-STD-020C; weight ≈ 0.006 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter 1)Emitting terminal for first NPN transistorReference node for Q1 emitter; tied to ground or bias network in common-emitter/common-collector configurations
2 (Base 1)Control input for first NPN transistorReceives base current to switch or amplify; requires current-limiting resistor when driven from logic
3 (Collector 1)Output terminal for first NPN transistorConnects to load or next stage; supports up to 40 V and 600 mA with proper heatsinking
4 (Emitter 2)Emitting terminal for second NPN transistorIndependent emitter node for Q2; enables dual-channel operation without shared emitter constraints
5 (Base 2)Control input for second NPN transistorElectrically isolated from Base 1; allows asynchronous or synchronized control of both transistors
6 (Collector 2)Output terminal for second NPN transistorSeparate high-side output path; supports identical voltage/current ratings as Collector 1

Key Features

FeatureDesign Value
Dual NPN topology in single SOT-363Reduces board space by ~40% vs. two discrete SOT-23 transistors while maintaining independent bias control
hFE ≥ 35 at IC = 500 mAEnsures sufficient drive capability for 5 V logic interfacing without external gain staging
VCE(SAT) ≤ 0.3 V at IC/IB = 150 mA/15 mAMinimizes conduction loss in battery-powered load switches and LED current sinks
fT = 300 MHzSupports stable small-signal amplification in IF stages of AM/FM receivers and sensor signal conditioning
RoHS-compliant matte tin platingEnables lead-free reflow soldering per JEDEC J-STD-020C Level 1, eliminating post-process cleaning

Applications

Portable Audio AmplifiersLED Driver Circuits

Use Scenario: Driving 8 Ω speaker loads in Bluetooth earbuds using Class-B push-pull output stage.

IC Role / Device Role / Timing Role: Dual NPN configured as complementary emitter-follower pair for low-distortion, rail-to-rail output swing.

Use Value: VCE(SAT) ≤ 0.3 V ensures >85% efficiency at 100 mA output, extending battery life in compact form factor.

Use Scenario: Constant-current sink for RGB LED backlighting in smart thermostats.

IC Role / Device Role / Timing Role: Each NPN acts as digitally controlled current sink with PWM dimming input on respective base.

Use Value: Matched hFE across channels enables precise color balance; 600 mA rating supports high-brightness LEDs.

Logic-Level TranslationIndustrial Sensor Interface

Use Scenario: Converting 1.8 V GPIO signals to 5 V/12 V levels for relay or solenoid control in IoT gateways.

IC Role / Device Role / Timing Role: First NPN as level shifter, second as buffer/driver; both operate in saturation or cutoff.

Use Value: Low VBE(SAT) (≤1.2 V) guarantees turn-on with sub-2 V logic, eliminating need for external pull-up resistors.

Use Scenario: Amplifying low-amplitude thermistor or RTD bridge outputs in HVAC controllers.

IC Role / Device Role / Timing Role: Configured as common-emitter amplifier with emitter degeneration for linear gain stability.

Use Value: fT = 300 MHz and NF = 4.0 dB at 1 kHz enable clean 20 kHz bandwidth amplification with minimal added noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK-7Single NPN in SOT-23; higher VCEO = 60 V but no dual configurationRequires two devices for dual-channel use; larger board area and routing complexitySelect only if higher voltage rating is mandatory and space is not constrained
MMDT3904-7Same SOT-363 package; lower IC = 200 mA and VCEO = 40 V, hFE = 100–300 at 10 mANot suitable for 500 mA loads; better for low-current signal switchingPrefer for battery-sensitive applications where <200 mA drive suffices and gain consistency is prioritized

Compared with MMDT2222A-7, DMN2004LK-7 trades integration for voltage headroom, while MMDT3904-7 sacrifices current capacity for tighter hFE distribution - making MMDT2222A-7 optimal for space-constrained, medium-current dual-switching designs.

Availability

MMDT2222A-7 is available at Aetrix Electronics and suitable for portable audio amplifiers, LED driver circuits, logic-level translation, and industrial sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for MMDT2222A-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The MMDT2222A belongs to Diodes' small-signal transistor product line, engineered for high-reliability, low-cost switching and amplification in consumer, computing, and industrial equipment where miniaturization and thermal robustness are essential.

FAQ

Is MMDT2222A-7 pin-compatible with the legacy PNP complement MMDT2907A-7?

No, MMDT2222A-7 and MMDT2907A-7 share the same SOT-363 package and pin numbering, but their internal transistor polarities differ: pins 1–3 form one NPN, while pins 4–6 form the second NPN in MMDT2222A-7; MMDT2907A-7 contains two PNP transistors with reversed emitter-collector assignments. Direct substitution without circuit redesign will cause functional failure.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature Tj for MMDT2222A-7 is +150°C, as specified in the Absolute Maximum Ratings table. Operation at this temperature requires strict derating of PD per Figure 1 - at 100°C ambient, maximum dissipation drops to ~80 mW. Thermal design must ensure RJA ≤ 625 °C/W on the actual PCB layout.

Does the "-7" suffix indicate tape-and-reel packaging, and what is the reel quantity?

Yes, the "-7" suffix denotes SOT-363 packaging in 3000-unit tape-and-reel format, per Diodes Incorporated's Ordering Information table. This is the standard shipping configuration for automated SMT assembly and qualifies for full RoHS compliance when ordered without the "-F" suffix (which is redundant, as -7 is already lead-free).

Can MMDT2222A-7 be used in linear amplifier mode with stable bias?

Yes, MMDT2222A-7 supports linear operation with proper emitter degeneration and thermal stabilization. Its hFE variation across IC (Figure 2) and low noise figure (NF = 4.0 dB at 1 kHz) make it suitable for preamplifier stages, though gain flatness above 10 MHz degrades due to fT-limited bandwidth; DC bias must avoid exceeding VCEO = 40 V and PD = 200 mW limits.

MMDT2222A-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
600mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
200mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT2222A-7 FAQ

1.How can I place an order for MMDT2222A-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT2222A-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT2222A-7 reliable?

The price and inventory of MMDT2222A-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT2222A-7 is usually 5 days.

3.What payment methods are accepted for MMDT2222A-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT2222A-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT2222A-7?

MMDT2222A-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT2222A-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT2222A-7?

For technical support, including MMDT2222A-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT2222A-7 requirements.

6.How does Aetrix verify that MMDT2222A-7 is sourced from the original manufacturer or authorized distributors?

All MMDT2222A-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT2222A-7 meets industry standards.

7.What is the process for return or replacement of MMDT2222A-7?

All MMDT2222A-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT2222A-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT2222A-7 part is unused and in its original packaging.

Return procedure for MMDT2222A-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMDT2222A-7 Tags

  • MMDT2222A-7
  • MMDT2222A-7 PDF
  • MMDT2222A-7 Datasheet
  • MMDT2222A-7 Specifications
  • MMDT2222A-7 Images
  • Diodes Incorporated
  • Diodes Incorporated MMDT2222A-7
  • Buy MMDT2222A-7
  • MMDT2222A-7 Price
  • MMDT2222A-7 Distributor
  • MMDT2222A-7 Supplier
  • MMDT2222A-7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER