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Diodes Incorporated MMDT4401-7-F
- Part No.:
- MMDT4401-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
MMDT4401-7-F.pdf
- Description:
- TRANS 2NPN 40V 600MA SOT-363
- Quantity:
- Payment:
- Shipping:
Inventory:10,441
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Product details
Overview
MMDT4401-7-F from Diodes Incorporated is a dual NPN small-signal transistor in SOT363 package, rated for 40V VCEO, 600mA IC, and 200mW power dissipation. It delivers hFE = 40–300 at IC = 10mA–500mA and fT = 250MHz, supporting low-power amplification and switching in space-constrained consumer and industrial control circuits.
For engineers reviewing the MMDT4401-7-F datasheet, MMDT4401-7-F pinout, MMDT4401-7-F application, or MMDT4401-7-F equivalent, key selection criteria include its dual-NPN configuration, SOT363 thermal performance (RθJA = 625°C/W), VCE(sat) ≤ 0.75V at 500mA/50mA drive, and automotive-grade variant availability (MMDT4401Q).
Technical Context
This dual NPN transistor uses epitaxial planar die construction to ensure consistent gain and low leakage across both elements. Its 6.0V VEBO and 4,000V HBM ESD rating support robust biasing and handling in automated assembly environments.
The device operates over –55°C to +150°C and features Cobo = 6.5pF and Cibo = 30pF at specified test conditions, enabling stable high-frequency small-signal amplification up to 250MHz fT with minimal Miller effect.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40V - maximum safe collector-emitter voltage before breakdown in common-emitter configuration |
| IC | 600mA - continuous DC collector current capability per transistor element |
| PD | 200mW - max steady-state power dissipation on FR-4 PCB with 1oz copper |
| hFE | 40–300 - DC current gain range across 100µA–500mA operating currents |
| fT | 250MHz - unity-gain frequency enabling RF amplifier and fast-switching use |
| VCE(sat) | ≤0.75V @ IC=500mA, IB=50mA - low saturation voltage reduces conduction loss in switching |
| RθJA | 625°C/W - thermal resistance defining junction-to-ambient temperature rise under standard layout |
Pinout & Package
Package: SOT363 - ultra-small 6-pin surface-mount package with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height; matte tin terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Low-impedance current sink node; tied to ground or bias network in common-emitter switch |
| 2 | Base of Transistor 1 | Control input requiring ~0.75–0.95V forward bias to turn on; drives current into collector |
| 3 | Collector of Transistor 1 | High-side output node; connects to load or next stage; supports up to 40V swing |
| 4 | Emitter of Transistor 2 | Independent emitter terminal enabling dual-channel operation without shared reference |
| 5 | Base of Transistor 2 | Second independent control input; electrically isolated from Pin 2 |
| 6 | Collector of Transistor 2 | Second high-side output; allows mirrored or complementary switching/amplification paths |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology | Two fully isolated transistors in one SOT363 package-reduces board area vs. discrete SOT23 solutions |
| Epitaxial planar die | Ensures tight hFE matching between channels and stable β across temperature and current |
| 625°C/W RθJA | Enables 200mW operation on minimal PCB copper; validated per J-STD-020 Level 1 moisture handling |
| 4,000V HBM ESD rating | Eliminates need for external protection in low-voltage signal routing and logic interface applications |
Applications
| LED Driver Circuit | Signal Amplifier Stage |
|---|---|
Use Scenario: Driving multiple indicator LEDs in portable instrumentation with limited PCB real estate. IC Role / Device Role / Timing Role: Dual NPN switch controlling LED anode current paths independently via microcontroller GPIOs. Use Value: Low VCE(sat) minimizes voltage drop and power loss; SOT363 saves >50% board area versus two SOT23 devices. | Use Scenario: Boosting weak sensor signals (e.g., thermistor bridge output) before ADC sampling. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network and emitter degeneration. Use Value: 250MHz fT and 40–300 hFE support stable 10–100× gain up to 10MHz without oscillation. |
| Logic-Level Translator | Current Mirror Reference |
Use Scenario: Interfacing 3.3V MCU outputs to 5V or 12V peripheral enable lines in industrial controllers. IC Role / Device Role / Timing Role: Level-shifting switch using one NPN for pull-up translation and second for feedback stabilization. Use Value: Matched hFE and VBE(sat) ensure consistent threshold and fast edge response (<20ns rise time). | Use Scenario: Generating matched bias currents for analog front-end op-amp compensation networks. IC Role / Device Role / Timing Role: Two-transistor current mirror with emitter resistors for improved ratio accuracy. Use Value: Epitaxial planar construction ensures <5% current mismatch across temperature and supply variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single N-channel MOSFET (30V, 3.2A), not bipolar; gate-driven, no base current required | Suitable for higher-current switching (>500mA), but lacks linear amplification capability | Select when replacing BJT switches with zero gate-drive power and faster turn-off |
| MMDT3904-7-F | Same SOT363 package, dual NPN, but lower VCEO = 40V (same), lower IC = 200mA, hFE = 100–300 | Optimized for signal-level gain rather than power switching; lower saturation voltage only at <100mA | Prefer for low-noise preamplifiers where gain consistency matters more than current drive |
Compared with MMDT4401-7-F, DMN3026LSD-13 offers superior current handling and efficiency in digital switching but forfeits analog linearity, while MMDT3904-7-F trades off collector current headroom for tighter hFE distribution in precision biasing roles.
Availability
MMDT4401-7-F is available at Aetrix Electronics and suitable for LED driver circuits, signal amplifier stages, logic-level translators, and current mirror references requiring stable component supply and RoHS-compliant packaging.
Supply support for MMDT4401-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, computing, and consumer markets.
The MMDT4401 belongs to Diodes' small-signal transistor product line, engineered for space-constrained, low-power amplification and switching in cost-sensitive and thermally demanding applications.
FAQ
What is the maximum continuous collector current per transistor in MMDT4401-7-F?
The absolute maximum continuous collector current is 600mA per transistor element, verified under TA = +25°C with derating applied above 25°C per the power derating curve. At 100°C ambient, usable IC drops to approximately 120mA due to the 625°C/W thermal resistance and 200mW power limit.
Does MMDT4401-7-F support automotive applications?
Yes - Diodes offers the automotive-qualified MMDT4401Q variant, qualified to AEC-Q101 standards and rated for operation from –40°C to +150°C. The MMDT4401-7-F itself is rated for –55°C to +150°C but lacks AEC-Q101 certification and automotive-specific reliability testing.
How does the SOT363 package affect thermal performance compared to SOT23?
SOT363 has higher thermal resistance (RθJA = 625°C/W) than single-transistor SOT23 packages (~400°C/W), due to dual-die integration and smaller copper exposure area. This requires careful PCB layout with thermal vias and copper pours to sustain 200mW dissipation across both transistors simultaneously.
Can MMDT4401-7-F be used in linear amplifier configurations?
Yes - its hFE stability, 250MHz fT, and low Cobo/Cibo support Class-A and Class-AB small-signal amplification up to ~10MHz. However, linearity must be verified per application, as no THD or harmonic distortion data is published in the datasheet.
MMDT4401-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 600mA
- Voltage - Collector Emitter Breakdown (Max):
- 40V
- Vce Saturation (Max) @ Ib, Ic:
- 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 150mA, 1V
- Power - Max:
- 200mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
MMDT4401-7-F FAQ
1.How can I place an order for MMDT4401-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMDT4401-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMDT4401-7-F reliable?
The price and inventory of MMDT4401-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT4401-7-F is usually 5 days.
3.What payment methods are accepted for MMDT4401-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT4401-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMDT4401-7-F?
MMDT4401-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMDT4401-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMDT4401-7-F?
For technical support, including MMDT4401-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT4401-7-F requirements.
6.How does Aetrix verify that MMDT4401-7-F is sourced from the original manufacturer or authorized distributors?
All MMDT4401-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT4401-7-F meets industry standards.
7.What is the process for return or replacement of MMDT4401-7-F?
All MMDT4401-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMDT4401-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMDT4401-7-F part is unused and in its original packaging.
Return procedure for MMDT4401-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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