Diodes Incorporated MMDT3906-7

Overview

MMDT3906-7 from Diodes Incorporated is a dual PNP small-signal surface-mount transistor in SOT-363 package, rated for V_CEO = −40 V, I_C = −200 mA, and P_D = 200 mW, with h_FE = 60–300 (IC = −100 µA to −100 mA) and f_T = 250 MHz - used in low-power switching and amplification stages of portable audio bias networks and LED driver current sinks.

For engineers reviewing the MMDT3906-7 datasheet, MMDT3906-7 pinout, MMDT3906-7 application, or MMDT3906-7 equivalent, key selection criteria include verified dual-PNP matching, SOT-363 thermal resistance (R_JA = 625 °C/W), V_BE(SAT) ≤ −0.95 V at I_C = −50 mA, and guaranteed −55 °C to +150 °C operation.

Technical Context

This dual PNP transistor integrates two electrically isolated epitaxial planar die in a single ultra-small SOT-363 package, enabling compact complementary-stage biasing without cross-coupling. Each transistor supports independent DC biasing with matched h_FE spread and identical breakdown ratings (V_CEO, V_CB0, V_EB0).

It operates in active, saturation, and cutoff regions with defined small-signal parameters: h_fe = 100–400, C_obo = 4.5 pF, C_ibo = 10 pF, and NF = 4.0 dB at I_C = −100 µA - suitable for high-frequency analog front-ends where layout density and thermal budget constrain discrete solutions.

Key Specifications

Pinout & Package

SOT-363 (SC-88) 6-pin ultra-small surface-mount package with gull-wing leads; UL 94V-0 mold compound; moisture sensitivity level 1; weight ≈ 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP small-signal transistor applications.

Compared with DMT3906LW-7 and NSVT3906MT1G, MMDT3906-7 offers the broadest h_FE range (60–300), lowest R_JA, and full JEDEC-compliant SOT-363 mechanical definition - making it optimal for cost-sensitive, thermally demanding dual-bias applications.

Availability

MMDT3906-7 is available at Aetrix Electronics and suitable for portable audio bias networks, LED driver current sinks, low-voltage logic level shifting, and temperature-stable reference current sources requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for MMDT3906-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The MMDT3906-7 belongs to Diodes' small-signal transistor product line, engineered specifically for space-constrained, low-power analog and switching functions in consumer, industrial, and computing end-equipment.

FAQ

Is MMDT3906-7 RoHS compliant and halogen-free?

Yes. MMDT3906-7 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The SOT-363 package uses UL 94V-0 mold compound with no brominated flame retardants, and all terminals are lead-free matte tin plated per J-STD-020A Level 1 moisture sensitivity.

What is the maximum safe operating current for continuous DC switching?

The absolute maximum continuous collector current is −200 mA per transistor at T_A = 25 °C. Derating is required above 25 °C per the curve in Figure 1: at 70 °C ambient, max I_C drops to −120 mA to maintain junction temperature ≤ +150 °C with R_JA = 625 °C/W.

Can MMDT3906-7 be used in linear amplifier configurations?

Yes - its h_FE stability, f_T = 250 MHz, and low noise figure (NF = 4.0 dB) support Class-A and Class-AB small-signal amplification. However, linear use requires strict thermal management: P_D must remain ≤ 200 mW, limiting output swing in 3.3 V systems to <100 mW delivered power.

Does the dual configuration support cross-coupled or push-pull topologies?

Yes - Pins 1–3 and 4–6 form fully isolated transistors with no internal connection. This enables true push-pull emitter-follower outputs, complementary current mirrors, or independent switched loads. Layout must maintain ≥0.2 mm creepage between collectors to avoid crosstalk at V_CB = −40 V.