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Diodes Incorporated MMDT4403-7-F

Part No.:
MMDT4403-7-F
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT4403-7-F.pdf
Description:
TRANS 2PNP 40V 600MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,788

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Product details

Overview

MMDT4403-7-F from Diodes Incorporated is a dual PNP small-signal surface-mount transistor in SOT-363 package, rated for VCEO = −40 V, IC = −600 mA, and PD = 200 mW, with hFE = 30–300 (at IC = −100 µA to −500 mA), used for low-power amplification and switching in compact DC-DC converters and signal routing circuits.

For engineers reviewing the MMDT4403-7-F datasheet, MMDT4403-7-F pinout, MMDT4403-7-F application, or MMDT4403-7-F equivalent, key selection criteria include verified dual-PNP configuration, SOT-363 thermal resistance (RθJA = 625 °C/W), VCE(SAT) ≤ −0.75 V at IC = −500 mA, fT = 200 MHz, and RoHS-compliant green molding compound.

Technical Context

This dual discrete PNP transistor integrates two identical epitaxial planar junctions in a single ultra-small SOT-363 package, sharing common emitter connections per device or configured as independent switches. Its design supports simultaneous low-voltage switching and analog amplification with matched hFE tracking across channels.

Thermal performance is defined under JEDEC-standard FR-4 PCB mounting (1″ × 0.85″ × 0.062″), with moisture sensitivity level 1 and maximum junction temperature of +150 °C - enabling use in thermally constrained industrial control modules and portable power management ICs.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−40 V: Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (max)−600 mA: Continuous collector current limit defining switching capacity in load driver stages.
PD200 mW: Power dissipation limit on standard FR-4 board, constraining duty-cycle in PWM applications.
hFE30–300: DC current gain range across IC = −100 µA to −500 mA, enabling bias stability in amplifier bias networks.
fT200 MHz: Gain-bandwidth product confirming usable frequency response up to VHF band in RF front-end switching.
VCE(SAT)−0.75 V @ IC = −500 mA: Saturation voltage determining conduction loss in high-current digital logic interfaces.
RθJA625 °C/W: Junction-to-ambient thermal resistance under specified PCB layout, guiding heatsinking requirements.

Pinout & Package

Package: SOT-363 - ultra-small surface-mount plastic case (UL 94V-0), 0.006 g weight, lead-free matte tin plating over Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1Emitter of Transistor 1Common emitter connection point for first PNP element; tied to ground or reference rail in switch configurations.
2Base of Transistor 1Control input for first transistor; requires negative bias relative to emitter to turn on.
3Collector of Transistor 1Output node for first transistor; sinks current when active in common-emitter switching.
4Collector of Transistor 2Independent output node for second PNP; enables dual-channel load control without shared collectors.
5Base of Transistor 2Separate control input for second transistor; allows asynchronous or complementary drive signals.
6Emitter of Transistor 2Second emitter terminal; may be tied to same rail as Pin 1 or isolated for differential operation.

Key Features

FeatureDesign Value
Dual PNP topologyTwo matched epitaxial planar transistors in one SOT-363 footprint, reducing board area by ~40% vs. discrete SOT-23 pair.
Low VCE(SAT)−0.40 V @ IC = −150 mA ensures <120 mW conduction loss in 3.3 V logic-level switching applications.
High fT200 MHz bandwidth supports clean edge transitions in 50 MHz clock distribution and pulse shaping circuits.
Green molding compoundHalogen-free, Sb2O3-free encapsulant (Date Code UO and later) meeting IPC-JEDEC J-STD-020C Level 1 moisture sensitivity.
RoHS complianceLead-free plating and packaging certified to EU Directive 2011/65/EU, eliminating post-soldering cleaning steps.

Applications

LED Driver CircuitLevel-Shifting Interface

Use Scenario: Driving dual-color indicator LEDs from 3.3 V microcontroller GPIO pins with current limiting.

IC Role / Device Role / Timing Role: Dual PNP switch sinking LED anode current through common cathode, enabling independent on/off control.

Use Value: VCE(SAT) ≤ −0.4 V minimizes voltage drop across transistor, preserving ≥2.8 V forward bias for red/green LEDs.

Use Scenario: Translating 1.8 V logic outputs to 5 V-tolerant inputs in mixed-voltage sensor subsystems.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower configuration with base pulled to 5 V via resistor.

Use Value: hFE ≥ 100 at IC = −1 mA ensures full logic swing translation with <10 ns propagation delay.

DC-DC Converter FeedbackIndustrial I/O Protection

Use Scenario: Isolating error amplifier output from optocoupler input in isolated flyback controllers.

IC Role / Device Role / Timing Role: PNP buffer stage providing current gain and voltage inversion to drive PC817 primary side.

Use Value: fT = 200 MHz supports stable loop compensation up to 500 kHz switching frequencies.

Use Scenario: Protecting PLC digital input channels against reverse polarity and ESD transients.

IC Role / Device Role / Timing Role: Dual PNP clamp pair limiting input voltage to −0.7 V below ground during fault conditions.

Use Value: VEB(OFF) = −5.0 V rating prevents forward conduction during −4 V surges, preserving input integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP switching and amplification applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT301PFB-7Higher VCEO (−60 V), lower RθJA (430 °C/W), but hFE min = 100 only at IC = −10 mA.Better for 24 V industrial bus interfaces; less suitable for low-IC bias networks requiring hFE > 30 at µA levels.Select when higher breakdown margin and thermal headroom outweigh need for wide hFE range.
NSVDMMT3906LT1GSOT-363 package, VCEO = −40 V, but hFE = 100–300 (narrower range), and VCE(SAT) = −0.4 V only at IC = −10 mA.Optimized for digital switching, not linear amplification; lacks guaranteed hFE at IC < −1 mA.Prefer for pure on/off logic buffering where gain linearity is irrelevant.

Compared with MMDT4403-7-F, DMT301PFB-7 offers superior voltage and thermal robustness but sacrifices low-current gain flexibility, while NSVDMMT3906LT1G simplifies digital designs at the cost of analog performance fidelity across operating current extremes.

Availability

MMDT4403-7-F is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, DC-DC converter feedback paths, and industrial I/O protection requiring stable component supply and RoHS-compliant manufacturing.

Supply support for MMDT4403-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

The MMDT4403 belongs to Diodes' small-signal transistor portfolio, engineered specifically for space-constrained, low-power switching and amplification in consumer, computing, and industrial power management systems.

FAQ

What is the marking code for MMDT4403-7-F?

The top-side marking is "K2T", followed by a two-character date code (e.g., "YM" for week 40, 2007). This matches Diodes Inc.'s standardized SOT-363 marking scheme documented in DS30110 Rev. 10, page 4, and is laser-etched on the package body for traceability.

Can MMDT4403-7-F be used in linear amplifier configurations?

Yes - its hFE specification covers IC = −100 µA to −500 mA with monotonic behavior, and VBE(ON) shows predictable variation across temperature (Fig. 3). The 200 MHz fT and low Ccb (8.5 pF) support stable Class-A operation up to 10 MHz with proper biasing.

Is thermal derating required above 25°C ambient?

Yes - Fig. 1 shows maximum power dissipation drops linearly from 200 mW at 25°C to zero at ~150°C ambient. Derating slope is −1.6 mW/°C, calculated from RθJA = 625 °C/W. At 70°C ambient, max PD = 128 mW must be enforced to avoid junction overheating.

Does MMDT4403-7-F support hot-swap or in-circuit programming?

No - it lacks built-in ESD protection diodes or latch-up immunity features. Absolute maximum ratings specify no ESD tolerance beyond standard HBM (per JEDEC JESD22-A114), and VEB(OFF) = −5.0 V limits reverse-bias safety margin. External TVS or series resistors are required for hot-swap environments.

MMDT4403-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
600mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 2V
Power - Max:
200mW
Frequency - Transition:
200MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT4403-7-F FAQ

1.How can I place an order for MMDT4403-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT4403-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT4403-7-F reliable?

The price and inventory of MMDT4403-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT4403-7-F is usually 5 days.

3.What payment methods are accepted for MMDT4403-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT4403-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT4403-7-F?

MMDT4403-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT4403-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT4403-7-F?

For technical support, including MMDT4403-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT4403-7-F requirements.

6.How does Aetrix verify that MMDT4403-7-F is sourced from the original manufacturer or authorized distributors?

All MMDT4403-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT4403-7-F meets industry standards.

7.What is the process for return or replacement of MMDT4403-7-F?

All MMDT4403-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMDT4403-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT4403-7-F part is unused and in its original packaging.

Return procedure for MMDT4403-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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