Diodes Incorporated MMDT4126-7-F
- Part No.:
- MMDT4126-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
MMDT4126-7-F.pdf
- Description:
- TRANS 2PNP 25V 200MA SOT-363
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
MMDT4126-7-F from Diodes Incorporated is a dual PNP small-signal surface-mount transistor in SOT-363 package, rated for -25 V VCEO, -200 mA IC, and 200 mW PD, with hFE = 120–360 at IC = -2 mA and fT = 250 MHz - used in medium-power switching and amplification stages of portable audio bias networks and LED driver current sinks.
For engineers reviewing the MMDT4126-7-F datasheet, MMDT4126-7-F pinout, MMDT4126-7-F application, or MMDT4126-7-F equivalent, key selection criteria include verified dual-PNP matching, low VCE(SAT) (-0.40 V @ -50 mA), thermal resistance (RJA = 625 K/W), lead-free compliance, and SOT-363 footprint compatibility with space-constrained PCB layouts.
Technical Context
This device integrates two matched PNP epitaxial planar transistors on a single die, sharing common emitter connections per channel and enabling complementary operation with NPN counterparts like MMDT4124. Its construction supports stable DC gain across -55°C to +150°C ambient range.
Designed for low-voltage, medium-current analog and digital switching, it delivers consistent hFE performance under VCE = -1.0 V bias and exhibits 4.5 pF Cobo and 10 pF Cibo at specified test conditions - critical for high-frequency stability in oscillator and RF detector front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -25 V - maximum safe collector-emitter voltage before breakdown in common-emitter configuration |
| IC (max) | -200 mA - continuous collector current limit defining switching load capacity |
| PD | 200 mW - total power dissipation limit on FR-4 PCB with specified pad layout |
| hFE | 120–360 - DC current gain range at IC = -2 mA, enabling predictable base drive sizing |
| fT | 250 MHz - transition frequency confirming usable bandwidth up to VHF band |
| RJA | 625 K/W - junction-to-ambient thermal resistance under JEDEC-standard board conditions |
| NF | 4.0 dB - noise figure at 1 kHz, relevant for low-noise preamplifier stages |
Pinout & Package
Package: SOT-363 - ultra-small surface-mount plastic case (UL 94V-0), 0.006 g weight, moisture sensitivity Level 1, lead-free matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Common emitter connection point for first PNP element; tied to ground or reference rail |
| 2 | Base of Transistor 1 | Control input for first transistor; requires current-limited drive to avoid saturation overshoot |
| 3 | Collector of Transistor 1 | Output node for first transistor; sinks current when active, compatible with 3.3 V logic loads |
| 4 | Collector of Transistor 2 | Output node for second transistor; electrically isolated from Pin 3 but thermally coupled on shared die |
| 5 | Base of Transistor 2 | Independent control input for second transistor; enables dual-channel synchronous switching |
| 6 | Emitter of Transistor 2 | Common emitter connection for second PNP; may be tied separately or paralleled with Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched PNP topology | Enables compact push-pull or differential pair implementation without discrete pairing tolerance drift |
| VCE(SAT) = -0.40 V @ -50 mA | Minimizes conduction loss in battery-powered switch-mode regulators and LED current sinks |
| hFE min = 120 @ -2 mA | Ensures reliable turn-on margin with standard GPIO base drive in microcontroller interfaces |
| fT = 250 MHz | Supports stable operation in 10–50 MHz oscillator feedback loops and RF detector circuits |
| Lead-free & RoHS-compliant | Meets IPC-J-STD-020A Level 1 moisture sensitivity and global environmental compliance requirements |
Applications
| Portable Audio Bias Networks | LED Driver Current Sinks |
|---|---|
Use Scenario: Biasing Class-AB output stages in handheld speaker amplifiers with 3.3 V supply rails. IC Role / Device Role / Timing Role: Dual PNP provides matched emitter-follower current sources for quiescent current stabilization. Use Value: Tight hFE matching minimizes crossover distortion; low VCE(SAT) preserves headroom in low-voltage designs. | Use Scenario: Constant-current sinking for RGB LED strings in smart lighting modules. IC Role / Device Role / Timing Role: Each PNP acts as a linear current sink controlled by PWM-modulated base voltage. Use Value: 200 mA rating supports multi-LED chains; thermal resistance allows operation at 60°C ambient without derating. |
| Low-Voltage Logic Level Shifters | DC-DC Converter Feedback Sensing |
Use Scenario: Bidirectional level translation between 1.8 V MCU I/O and 3.3 V peripheral buses. IC Role / Device Role / Timing Role: Dual PNP configured as open-collector translators with pull-up resistors. Use Value: Fast fT ensures sub-100 ns propagation; matched gain maintains symmetry across both directions. | Use Scenario: Precision current sensing in buck converter error amplifier feedback paths. IC Role / Device Role / Timing Role: PNP transistor buffers reference voltage into high-impedance op-amp inputs. Use Value: Low NF (4.0 dB) reduces measurement uncertainty; Cibo = 10 pF avoids phase shift in compensation networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3016LSDQ-7 | Higher VCEO (-30 V), lower hFE (min 85), SOT-563 package (smaller footprint) | Better suited for 5 V rail systems requiring higher breakdown margin | Select when board space is constrained and VCEO > 25 V is required |
| BC846BPDW1T3G | Same SOT-363, but NPN/PNP complementary pair; hFE tighter (200–450), higher fT (300 MHz) | Enables true complementary switching without external NPN pairing | Choose when designing push-pull drivers needing matched NPN+PNP characteristics |
Compared with MMDT4126-7-F, DMT3016LSDQ-7 trades gain for voltage headroom and size reduction, while BC846BPDW1T3G offers complementary topology at higher frequency - making the latter ideal for symmetrical signal paths and the former for compact 3.3 V systems demanding robustness.
Availability
MMDT4126-7-F is available at Aetrix Electronics and suitable for portable audio bias networks, LED driver current sinks, low-voltage logic level shifters, and DC-DC converter feedback sensing requiring stable component supply across production volumes.
Supply support for MMDT4126-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for consumer, industrial, and computing markets.
The MMDT4126-7-F belongs to Diodes' small-signal transistor product line, engineered for space-efficient, thermally robust switching and amplification in battery-powered and thermally sensitive applications.
FAQ
What is the marking code for MMDT4126-7-F?
The top-side marking is "K2B", followed by a two-character date code (e.g., "YM" for September 2002). This matches Diodes Inc.'s standardized SOT-363 marking convention documented in DS30160 Rev. 6, Page 2. The "K2B" identifier is unique to the MMDT4126 device family and confirms dual-PNP functionality.
Can MMDT4126-7-F replace a single discrete PNP transistor?
No - MMDT4126-7-F contains two independent PNP transistors in one SOT-363 package and cannot substitute for a single-transistor device without circuit redesign. Its value lies in dual-channel integration: both transistors share thermal coupling but have separate base/collector/emitter terminals, enabling matched-pair functions not achievable with singles.
Is thermal derating required above 25°C ambient?
Yes - the 200 mW power rating applies only at TA = 25°C. Derating follows the linear curve in Figure 1 of DS30160: power must be reduced by 0.32 mW/°C above 25°C, reaching zero at ~175°C. At 60°C ambient, max allowable PD is ~88 mW, confirmed by RJA = 625 K/W and TJ(max) = 150°C.
Does MMDT4126-7-F support automotive temperature range?
No - its specified operating temperature range is -55°C to +150°C, but Diodes Inc. does not qualify this part for AEC-Q101 automotive stress testing. It is intended for industrial and commercial applications. For automotive use, consider Diodes' AEC-Q101-qualified dual transistors such as DMMT3906W-7-F, which shares SOT-363 packaging but includes full qualification documentation.
MMDT4126-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 200mA
- Voltage - Collector Emitter Breakdown (Max):
- 25V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 1V
- Power - Max:
- 200mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
MMDT4126-7-F FAQ
1.How can I place an order for MMDT4126-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMDT4126-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMDT4126-7-F reliable?
The price and inventory of MMDT4126-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT4126-7-F is usually 5 days.
3.What payment methods are accepted for MMDT4126-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT4126-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMDT4126-7-F?
MMDT4126-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMDT4126-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMDT4126-7-F?
For technical support, including MMDT4126-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT4126-7-F requirements.
6.How does Aetrix verify that MMDT4126-7-F is sourced from the original manufacturer or authorized distributors?
All MMDT4126-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT4126-7-F meets industry standards.
7.What is the process for return or replacement of MMDT4126-7-F?
All MMDT4126-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMDT4126-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMDT4126-7-F part is unused and in its original packaging.
Return procedure for MMDT4126-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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