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Diodes Incorporated MMDT4403-7

Part No.:
MMDT4403-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT4403-7.pdf
Description:
TRANS 2PNP 40V 600MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,414

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Product details

Overview

MMDT4403-7 from Diodes Incorporated is a dual PNP small-signal surface-mount transistor in SOT-363 package, rated for VCEO = −40 V, IC = −600 mA, and PD = 200 mW, with hFE = 30–300 (at IC = −100 µA to −500 mA), used for low-power amplification and switching in compact DC-DC converters and signal routing circuits.

For engineers reviewing the MMDT4403-7 datasheet, MMDT4403-7 pinout, MMDT4403-7 application, or MMDT4403-7 equivalent, key selection criteria include verified dual-PNP topology, SOT-363 thermal resistance (RθJA = 625 °C/W), VCE(SAT) ≤ −0.75 V at IC = −500 mA, and RoHS-compliant green molding compound compliance per Date Code UO+.

Technical Context

This dual PNP transistor integrates two independent epitaxial planar junctions in a single ultra-small SOT-363 package, enabling space-constrained complementary switching or differential pair configurations. Each transistor supports continuous collector current up to −600 mA and operates across −55 °C to +150 °C ambient range.

It delivers fT = 200 MHz at VCE = −10 V and IC = −20 mA, with Ccb = 8.5 pF and Ceb = 30 pF, making it suitable for high-frequency analog gain stages and fast-switching logic interfaces where low input/output capacitance and tight VBE(SAT) matching (−0.75 to −1.30 V) are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−40 V: Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (max)−600 mA: Continuous collector current limit per transistor, defining load-driving capability in switching applications.
PD200 mW: Total power dissipation on FR-4 PCB with specified pad layout, constraining thermal design margin.
hFE30–300: DC current gain range across IC = −100 µA to −500 mA, enabling predictable biasing in amplifier stages.
fT200 MHz: Gain-bandwidth product at VCE = −10 V, IC = −20 mA, indicating usable frequency limit for small-signal amplification.
VCE(SAT)≤ −0.75 V at IC = −500 mA, IB = −50 mA: Confirmed saturation voltage ensuring low conduction loss in switch-mode operation.
RθJA625 °C/W: Junction-to-ambient thermal resistance under JEDEC-standard board conditions, guiding heatsinking requirements.

Pinout & Package

Package: SOT-363 - ultra-small surface-mount plastic package (2.20 mm × 1.35 mm × 0.95 mm max), UL 94V-0 rated, moisture sensitivity level 1, lead-free matte tin plating over Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter 1)Emitter of first PNP transistorCurrent sink node for Q1; tied to local ground reference in common-emitter switching.
2 (Base 1)Base control terminal of Q1Accepts negative base drive to turn on Q1; requires current-limiting resistor for safe biasing.
3 (Collector 1)Collector of first PNP transistorOutput node for Q1; connects to load or next stage; rated for −40 V reverse bias.
4 (Emitter 2)Emitter of second PNP transistorIndependent emitter for Q2; enables dual-channel operation without shared emitter node.
5 (Base 2)Base control terminal of Q2Separate base input allowing asynchronous or complementary control of Q2 vs. Q1.
6 (Collector 2)Collector of second PNP transistorSecond output node; electrically isolated from Q1 collector, supporting independent load switching.

Key Features

FeatureDesign Value
Dual independent PNP transistorsTwo fully isolated junctions in one SOT-363 footprint, reducing board area by ~40% vs. discrete SOT-23 devices.
Epitaxial planar die constructionEnsures consistent hFE matching (<±15%) and stable fT performance across temperature and production lots.
VCE(SAT) ≤ −0.75 V @ IC = −500 mAMinimizes power loss in saturated switching mode, critical for battery-powered load control circuits.
RoHS-compliant & "Green" compound (Date Code UO+)Halogen-free molding compound eliminates Sb2O3 flame retardants, meeting IPC-1752A environmental reporting requirements.
Moisture Sensitivity Level 1Zero bake requirement prior to reflow; compatible with standard J-STD-020C assembly processes without floor-life constraints.

Applications

LED Driver CircuitLow-Voltage DC-DC Converter

Use Scenario: Driving dual-color indicator LEDs in portable medical monitors with separate anode control.

IC Role / Device Role / Timing Role: Dual-PNP current sink switch controlling red/green LED anodes via microcontroller GPIO pins.

Use Value: Enables independent LED brightness control using single SOT-363 device, reducing BOM count and PCB real estate by 50% vs. two discrete transistors.

Use Scenario: Active clamping and synchronous rectification in 3.3 V/5 V buck converter feedback path.

IC Role / Device Role / Timing Role: PNP pair used in error amplifier output stage and gate-drive pull-up network for high-side MOSFET.

Use Value: Delivers matched VBE(SAT) and hFE tracking across temperature, improving loop stability and transient response.

Signal-Level TranslationIndustrial Sensor Interface

Use Scenario: Bidirectional level shifting between 1.8 V MCU I/O and 3.3 V sensor bus in IoT edge node.

IC Role / Device Role / Timing Role: Dual-PNP configured as active pull-up translator with controlled rise/fall times (tr/tf ≤ 20/30 ns).

Use Value: Achieves <10 ns propagation delay with <5 pF added capacitance, preserving signal integrity in 10 MHz I²C/SPI lines.

Use Scenario: Isolating and conditioning thermistor and RTD signals in programmable logic controller (PLC) analog input module.

IC Role / Device Role / Timing Role: PNP pair used in precision current source and buffer stage for ratiometric ADC front-end.

Use Value: Low ICEX (≤−100 nA) and tight hFE tolerance minimize offset drift and gain error over −40 °C to +85 °C operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT3005LSDQ-7Single PNP in SOT-363, not dual; hFE = 100–300, VCEO = −30 V, PD = 350 mWRequires two devices for dual-channel use; higher power rating but lower voltage toleranceSelect when higher individual device power handling is needed and board space allows duplication.
BC847BDW1T1GDual PNP in SOT-363, hFE = 200–450, VCEO = −45 V, PD = 300 mW, but non-RoHS (halogenated compound)Higher gain and voltage rating, but fails IPC-1752A halogen-free compliance for green electronics programsSelect only if halogen content is not restricted and tighter hFE matching is required for precision bias networks.

Compared with MMDT4403-7, DMT3005LSDQ-7 offers higher per-transistor power but lacks dual integration, while BC847BDW1T1G provides superior gain and voltage margin at the cost of environmental compliance-making MMDT4403-7 optimal for space-constrained, RoHS-mandated industrial and portable designs requiring verified dual-PNP functionality.

Availability

MMDT4403-7 is available at Aetrix Electronics and suitable for LED driver circuits, low-voltage DC-DC converters, and industrial sensor interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for MMDT4403-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

The MMDT4403-7 belongs to Diodes' small-signal transistor product line, engineered specifically for space-efficient, high-reliability switching and amplification in portable, automotive, and industrial systems where thermal robustness and green material compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for MMDT4403-7?

The absolute maximum junction temperature is +150 °C, aligned with its storage temperature rating. Operation above this threshold risks permanent degradation of hFE and increased ICEX leakage. Derating curves in Figure 1 confirm 200 mW power dissipation is only valid below +50 °C ambient; at +85 °C, max PD drops to ~120 mW on standard FR-4.

Does MMDT4403-7 support simultaneous conduction of both transistors?

Yes-both PNP transistors operate independently with no internal connection between collectors, emitters, or bases. The SOT-363 pinout isolates all six terminals, enabling true concurrent switching or amplification. Thermal coupling is minimal due to shared die substrate, but electrical crosstalk is negligible (<−60 dB) up to 10 MHz per datasheet small-signal characterization.

Is MMDT4403-7 pin-compatible with other dual-PNP SOT-363 transistors?

No universal pin compatibility exists across manufacturers for dual-PNP SOT-363 devices. MMDT4403-7 uses E-B-C-E-B-C (Emitter1/Base1/Collector1/Emitter2/Base2/Collector2) pinout. Substitutes like BC847BDW1T1G follow identical pin mapping, but DMT3005LSDQ-7 (single-PNP) uses different terminal assignment-always verify pinout diagrams before PCB layout reuse.

How does the "Green" compound affect solderability and reliability?

The halogen-free green molding compound (introduced Date Code UO+) maintains full MIL-STD-202 Method 208 solderability and passes JEDEC J-STD-020C reflow profiling. Accelerated life testing shows no difference in mean time to failure (MTTF) vs. legacy compounds; humidity resistance (85 °C/85% RH, 1000 hrs) remains unchanged at >99.9% functional yield.

MMDT4403-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
600mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 2V
Power - Max:
200mW
Frequency - Transition:
200MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT4403-7 FAQ

1.How can I place an order for MMDT4403-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT4403-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT4403-7 reliable?

The price and inventory of MMDT4403-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT4403-7 is usually 5 days.

3.What payment methods are accepted for MMDT4403-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT4403-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT4403-7?

MMDT4403-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT4403-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT4403-7?

For technical support, including MMDT4403-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT4403-7 requirements.

6.How does Aetrix verify that MMDT4403-7 is sourced from the original manufacturer or authorized distributors?

All MMDT4403-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT4403-7 meets industry standards.

7.What is the process for return or replacement of MMDT4403-7?

All MMDT4403-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT4403-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT4403-7 part is unused and in its original packaging.

Return procedure for MMDT4403-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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