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Diodes Incorporated MMDT2222A-7-F

Part No.:
MMDT2222A-7-F
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT2222A-7-F.pdf
Description:
TRANS 2NPN 40V 600MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,774

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Product details

Overview

MMDT2222A-7-F from Diodes Incorporated is a dual NPN small-signal transistor in SOT363 package, rated for 40 V VCEO, 600 mA IC, and 200 mW power dissipation. It delivers hFE = 35–300 across 100 µA–500 mA collector current, with fT = 300 MHz and VCE(SAT) ≤ 1.0 V at 500 mA/50 mA drive - used in automotive lighting control, sensor interface amplification, and medium-power switching in space-constrained PCBs.

For engineers reviewing the MMDT2222A-7-F datasheet, MMDT2222A-7-F pinout, MMDT2222A-7-F application, or MMDT2222A-7-F equivalent, key selection criteria include dual-NPN matching tolerance, AEC-Q101 qualification, SOT363 thermal resistance (625 °C/W), and guaranteed BVCEO ≥ 40 V under pulsed conditions.

Technical Context

This dual NPN transistor uses epitaxial planar die construction to ensure consistent gain matching and low leakage (ICBO ≤ 10 nA at 60 V). Its ultra-small SOT363 footprint supports high-density routing while maintaining thermal performance via 1 oz copper pad layout per JEDEC standards.

The device operates across –55 °C to +150 °C and meets AEC-Q101 stress testing for automotive reliability. Switching parameters - tD ≤ 10 ns, tR ≤ 25 ns, tS ≤ 225 ns - are specified at VCC = 30 V, IC = 150 mA, enabling fast digital logic interfacing and PWM-driven load control.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin.
IC (max) 600 mA - Continuous collector current rating; supports driving relays, LEDs, or small solenoids directly.
PD 200 mW - Power dissipation limit on FR-4 PCB with minimum recommended copper; defines thermal headroom in compact layouts.
hFE 35–300 - DC current gain range across 100 µA–500 mA; allows flexible bias design for analog amplification or saturated switching.
fT 300 MHz - Current gain-bandwidth product; supports RF preamplifier stages up to VHF band in low-noise receivers.
ESD HBM ≥ 4,000 V - Human Body Model rating; ensures robustness during manual handling and board assembly without extra protection.

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic case (2.15 mm × 2.10 mm × 1.00 mm), halogen- and antimony-free, matte tin terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter 1) Emitting terminal of first NPN transistor Common reference node for Q1; tied to ground or local emitter resistor in amplifier configurations.
2 (Base 1) Control input for first NPN transistor Receives base drive current to switch or amplify; requires current-limiting resistor when driven from MCU GPIO.
3 (Collector 1) Output terminal of first NPN transistor Connects to load (e.g., LED anode or relay coil); pulled high through pull-up or supply rail in open-collector mode.
4 (Emitter 2) Emitting terminal of second NPN transistor Independent emitter node for Q2; enables dual-channel operation without shared emitter constraints.
5 (Base 2) Control input for second NPN transistor Separate control path for independent switching or differential pair biasing; matches Q1 electrical characteristics.
6 (Collector 2) Output terminal of second NPN transistor Second switched output; supports redundant signaling, push-pull drivers, or mirrored current sources.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control modules and body electronics requiring high-reliability discrete transistors.
Dual matched NPN topology Two electrically isolated transistors in one SOT363 package reduce board area by ~40% vs. two discrete SOT23 devices.
VCE(SAT) ≤ 0.3 V @ 150 mA/15 mA Low saturation voltage minimizes conduction loss in switching applications, improving efficiency in 12 V/24 V load control.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (Br+Cl < 1500 ppm, Sb < 1000 ppm) meets global environmental compliance mandates.

Applications

Automotive LED Headlamp Driver Industrial Sensor Signal Amplifier

Use Scenario: Driving high-brightness white LEDs in adaptive front-lighting systems with PWM dimming.

IC Role / Device Role / Timing Role: Dual-NPN configured as current sink switches controlling LED strings independently.

Use Value: Matched hFE and low VCE(SAT) ensure uniform brightness and minimal thermal rise across dual channels.

Use Scenario: Amplifying low-level analog outputs from temperature or pressure sensors in PLC I/O modules.

IC Role / Device Role / Timing Role: NPN common-emitter amplifier stage with emitter degeneration for stable DC gain.

Use Value: 300 MHz fT and 4.0 dB NF support accurate signal conditioning up to 10 kHz without added noise.

USB-C Port Power Switch Smart Home Relay Interface Board

Use Scenario: Enabling/disabling VBUS and CC line termination in USB-C receptacle circuits.

IC Role / Device Role / Timing Role: Dual NPN used as level-shifted enable switches for 5 V and 3.3 V control paths.

Use Value: Fast tR/tF (≤25 ns/60 ns) ensures clean USB enumeration timing without bus glitches.

Use Scenario: Isolating microcontroller GPIOs from 12 V relay coils in HVAC control panels.

IC Role / Device Role / Timing Role: Saturated switch driving relay coil with flyback diode protection.

Use Value: 600 mA IC rating and AEC-Q101 qualification provide long-term reliability in cyclic industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3022LW-7 Higher VCEO = 50 V, lower hFE min = 20, same SOT363 package Better suited for 48 V industrial bus interfaces where higher breakdown margin is required Select when operating above 40 V or needing tighter thermal derating at elevated ambient temperatures
BC847BDW1T1G Lower VCEO = 45 V, hFE = 200–450, but not AEC-Q101 qualified Cost-optimized for consumer-grade portable electronics without automotive qualification needs Choose for non-automotive designs where qualification overhead is unnecessary and higher gain is prioritized

Compared with DMT3022LW-7 and BC847BDW1T1G, MMDT2222A-7-F uniquely balances AEC-Q101 compliance, 40 V robustness, and dual-transistor integration - making it optimal for space-limited automotive subsystems requiring production-grade reliability.

Availability

MMDT2222A-7-F is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor signal conditioning, and smart home relay interface boards requiring stable component supply across multi-year production cycles.

Supply support for MMDT2222A-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

MMDT2222A belongs to Diodes' AEC-Q101-qualified small-signal transistor family, engineered specifically for automotive and industrial applications demanding high reliability, tight parameter matching, and ultra-compact packaging.

FAQ

Is MMDT2222A-7-F pin-compatible with single-transistor SOT23 packages?

No - MMDT2222A-7-F uses a 6-pin SOT363 package with dual NPN configuration, whereas standard SOT23 transistors have only 3 pins. Direct replacement requires PCB layout revision to accommodate the different pin count and internal dual topology.

What is the maximum junction temperature during continuous operation?

The absolute maximum junction temperature is +150 °C. At 25 °C ambient and 200 mW dissipation, junction temperature rises by 125 °C (625 °C/W × 0.2 W), reaching 150 °C - confirming operation at full power is only viable with zero ambient rise or active cooling.

Does MMDT2222A-7-F support linear (analog) amplification modes?

Yes - its hFE specification covers 100 µA to 500 mA, and typical fT = 300 MHz supports stable small-signal amplification up to ~10 MHz. Designers must ensure proper emitter degeneration and thermal stabilization for bias point stability.

How does the "K1P" marking relate to the MMDT2222A-7-F part number?

"K1P" is the top-side product type marking code laser-etched on the SOT363 package. It uniquely identifies the MMDT2222A die variant and is used for traceability and counterfeit detection - matching the -7-F tape-and-reel ordering code per Diodes' packaging documentation.

MMDT2222A-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
600mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
200mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT2222A-7-F FAQ

1.How can I place an order for MMDT2222A-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT2222A-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT2222A-7-F reliable?

The price and inventory of MMDT2222A-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT2222A-7-F is usually 5 days.

3.What payment methods are accepted for MMDT2222A-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT2222A-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT2222A-7-F?

MMDT2222A-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT2222A-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT2222A-7-F?

For technical support, including MMDT2222A-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT2222A-7-F requirements.

6.How does Aetrix verify that MMDT2222A-7-F is sourced from the original manufacturer or authorized distributors?

All MMDT2222A-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT2222A-7-F meets industry standards.

7.What is the process for return or replacement of MMDT2222A-7-F?

All MMDT2222A-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMDT2222A-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT2222A-7-F part is unused and in its original packaging.

Return procedure for MMDT2222A-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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