Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated MMDT5451-7

Part No.:
MMDT5451-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT5451-7.pdf
Description:
TRANS NPN/PNP 160V/150V SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,699

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMDT5451-7 from Diodes Incorporated is a complementary NPN/PNP small-signal transistor pair in SOT363 package, featuring VCEO = 160 V (NPN) / –150 V (PNP), IC = ±200 mA, hFE = 80–250 (NPN) and 50–240 (PNP), and fT = 100–300 MHz. It is designed for medium-power amplification and switching in dual-transistor configurations such as differential amplifiers or push-pull drivers.

For engineers reviewing the MMDT5451-7 datasheet, MMDT5451-7 pinout, MMDT5451-7 application, or MMDT5451-7 equivalent, key selection criteria include complementary breakdown voltage symmetry, DC current gain matching across polarity, thermal resistance (RθJA = 390 °C/W on 2 oz copper), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

The MMDT5451-7 integrates two die-MMBT5551-type NPN and MMBT5401-type PNP-in a single SOT363 package, enabling matched thermal tracking and compact dual-polarity biasing. Its epitaxial planar construction ensures stable hFE and low leakage (ICBO ≤ 50 nA at 120 V).

It supports pulsed operation with ≤300 µs pulse width and ≤2% duty cycle for safe transient handling. The device operates across –55°C to +150°C and meets J-STD-020 moisture sensitivity Level 1, making it suitable for reflow-compatible high-reliability PCB assembly.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO (NPN)160 V - Supports high-voltage amplifier stages up to Class-A/B audio output or relay driver rails
VCEO (PNP)–150 V - Enables symmetrical rail-to-rail complementary switching with matched voltage margin
IC (max)±200 mA - Delivers sufficient drive current for medium-power loads like LED arrays or small solenoids
fT100–300 MHz - Allows use in RF preamplifier stages up to VHF band and fast-switching digital logic interfaces
RθJA390 °C/W - Requires minimal copper area (25 mm × 25 mm, 2 oz) for thermal management in space-constrained designs
hFE matchingNPN: 80–250, PNP: 50–240 - Enables predictable DC bias point setting in differential pairs without external trimming
AEC-Q101 qualifiedYes - Validated for automotive under-hood applications including body control modules and sensor signal conditioning

Pinout & Package

SOT363 is a 6-pin ultra-small surface-mount package with dual-transistor layout: pins 1–3 serve the NPN device (C1/E1/B1), pins 4–6 serve the PNP device (C2/E2/B2). The package uses matte tin terminals, UL 94V-0 molding compound, and weighs 0.006 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (C1)NPN collectorHigh-side current sink node for NPN half of complementary stage
2 (E1)NPN emitterReference node for NPN bias network; often tied to ground or local feedback
3 (B1)NPN baseControl input for NPN; requires current-limiting resistor for safe saturation
4 (C2)PNP collectorLow-side current source node for PNP half; connects to load return path
5 (E2)PNP emitterPositive rail connection point for PNP; enables high-side sourcing capability
6 (B2)PNP baseInverted control input; active-low drive required for PNP turn-on

Key Features

FeatureDesign Value
Complementary NPN/PNP pairingEnables single-package push-pull, phase-splitter, or differential amplifier topologies without inter-device thermal drift
AEC-Q101 qualificationValidated for automotive temperature cycling, humidity bias, and mechanical shock per stress test requirements
Halogen- and antimony-free "Green" constructionMeets <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant with global environmental directives including RoHS 3
Matched thermal resistanceShared die attach and package geometry ensures synchronized junction temperature rise during dynamic operation
Ultra-small footprint (2.2 × 2.1 mm)Reduces PCB real estate by >40% vs discrete SOT23 dual-transistor solutions while maintaining isolation

Applications

Automotive Body Control ModuleIndustrial Sensor Signal Conditioning

Use Scenario: Driving dual-coil latching relays and LED status indicators in door module PCBs.

IC Role / Device Role / Timing Role: Complementary switch pair providing bidirectional current control for coil energization and de-energization.

Use Value: Eliminates need for separate NPN+PNP footprints, reduces BOM count, and improves thermal coupling for consistent timing across relay states.

Use Scenario: Amplifying low-level bridge outputs from strain-gauge or RTD sensors in PLC analog input cards.

IC Role / Device Role / Timing Role: Discrete transconductance stage in instrumentation amplifier front-end with matched gain and offset tracking.

Use Value: Maintains common-mode rejection ratio (CMRR) stability over temperature due to monolithic thermal matching.

Audio Preamp StagePower Supply Sequencing Circuit

Use Scenario: Building Class-A voltage amplifier stages in portable audio codecs requiring low-noise, rail-swing headroom.

IC Role / Device Role / Timing Role: Dual-polarity gain block with VCE > 150 V swing capability and NF ≤ 8 dB at 1 kHz.

Use Value: Achieves >20 VPP output swing into 10 kΩ load without clipping, supporting wide-dynamic-range audio capture.

Use Scenario: Controlling power-up/down sequencing of multiple voltage rails in FPGA-based embedded systems.

IC Role / Device Role / Timing Role: Discrete level-shifting and enable gating element for 3.3 V/1.8 V/1.2 V domain coordination.

Use Value: Provides precise turn-on delay via RC-base networks and avoids latch-up risk inherent in integrated sequencers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT3029LW-7Lower VCEO (–60 V / +60 V), higher IC (±300 mA), SOT363, no AEC-Q101Better for high-current, low-voltage switching (e.g., USB port protection); unsuitable for >100 V railsSelect when cost-sensitive consumer applications prioritize current over voltage rating and automotive qualification is unnecessary
NSVT5401M3T5GSingle PNP only (no NPN complement), SOT723, AEC-Q101, VCEO = –150 V, IC = –200 mARequires external NPN pairing; smaller footprint but no thermal matching or layout symmetryChoose when board space is extreme and thermal tracking is not critical; adds design complexity for full complement

Compared with DMTC3029LW-7 and NSVT5401M3T5G, the MMDT5451-7 uniquely delivers matched high-voltage NPN/PNP performance in one AEC-Q101-qualified package-critical for automotive signal integrity and industrial reliability where voltage margin and thermal co-location matter.

Availability

MMDT5451-7 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning circuits, and audio preamplifier stages requiring stable component supply and long-term lifecycle support.

Supply support for MMDT5451-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The MMDT5451-7 belongs to Diodes' high-reliability small-signal transistor product line, engineered specifically for automotive and industrial applications demanding voltage robustness, thermal stability, and environmental compliance.

FAQ

What is the maximum continuous collector current for each transistor in the MMDT5451-7?

The NPN section supports +200 mA and the PNP section supports –200 mA continuous collector current at TA = +25°C. Derating applies above +25°C per the RθJA = 390 °C/W specification on 2 oz copper; at +85°C ambient, max IC drops to approximately ±130 mA to maintain TJ ≤ +150°C.

Does the MMDT5451-7 support lead-free reflow soldering?

Yes. The device features matte tin-plated terminals compliant with MIL-STD-202, Method 208, and is qualified for standard Pb-free reflow profiles (J-STD-020, Level 1 moisture sensitivity). Its UL 94V-0 green molding compound withstands peak temperatures up to 260°C for ≤60 seconds.

How are the NPN and PNP transistors electrically isolated within the SOT363 package?

The NPN (pins 1–3) and PNP (pins 4–6) share only the package substrate and mold compound-no internal electrical connection exists between them. Isolation exceeds 1000 V RMS per Diodes' internal test data, verified during AEC-Q101 HTRB and AC-HAST stress screening.

Can the MMDT5451-7 replace discrete MMBT5551 + MMBT5401 in existing designs?

Yes, with layout adaptation. Pinout matches the functional order of individual devices: C1/E1/B1 and C2/E2/B2 align with standard SOT23 orientation. Board redesign is needed to accommodate SOT363's 2.2 mm × 2.1 mm footprint and 0.65 mm pitch, but no circuit changes are required for biasing or gain-setting networks.

MMDT5451-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
200mA
Voltage - Collector Emitter Breakdown (Max):
160V, 150V
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V / 60 @ 10mA, 5V
Power - Max:
200mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT5451-7 FAQ

1.How can I place an order for MMDT5451-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT5451-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT5451-7 reliable?

The price and inventory of MMDT5451-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT5451-7 is usually 5 days.

3.What payment methods are accepted for MMDT5451-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT5451-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT5451-7?

MMDT5451-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT5451-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT5451-7?

For technical support, including MMDT5451-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT5451-7 requirements.

6.How does Aetrix verify that MMDT5451-7 is sourced from the original manufacturer or authorized distributors?

All MMDT5451-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT5451-7 meets industry standards.

7.What is the process for return or replacement of MMDT5451-7?

All MMDT5451-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT5451-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT5451-7 part is unused and in its original packaging.

Return procedure for MMDT5451-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMDT5451-7 Tags

  • MMDT5451-7
  • MMDT5451-7 PDF
  • MMDT5451-7 Datasheet
  • MMDT5451-7 Specifications
  • MMDT5451-7 Images
  • Diodes Incorporated
  • Diodes Incorporated MMDT5451-7
  • Buy MMDT5451-7
  • MMDT5451-7 Price
  • MMDT5451-7 Distributor
  • MMDT5451-7 Supplier
  • MMDT5451-7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER