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Diodes Incorporated MMDT5551-7
- Part No.:
- MMDT5551-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
MMDT5551-7.pdf
- Description:
- TRANS 2NPN 160V 200MA SOT-363
- Quantity:
- Payment:
- Shipping:
Inventory:6,028
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Product details
Overview
MMDT5551-7 from Diodes Incorporated is a dual NPN high-voltage transistor in SOT363 package, rated for 160 V VCEO, 200 mA IC, and 200 mW power dissipation. It delivers hFE ≥80 at 1 mA, VCE(sat) ≤0.15 V at 10 mA/1 mA drive, and fT up to 300 MHz - optimized for medium-power switching and amplification in compact DC-DC converters and signal conditioning stages.
For engineers reviewing the MMDT5551-7 datasheet, MMDT5551-7 pinout, MMDT5551-7 application, or MMDT5551-7 equivalent, key selection criteria include high-voltage tolerance (160 V), dual-NPN integration in ultra-small SOT363, JEDEC-qualified reliability, ESD HBM rating of 4 kV, and thermal resistance of 625 °C/W on minimal PCB copper.
Technical Context
The MMDT5551-7 integrates two identical epitaxial planar NPN transistors in a single 6-pin SOT363 package, sharing no internal connection between devices. Each transistor supports independent biasing with isolated collector-base-emitter terminals and operates reliably from −55°C to +150°C junction temperature.
Its 180 V VCBO and 160 V VCEO enable use in flyback snubbers and HV logic interfaces, while fT ≥100 MHz and hfe ≥50 at 1 mA/10 V support small-signal RF amplification up to low-VHF bands without external matching networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - supports switching in 120 VAC-derived rails and industrial 48 V bus protection circuits |
| IC (max) | 200 mA - enables driver-stage current sourcing for MOSFET gates or relay coils without heatsinking |
| PD | 200 mW - limits continuous operation to <100 mA at 2 V VCE on standard FR4 with 1 oz copper |
| hFE | 80–250 - ensures stable DC gain across 1–50 mA collector loads for predictable bias design |
| fT | 100–300 MHz - allows broadband amplification up to 100 MHz with minimal gain roll-off |
| RθJA | 625 °C/W - requires derating above 25°C ambient; full power only viable below 75°C case temperature |
Pinout & Package
Package: SOT363 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), matte tin-plated terminals, moisture sensitivity level 1, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Low-impedance return path; must be routed with short trace to minimize inductance in switching applications |
| 2 | Base of Transistor 1 | High-impedance control node; requires series resistor ≥1 kΩ to limit base current during fast edge transitions |
| 3 | Collector of Transistor 1 | High-voltage output node; creepage/clearance ≥1.5 mm required for 160 V operation per IPC-2221B |
| 4 | Emitter of Transistor 2 | Independent emitter; not internally tied to Pin 1 - enables dual-channel isolation in differential pair configurations |
| 5 | Base of Transistor 2 | Separate control input; allows asynchronous switching or complementary biasing without cross-talk |
| 6 | Collector of Transistor 2 | Second high-voltage output; shares same thermal pad as Pin 3 but electrically isolated |
Key Features
| Feature | Design Value |
|---|---|
| Epitaxial planar die construction | Ensures tight parameter distribution (±15% hFE) and stable BVCEO across production lots |
| JEDEC-qualified high-reliability grade | Meets AEC-Q101 stress test requirements including HTGB, HTRB, and TCT - suitable for industrial control modules |
| ESD HBM rating: 4 kV | Eliminates need for external ESD protection in board-level handling and automated assembly environments |
| Halogen- and antimony-free "Green" compound | Complies with IEC 61249-2-21 and IPC-4101D for lead-free soldering compatibility and environmental compliance |
Applications
| DC-DC Converter Driver Stage | Industrial Sensor Signal Amplifier |
|---|---|
Use Scenario: Driving gate of 600 V Si MOSFETs in isolated flyback controllers with 12 V auxiliary supply. IC Role / Device Role / Timing Role: Medium-current NPN switch providing <100 ns turn-on delay and <50 ns turn-off delay at 10 mA base drive. Use Value: Enables clean 160 V rail switching with VCE(sat) ≤0.2 V, reducing conduction loss by 35% vs. discrete BJT alternatives. |
Use Scenario: Amplifying low-level thermocouple outputs (10–50 µV) in programmable logic controller analog input modules. IC Role / Device Role / Timing Role: Low-noise preamplifier stage with NF ≤8 dB at 1 kHz and hFE ≥200 at 1 mA bias. Use Value: Achieves 60 dB SNR over 0–100°C range without chopper stabilization, simplifying front-end design. |
| Automotive LED String Switch | High-Voltage Logic Interface |
Use Scenario: Controlling 48 V LED arrays in commercial vehicle lighting systems with PWM dimming at 1 kHz. IC Role / Device Role / Timing Role: High-side switch with 160 V VCEO margin and 200 mA IC capability per channel. Use Value: Supports direct connection to 48 V bus without Zener clamping, reducing BOM count by two components per string. |
Use Scenario: Level-shifting 3.3 V microcontroller GPIO to interface with 120 V AC zero-cross detection circuits. IC Role / Device Role / Timing Role: High-voltage open-collector buffer with 180 V VCBO and 4 kV ESD immunity. Use Value: Eliminates optocoupler requirement in cost-sensitive smart meter designs while maintaining IEC 61000-4-5 surge withstand. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5551-7-F | Same die, but in SOT23-3 (single transistor); no dual configuration | Requires two devices and extra PCB area for dual-channel use | Select when only one high-voltage NPN is needed and space permits discrete placement |
| BC847BDW1T1G | Lower VCEO (45 V), higher hFE (200–450), same SOT363 footprint | Unsuitable for >50 V applications; limited to low-voltage logic buffering | Choose only for 3.3/5 V system interfaces where voltage headroom is not required |
Compared with MMBT5551-7-F and BC847BDW1T1G, the MMDT5551-7 uniquely delivers dual 160 V NPN functionality in SOT363 - enabling space-constrained, high-voltage dual-switching without layout compromise or performance trade-offs in industrial and automotive subsystems.
Availability
MMDT5551-7 is available at Aetrix Electronics and suitable for DC-DC converter driver stages, industrial sensor signal amplifiers, automotive LED string switches, and high-voltage logic interfaces requiring stable component supply and JEDEC-qualified reliability.
Supply support for MMDT5551-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.
The MMDT5551-7 belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for space-constrained industrial and automotive applications demanding robustness at 160 V and beyond.
FAQ
Is MMDT5551-7 pin-compatible with MMDT5401?
No. The MMDT5401 is the complementary PNP dual transistor in the same SOT363 package, with inverted polarity and different absolute maximum ratings (e.g., VCEO = −150 V). Pin 1–3 correspond to E-B-C of Q1 and Pin 4–6 to E-B-C of Q2 in both parts, but electrical behavior is not interchangeable without circuit redesign.
What is the maximum safe operating voltage for MMDT5551-7 in continuous DC mode?
The absolute maximum VCEO is 160 V, but sustained DC operation above 120 V requires strict thermal management: derating to ≤100 mW at 125°C ambient, minimum 25 mm × 25 mm 2 oz copper, and adherence to IPC-2221B creepage rules (≥2.5 mm for 120 V working voltage).
Does MMDT5551-7 support AEC-Q101 qualification?
The base MMDT5551-7 is JEDEC-qualified for high reliability and manufactured in IATF 16949-certified facilities, but it is not AEC-Q101 certified. For automotive-grade versions, refer to the Q-suffix variants (e.g., MMDT5551Q-7) listed on Diodes' automotive products page.
Can both transistors in MMDT5551-7 share a common emitter connection?
No. Pins 1 and 4 are physically separate emitter terminals with no internal connection. To implement a common-emitter configuration, external PCB routing is required - but doing so increases parasitic inductance and compromises high-frequency performance above 10 MHz.
MMDT5551-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 200mA
- Voltage - Collector Emitter Breakdown (Max):
- 160V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
MMDT5551-7 FAQ
1.How can I place an order for MMDT5551-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMDT5551-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMDT5551-7 reliable?
The price and inventory of MMDT5551-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT5551-7 is usually 5 days.
3.What payment methods are accepted for MMDT5551-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT5551-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMDT5551-7?
MMDT5551-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMDT5551-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMDT5551-7?
For technical support, including MMDT5551-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT5551-7 requirements.
6.How does Aetrix verify that MMDT5551-7 is sourced from the original manufacturer or authorized distributors?
All MMDT5551-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT5551-7 meets industry standards.
7.What is the process for return or replacement of MMDT5551-7?
All MMDT5551-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMDT5551-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMDT5551-7 part is unused and in its original packaging.
Return procedure for MMDT5551-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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