Diodes Incorporated MMDT4413-7-F

Overview

MMDT4413-7-F from Diodes Incorporated is a complementary NPN/PNP small-signal transistor pair in a single SOT363 package, with NPN section (MMBT4401) rated for 40 V V_CEO, 600 mA I_C, and 250 MHz f_T, and PNP section (MMBT4403) rated for –40 V V_CEO, –600 mA I_C, and 200 MHz f_T; used in dual-rail switching and medium-power amplification within space-constrained consumer and industrial control circuits.

For engineers reviewing the MMDT4413-7-F datasheet, MMDT4413-7-F pinout, MMDT4413-7-F application, or MMDT4413-7-F equivalent, key selection criteria include complementary gain matching (h_FE = 20–300 for both sections), ultra-small SOT363 footprint, AEC-Q101 qualification, and verified thermal derating to 200 mW at +25°C ambient.

Technical Context

This dual-transistor device integrates electrically isolated NPN (MMBT4401) and PNP (MMBT4403) die in one monolithic SOT363 package, enabling push-pull and complementary switching without inter-device layout mismatch. Each transistor supports DC current gain (h_FE) across five test conditions from 100 µA to 500 mA, with saturation voltages specified at matched drive currents (e.g., V_CE(SAT) ≤ 0.75 V at I_C/I_B = 150 mA/15 mA).

Thermal performance is defined for minimum recommended pad layout on 1 oz copper FR4 PCB under still-air conditions, with R_θJA = 625 °C/W and linear power derating above +25°C ambient. Switching parameters-including t_d, t_r, t_s, and t_f-are measured under pulsed conditions (≤300 µs pulse width, ≤2% duty cycle) at ±30 V V_CC and ±15 mA base drive.

Key Specifications

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic package with six terminals, 2.1 mm × 1.3 mm footprint, 0.95 mm height, matte tin-plated terminations, and UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary small-signal transistor pair applications.

Compared with DMC3026LSD-7 and NSVT4403M3T5G, MMDT4413-7-F uniquely delivers matched bipolar gain, complementary switching capability, and ultra-compact SOT363 packaging-making it optimal for space-constrained analog and mixed-signal designs where BJT characteristics (e.g., V_BE predictability, h_FE linearity) are essential.

Availability

MMDT4413-7-F is available at Aetrix Electronics and suitable for motor driver half-bridges, USB port power switches, and audio preamp stages requiring stable component supply, AEC-Q101 compliance, and ultra-small footprint.

Supply support for MMDT4413-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The MMDT4413 belongs to Diodes' complementary transistor pair product line, designed specifically for space-efficient, thermally robust implementations of push-pull amplifiers, dual-rail switches, and bias networks in compact electronic systems.

FAQ

What is the maximum junction temperature for MMDT4413-7-F?

The absolute maximum junction temperature is +150°C, consistent with its operating temperature range of –65°C to +150°C. This rating assumes proper thermal management per the datasheet's recommended pad layout on 1 oz copper FR4 PCB; exceeding this temperature risks permanent degradation of h_FE and increased leakage currents.

Does MMDT4413-7-F support DC biasing in linear amplifier configurations?

Yes-both NPN and PNP sections are characterized for DC current gain (h_FE) across collector currents from 100 µA to 500 mA, with typical values of 20–300. The device supports Class-A and Class-AB biasing, and its V_BE(SAT) and V_CE(SAT) are specified at multiple operating points to facilitate accurate quiescent point design.

How does the SOT363 package affect thermal performance compared to discrete SOT23 devices?

The SOT363 package has a higher thermal resistance (R_θJA = 625 °C/W) than individual SOT23 packages (~400–450 °C/W each), due to shared thermal mass and reduced copper exposure. However, its integrated structure avoids thermal coupling between separate devices and maintains consistent thermal tracking between NPN and PNP sections during dynamic operation.

Is MMDT4413-7-F pin-compatible with other complementary transistor pairs in SOT363?

No-pin assignment follows Diodes' proprietary SOT363 layout (E1-B1-C1-C2-B2-E2). Competing parts like ON Semiconductor's NSS40301MR6T1 use different pinouts (e.g., C1-B1-E1-E2-B2-C2), making direct substitution impossible without PCB redesign or adapter circuitry.