Diodes Incorporated MMDT4124-7
- Part No.:
- MMDT4124-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
MMDT4124-7.pdf
- Description:
- TRANS 2NPN 25V 200MA SOT-363
- Quantity:
- Payment:

- Shipping:

Inventory:3,693
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Product details
Overview
MMDT4124 from Diodes Incorporated is a dual NPN small-signal transistor in SOT-363 package, designed for medium-power amplification and switching in compact PCB layouts. It features VCEO = 25 V, IC = 200 mA, PD = 200 mW, hFE = 120–360 (at IC = 2 mA), and fT = 300 MHz - enabling use in low-voltage audio preamps and digital logic interface stages.
For engineers reviewing the MMDT4124 datasheet, MMDT4124 pinout, MMDT4124 application, or MMDT4124 equivalent, key selection criteria include its dual-NPN configuration, SOT-363 thermal resistance (RJA = 625 K/W), VBE(SAT) = 0.95 V at IC = 50 mA, complementary PNP pairing with MMDT4126, and lead-free plating option (-F suffix).
Technical Context
The MMDT4124 integrates two independent epitaxial planar NPN transistors in a single SOT-363 package, sharing no internal connection between devices. Each transistor supports DC current gain up to 360 at low collector current (2 mA) and maintains usable hFE ≥ 60 at 50 mA, with VCE(SAT) ≤ 0.30 V under forced β = 10 drive conditions.
Its 300 MHz fT and low Cibo = 8.0 pF / Cobo = 4.0 pF support RF-coupled amplifier stages up to VHF, while NF = 5.0 dB at 1 kHz confirms suitability for low-noise signal conditioning in sensor front-ends and portable audio paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 25 V - maximum safe collector-emitter voltage before breakdown in common-emitter switch or amplifier mode |
| IC | 200 mA - continuous collector current limit per transistor, defining medium-power switching capability |
| PD | 200 mW - total package power dissipation at TA = 25°C, constraining thermal design on FR-4 PCBs |
| hFE | 120–360 - DC current gain range at IC = 2 mA/VCE = 1 V, critical for bias stability in discrete gain stages |
| fT | 300 MHz - transition frequency indicating usable bandwidth for small-signal amplification up to ~100 MHz |
| RJA | 625 K/W - junction-to-ambient thermal resistance, requiring careful copper pour layout for >100 mW operation |
| NF | 5.0 dB - noise figure at 1 kHz/100 µA, confirming suitability for low-level analog signal amplification |
Pinout & Package
Package: SOT-363 (SC-70-6), ultra-small surface-mount plastic case, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.006 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter 1) | Emitting terminal of first NPN transistor | Common reference node for Q1; must be tied to lowest potential in Q1 circuit |
| 2 (Base 1) | Control input for first NPN transistor | Drives Q1 conduction; requires current-limiting resistor when driven from logic |
| 3 (Collector 1) | Output terminal of first NPN transistor | Connects to load or next stage; supports up to 25 V and 200 mA |
| 4 (Emitter 2) | Emitting terminal of second NPN transistor | Independent emitter node for Q2; not internally connected to Pin 1 |
| 5 (Base 2) | Control input for second NPN transistor | Electrically isolated from Pin 2; enables dual independent switching/amplification |
| 6 (Collector 2) | Output terminal of second NPN transistor | Supports identical ratings as Pin 3; allows space-efficient dual-channel implementation |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent NPN transistors | Enables two separate amplification or switching functions in one footprint, reducing board area by ~40% vs. discrete SOT-23 devices |
| VBE(SAT) = 0.95 V @ IC = 50 mA | Minimizes base drive power loss and improves efficiency in saturated-switch applications like LED drivers or logic-level translators |
| Complementary PNP pairing (MMDT4126) | Allows direct substitution in push-pull or differential pair topologies without redesigning bias networks or layout |
| Lead-free plating option (-F suffix) | Meets RoHS compliance requirements without derating; matte tin finish ensures reliable solderability per MIL-STD-202 |
| Low Cibo/Cobo (8.0/4.0 pF) | Reduces Miller effect and high-frequency instability, supporting stable gain in broadband amplifier designs up to 100 MHz |
Applications
| Audio Pre-amplifier Stage | Logic-Level Translation |
|---|---|
Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in battery-powered voice recorders. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology for voltage gain and impedance matching. Use Value: hFE ≥ 120 at 2 mA and NF = 5.0 dB ensure sufficient SNR and minimal added noise in sub-100 µV input stages. | Use Scenario: Converting 1.8 V CMOS logic outputs to 3.3 V or 5 V levels for legacy peripherals. IC Role / Device Role / Timing Role: NPN transistor used as active-low level shifter with pull-up resistors on collector nodes. Use Value: VCE(SAT) ≤ 0.30 V and fast fT = 300 MHz support clean edge transitions up to 10 MHz without propagation delay penalty. |
| LED Driver Circuit | Digital Signal Switching |
Use Scenario: Driving multiple indicator LEDs in space-constrained IoT node PCBs with shared MCU GPIOs. IC Role / Device Role / Timing Role: Each NPN transistor acts as a grounded-emitter switch controlling individual LED anode current paths. Use Value: IC = 200 mA rating and VBE(SAT) = 0.95 V allow direct drive of up to 150 mA LEDs with <100 mW per channel dissipation. | Use Scenario: Enabling/disabling analog sensor channels or power rails via microcontroller GPIO control. IC Role / Device Role / Timing Role: NPN transistor used as high-side or low-side load switch depending on configuration. Use Value: Dual configuration supports simultaneous enable of two independent subsystems (e.g., ADC + RF module) from one compact footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2013LFG-7 | Single N-channel MOSFET (not bipolar); RDS(on) = 1.3 Ω @ VGS = 4.5 V; no hFE or VBE parameters | Requires gate drive voltage >2.5 V; unsuitable for linear amplification or low-current analog biasing | Select only for pure switching where low on-resistance and zero gate current outweigh need for analog linearity |
| MMDT3904-7 | Same SOT-363 package; lower VCEO = 40 V but reduced fT = 300 MHz (same spec), hFE = 100–300, higher VBE(SAT) = 0.95 V @ IC = 10 mA | Compatible in most switching roles; marginal for high-gain analog stages due to lower hFE floor | Prefer for cost-sensitive digital switching; avoid where hFE > 120 at 50 mA is required |
Compared with MMDT3904-7, MMDT4124 offers higher minimum hFE (120 vs. 100) and tighter VBE(SAT) consistency across current range - critical for precision biasing. DMN2013LFG-7 replaces bipolar behavior entirely with MOSFET characteristics, demanding redesign of drive circuitry and eliminating analog gain capability.
Availability
MMDT4124 is available at Aetrix Electronics and suitable for audio pre-amplifiers, logic-level translators, LED driver circuits, and digital signal switching applications requiring stable component supply and consistent parametric performance across production batches.
Supply support for MMDT4124 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The MMDT4124 belongs to Diodes' small-signal transistor product line, engineered specifically for space-constrained, medium-power analog and digital interface applications in consumer, computing, and industrial electronics.
FAQ
What is the maximum operating temperature for MMDT4124?
The MMDT4124 supports junction and storage temperatures from –55°C to +150°C. Its thermal resistance RJA = 625 K/W means ambient temperature must stay below +85°C when dissipating 100 mW on standard FR-4 PCBs with recommended pad layout AP02001 to avoid exceeding TJ(max) = 150°C.
Is MMDT4124 pin-compatible with MMDT4126?
No - MMDT4124 (dual NPN) and MMDT4126 (dual PNP) share identical SOT-363 pinout and mechanical dimensions, but polarity reversal means direct substitution would invert logic states or cause circuit failure. They are complementary, not interchangeable; both use Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector per device.
Does MMDT4124 support lead-free reflow soldering?
Yes - the standard MMDT4124-7 uses matte tin lead-free plating compliant with J-STD-020A Level 1 moisture sensitivity. It withstands peak reflow temperatures up to 260°C per JEDEC J-STD-020, and the "-F" suffix variant (e.g., MMDT4124-7-F) explicitly denotes lead-free terminal finish with full RoHS documentation.
Can MMDT4124 be used in RF amplifier stages?
Yes - with fT = 300 MHz, Cibo = 8.0 pF, and NF = 5.0 dB at 1 kHz, the MMDT4124 supports small-signal RF amplification up to ~100 MHz in common-emitter configurations. Stability requires proper neutralization and emitter degeneration; it is not rated for power RF output but well-suited for VHF receiver front-ends and IF gain blocks.
MMDT4124-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 200mA
- Voltage - Collector Emitter Breakdown (Max):
- 25V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 1V
- Power - Max:
- 200mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
MMDT4124-7 FAQ
1.How can I place an order for MMDT4124-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMDT4124-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMDT4124-7 reliable?
The price and inventory of MMDT4124-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT4124-7 is usually 5 days.
3.What payment methods are accepted for MMDT4124-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT4124-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMDT4124-7?
MMDT4124-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMDT4124-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMDT4124-7?
For technical support, including MMDT4124-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT4124-7 requirements.
6.How does Aetrix verify that MMDT4124-7 is sourced from the original manufacturer or authorized distributors?
All MMDT4124-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT4124-7 meets industry standards.
7.What is the process for return or replacement of MMDT4124-7?
All MMDT4124-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT4124-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMDT4124-7 part is unused and in its original packaging.
Return procedure for MMDT4124-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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