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Diodes Incorporated MMDT2222V-7

Part No.:
MMDT2222V-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixMMDT2222V-7.pdf
Description:
TRANS 2NPN 40V 600MA SOT-563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,190

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Product details

Overview

MMDT2222V-7 from Diodes Incorporated is a dual NPN small-signal transistor in SOT563 package, rated for 40 V VCEO, 600 mA IC, and 150 mW power dissipation, with hFE ranging from 35 to 300 across 100 µA–500 mA collector currents; used in medium-power amplification and switching circuits in automotive infotainment power stages and industrial sensor interface modules.

For engineers reviewing the MMDT2222V-7 datasheet, MMDT2222V-7 pinout, MMDT2222V-7 application, or MMDT2222V-7 equivalent, key selection criteria include VCEO ≥ 40 V, fT = 300 MHz, AEC-Q101 qualification, SOT563 footprint compatibility, and complementary pairing with MMDT2907V for push-pull configurations.

Technical Context

This dual NPN transistor uses epitaxial planar die construction for stable gain and low leakage, supporting both linear amplification (hFE = 40–100 at IC = 1–150 mA) and saturated switching (VCE(sat) ≤ 0.3 V at IC = 150 mA / IB = 15 mA). It operates across –55°C to +150°C and meets AEC-Q101 stress testing for automotive reliability.

Its ultra-small SOT563 package integrates two independent NPN transistors sharing no internal connection, with isolated terminals enabling discrete biasing per device; thermal resistance RθJA = 833°C/W on minimal FR4 copper layout supports moderate-duty cycling without forced cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions
IC600 mA - Continuous DC collector current handling capacity per transistor element
PD150 mW - Max steady-state power dissipation on standard FR4 PCB with 1 oz copper
fT300 MHz - Transition frequency defining usable bandwidth for small-signal amplification
hFE35–300 - DC current gain range across 100 µA–500 mA IC, enabling wide dynamic bias design
VCE(sat)≤ 0.3 V @ IC=150 mA/IB=15 mA - Low saturation voltage ensures < 45 mW conduction loss in switching mode
ESD HBM4000 V - Robustness against human-body electrostatic discharge during board assembly

Pinout & Package

Package: SOT563 - ultra-small surface-mount plastic package (2.2 mm × 1.7 mm × 0.5 mm), molded with halogen/antimony-free "Green" compound, UL 94V-0 rated, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1Emitter of Transistor 1Low-impedance current sink node; tied to ground or emitter resistor in common-emitter configuration
2Base of Transistor 1Control input requiring ~0.7 V forward bias and µA-level drive current
3Collector of Transistor 1High-side output node; connects to load or pull-up resistor in switching or amplification
4Emitter of Transistor 2Independent emitter terminal; enables separate biasing from Transistor 1
5Base of Transistor 2Second control input; electrically isolated from Pin 2 for dual-channel operation
6Collector of Transistor 2Second high-side output; supports independent load switching or differential pair implementation

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control modules and body electronics
Dual independent NPN topologyEnables space-efficient duplication of gain stages or complementary driver pairs without inter-die coupling
VCEO = 40 V & VCBO = 75 VSupports 24 V automotive rail operation with 2× safety margin against transients
fT = 300 MHzPermits RF pre-amplifier use up to ~100 MHz with predictable gain roll-off
SOT563 footprintReduces PCB area by >60% vs. SO-8 while maintaining solderability and thermal performance

Applications

Automotive Door Module DriverIndustrial Sensor Signal Conditioning

Use Scenario: Driving resistive loads such as window motor relays and LED status indicators in door control units.

IC Role / Device Role / Timing Role: Dual NPN switch providing independent ON/OFF control of two 24 V loads with fast turn-on (tr ≤ 25 ns) and low saturation loss.

Use Value: Enables compact dual-load control using single SOT563 footprint, reducing BOM count and PCB real estate versus discrete SOT23 solutions.

Use Scenario: Amplifying low-level analog outputs from temperature or pressure sensors before ADC sampling.

IC Role / Device Role / Timing Role: Medium-gain (hFE = 75 @ IC = 10 mA), low-noise (NF ≤ 4.0 dB) NPN amplifier stage operating at 100 µA–1 mA bias.

Use Value: Delivers stable gain over –40°C to +125°C ambient without external compensation, meeting industrial sensor accuracy requirements.

USB-C Power Delivery InterfaceSmart Lighting Dimming Circuit

Use Scenario: Level-shifting and enable control for USB-C port power path management ICs.

IC Role / Device Role / Timing Role: Logic-level translator and gate driver for 5 V/3.3 V interface signals with ESD-hardened inputs (HBM = 4 kV).

Use Value: Eliminates need for dedicated level translators; dual configuration allows simultaneous control of VBUS and CC line switches.

Use Scenario: PWM-controlled current regulation for multi-zone LED arrays in architectural lighting systems.

IC Role / Device Role / Timing Role: High-speed (tf ≤ 60 ns) switching element modulating constant-current LED drivers at 1–10 kHz.

Use Value: Supports flicker-free dimming with minimal thermal rise due to low VCE(sat) and 150 mW rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2026LSD-13Single N-channel MOSFET (20 V, 3.2 A), not bipolar; gate-driven, no base current requiredHigher current capability but lacks linear amplification mode and lower VGS(th) toleranceSelect when switching-only operation and >1 A load current are required; not suitable for analog gain stages
MMDT3904V-7Same SOT563 package, dual NPN, but lower VCEO = 40 V (same), hFE = 100–300 (narrower min), fT = 300 MHz (identical)Optimized for higher-gain, lower-noise small-signal use; less suited for 500 mA switchingPrefer for RF amplification or low-current bias networks; retain MMDT2222V-7 for mixed-signal or higher-IC switching

Compared with DMN2026LSD-13 and MMDT3904V-7, MMDT2222V-7 uniquely balances medium-power switching (600 mA), linear amplification (hFE down to 35), and AEC-Q101 qualification-making it optimal for automotive and industrial dual-role circuits where bipolar behavior and reliability are essential.

Availability

MMDT2222V-7 is available at Aetrix Electronics and suitable for automotive door modules, industrial sensor interfaces, USB-C power delivery subsystems, and smart lighting dimming circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for MMDT2222V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MMDT2222V-7 belongs to Diodes' AEC-Q101-qualified small-signal transistor product line, engineered specifically for space-constrained, high-reliability automotive and industrial control applications demanding dual-transistor integration in ultra-miniature packages.

FAQ

Is MMDT2222V-7 pin-compatible with MMDT3904V-7?

Yes-both use identical SOT563 pinout (Emitter1/Base1/Collector1/Emitter2/Base2/Collector2), allowing direct PCB footprint reuse. However, MMDT2222V-7 offers wider hFE range (35–300 vs. 100–300) and higher IC capability (600 mA vs. 200 mA), making it more suitable for higher-current switching tasks.

What is the maximum junction temperature during continuous operation?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C ambient. At full 150 mW dissipation on a standard FR4 board, junction temperature rise is approximately 125°C above ambient, so derating is required above +25°C ambient to stay within limit.

Does MMDT2222V-7 support linear amplification at low collector currents?

Yes-hFE is specified at 35 minimum at IC = 100 µA and VCE = 10 V, confirming usable gain in micro-power analog stages. Its NF ≤ 4.0 dB at 100 µA also supports low-noise pre-amplifier designs in sensor front-ends.

Can MMDT2222V-7 replace a single SOT23-3 NPN transistor in existing designs?

No-it contains two independent NPN transistors in one SOT563 package with six terminals, not three. Direct replacement requires circuit redesign to utilize both devices or leave unused pins unconnected; it cannot serve as a drop-in substitute for single-transistor footprints without layout changes.

MMDT2222V-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
600mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
150mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

MMDT2222V-7 FAQ

1.How can I place an order for MMDT2222V-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT2222V-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT2222V-7 reliable?

The price and inventory of MMDT2222V-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT2222V-7 is usually 5 days.

3.What payment methods are accepted for MMDT2222V-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT2222V-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT2222V-7?

MMDT2222V-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT2222V-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT2222V-7?

For technical support, including MMDT2222V-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT2222V-7 requirements.

6.How does Aetrix verify that MMDT2222V-7 is sourced from the original manufacturer or authorized distributors?

All MMDT2222V-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT2222V-7 meets industry standards.

7.What is the process for return or replacement of MMDT2222V-7?

All MMDT2222V-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT2222V-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT2222V-7 part is unused and in its original packaging.

Return procedure for MMDT2222V-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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