Diodes Incorporated MMDT2907A-7

Overview

MMDT2907A-7 from Diodes Incorporated is a dual PNP small-signal surface-mount transistor in SOT-363 package, rated for -60 V V_CEO, -600 mA I_C, 200 mW P_D, and 200 MHz f_T, used in low-power switching and amplification circuits such as level-shifting stages in portable power management ICs.

For engineers reviewing the MMDT2907A-7 datasheet, MMDT2907A-7 pinout, MMDT2907A-7 application, or MMDT2907A-7 equivalent, key selection criteria include verified PNP dual configuration, guaranteed h_FE ≥ 75 at I_C = -100 µA, V_CE(SAT) ≤ -0.4 V at I_C = -150 mA/I_B = -15 mA, and SOT-363 thermal resistance of 625 °C/W on FR-4.

Technical Context

This device integrates two identical epitaxial planar PNP transistors in a single ultra-small SOT-363 package, sharing no internal connection between units. Each transistor supports independent biasing with fully characterized OFF-state leakage (I_CBO ≤ -10 nA), ON-state gain (h_FE = 75–300 across I_C = -100 µA to -500 mA), and switching performance (t_on = 45 ns, t_off = 100 ns).

Its design targets space-constrained DC-DC converter feedback paths and discrete logic inverters where matched dual-PNP topology enables complementary signal inversion without cross-coupling. Thermal derating follows Fig. 1: P_D drops linearly from 200 mW at 25 °C to 0 mW at 150 °C ambient.

Key Specifications

Pinout & Package

Package: SOT-363 - Ultra-small surface-mount plastic package (2.20 × 1.35 × 0.95 mm), UL 94V-0 rated, moisture sensitivity Level 1, weight 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP small-signal transistor applications.

Compared with MMDT2907A-7, DMT301P trades bandwidth for voltage headroom, while NSVD2907A offers identical performance with enhanced environmental compliance-neither alters pinout or thermal interface, enabling direct layout reuse.

Availability

MMDT2907A-7 is available at Aetrix Electronics and suitable for LED driver stages, DC-DC feedback paths, and logic level shifter circuits requiring stable component supply across automotive, industrial, and portable electronics programs.

Supply support for MMDT2907A-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

MMDT2907A-7 belongs to Diodes' small-signal transistor product line, engineered for high-density, low-power analog and switching functions in space-constrained consumer and industrial systems.

FAQ

What is the maximum operating junction temperature for MMDT2907A-7?

The absolute maximum junction temperature is +150 °C, consistent with its specified storage and operating temperature range of -55 °C to +150 °C. This rating is validated under the defined FR-4 PCB mounting condition (1 inch × 0.85 inch × 0.062 inch) per Note 1 in the datasheet, and must be respected even when ambient temperature remains below 150 °C due to self-heating.

Is MMDT2907A-7 pin-compatible with the single-transistor MMBT2907A?

No-MMDT2907A-7 uses SOT-363 (6-pin) packaging with two independent PNP transistors, whereas MMBT2907A uses SOT-23 (3-pin) for a single PNP device. Pin assignments, terminal count, and internal topology differ fundamentally; no mechanical or electrical compatibility exists between the two packages.

Does MMDT2907A-7 support avalanche-rated operation?

No-MMDT2907A-7 is not rated for avalanche energy handling. Its absolute maximum ratings specify only steady-state voltage limits (e.g., V_CEO = -60 V), and the datasheet provides no SOA curves, avalanche test conditions, or ruggedness guarantees. It must be operated within linear or switched safe operating areas defined by V_CE, I_C, and P_D derating.

Can both transistors in MMDT2907A-7 be biased simultaneously without interaction?

Yes-the two PNP transistors are fully isolated die elements in a single mold compound; there is no internal electrical connection between them. Electrical crosstalk is limited to substrate coupling, which is negligible at frequencies below 100 MHz and DC bias conditions, as confirmed by independent parameter testing in the datasheet's "Electrical Characteristics" table.