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Diodes Incorporated MMDT5551-7-F

Part No.:
MMDT5551-7-F
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMDT5551-7-F.pdf
Description:
TRANS 2NPN 160V 200MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:206,180

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Product details

Overview

MMDT5551-7-F from Diodes Incorporated is a dual NPN high-voltage transistor in SOT363 package, rated for 160 V VCEO, 200 mA IC, and 200 mW power dissipation. It delivers hFE ≥80 at 1 mA, VCE(sat) ≤0.15 V at 10 mA/1 mA drive, and fT up to 300 MHz - enabling use in medium-power switching and amplification stages of industrial power supplies and signal conditioning circuits.

For engineers reviewing the MMDT5551-7-F datasheet, MMDT5551-7-F pinout, MMDT5551-7-F application, or MMDT5551-7-F equivalent, key selection criteria include high-voltage capability (160 V), dual-NPN integration in ultra-small SOT363, JEDEC-qualified reliability, RoHS/Green compliance, and verified thermal performance on standard FR4 layouts.

Technical Context

This dual NPN transistor uses epitaxial planar die construction for stable gain and breakdown characteristics across temperature. Its 160 V VCEO and 180 V VCBO support operation in flyback snubbers and relay drivers where transient voltage suppression is critical.

The device achieves 100–300 MHz fT with low output capacitance (Cobo ≤6.0 pF) and noise figure ≤8.0 dB at 1 kHz, making it suitable for RF preamplifier and broadband line driver roles where gain-bandwidth and low-noise performance are jointly required.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 160 V - supports switching in 120 VAC-derived rails and flyback topologies without derating.
IC (max) 200 mA - enables direct drive of small relays, LED strings, or logic-level interface loads.
hFE 80–250 - provides predictable current gain across 1–50 mA collector range for stable bias design.
VCE(sat) ≤0.15 V @ 10 mA/1 mA - minimizes conduction loss in saturated-switch applications.
fT 100–300 MHz - allows use in VHF amplifiers and fast-switching digital interfaces up to ~100 Mbps.
RθJA 625 °C/W (min pad) - defines thermal limit for continuous operation on single-layer FR4 PCBs.
ESD HBM 4,000 V - ensures robustness during board assembly and handling in non-ESD-controlled environments.

Pinout & Package

Package: SOT363 - ultra-small surface-mount, 6-pin, dual-transistor configuration with common-emitter layout. Dimensions: 2.15 mm × 2.10 mm × 0.95 mm (L × W × H), 0.65 mm pitch, matte tin terminals.

Pin/Terminal Circuit Role Design Meaning
1 Emitter 1 Low-impedance return path for first NPN transistor; tied to PCB ground plane for thermal and noise control.
2 Base 1 Current-controlled input for first transistor; requires series resistor to limit base drive in switching mode.
3 Collector 1 High-voltage output node; routed with clearance ≥1.5 mm for 160 V applications per IPC-2221.
4 Emitter 2 Shared emitter connection with Pin 1 - enables differential pair or push-pull configurations.
5 Base 2 Independent control input for second NPN; allows asynchronous or complementary switching.
6 Collector 2 Second high-voltage output; electrically isolated from Collector 1 except through PCB routing.

Key Features

Feature Design Value
Dual NPN topology Reduces component count in push-pull drivers, differential amplifiers, and redundant switching paths.
160 V VCEO rating Eliminates need for external clamping in 100–120 VAC auxiliary supplies and DC-DC feedback circuits.
JEDEC-qualified reliability Validated per AEC-Q101 stress tests - supports industrial equipment with >10-year field life expectations.
SOT363 footprint Enables <10 mm² board area usage - critical for space-constrained IoT sensor nodes and portable medical devices.
Halogen- and antimony-free "Green" compound Meets IEC 61249-2-21 and automotive OEM material declarations without compromising thermal or mechanical integrity.

Applications

Industrial Power Supply Feedback Automotive LED Driver

Use Scenario: Isolated feedback loop in 24 V/48 V DC-DC converters using optocoupler-coupled error amplification.

IC Role / Device Role / Timing Role: NPN switch driving optocoupler LED anode; operates in saturation with <0.2 V drop to maximize CTR margin.

Use Value: 160 V rating prevents breakdown during load-dump transients; dual structure allows redundancy or mirrored channel design.

Use Scenario: Constant-current sink for interior map lights and dashboard backlighting in 12 V automotive systems.

IC Role / Device Role / Timing Role: Linear current regulator with PWM dimming input applied to base; dissipates ≤150 mW at 150 mA.

Use Value: hFE stability over −40°C to +125°C ensures consistent brightness; ESD HBM ≥4 kV withstands assembly handling.

RF Signal Amplifier Programmable Logic Interface

Use Scenario: Low-noise preamplifier stage for 30–100 MHz IF signals in AM/FM receiver front-ends.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at 10 mA; configured for 20 dB gain with 8 dB NF at 1 kHz.

Use Value: fT ≥100 MHz and Cobo ≤6 pF enable flat gain response; low VBE(sat) simplifies bias network design.

Use Scenario: Level-shifting and inversion interface between 3.3 V microcontroller GPIO and 5–12 V industrial PLC inputs.

IC Role / Device Role / Timing Role: Digital switch with Schmitt-trigger-compatible input drive; toggles <100 ns propagation delay.

Use Value: Dual configuration allows simultaneous control of two independent loads; VCEO margin prevents latch-up during bus fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN high-voltage transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT5551-7-F Single NPN, same die, identical electrical specs except dual vs. single configuration. Requires two devices for dual-channel use; increases PCB area and BOM count. Select when only one high-voltage NPN is needed and board space permits discrete placement.
BC847BDW1T1G Lower VCEO (45 V), higher hFE (200–450), same SOT363 package. Unsuitable for >50 V applications; better for low-voltage logic interfacing and signal amplification. Choose for cost-sensitive 3.3/5 V systems where voltage headroom is not required.

Compared with MMBT5551-7-F, the dual configuration saves 30% board area and eliminates inter-device matching variance; versus BC847BDW1T1G, the 160 V rating enables direct use in mains-connected auxiliary supplies without additional protection circuitry.

Availability

MMDT5551-7-F is available at Aetrix Electronics and suitable for industrial power supply feedback, automotive LED drivers, RF signal amplifiers, and programmable logic interfaces requiring stable component supply and long-term manufacturability.

Supply support for MMDT5551-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The MMDT5551 belongs to Diodes' high-voltage bipolar transistor product line, engineered for reliability-critical switching and amplification in industrial, automotive, and communications infrastructure applications.

FAQ

Is MMDT5551-7-F qualified for automotive applications?

No - MMDT5551-7-F is not AEC-Q101 qualified. Diodes offers automotive-grade variants with Q-suffix (e.g., MMDT5551Q-7-F) that undergo additional stress testing, PPAP documentation, and IATF 16949 manufacturing controls. Standard MMDT5551-7-F meets JEDEC reliability standards but lacks automotive change control and qualification reporting.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed +150°C. At ambient +85°C and RθJA = 625°C/W (minimum pad layout), maximum allowable power dissipation is 104 mW. Derating is linear above +25°C: 0.32 mW/°C reduction per °C rise in TA. For 200 mW operation, ambient must be ≤25°C with optimal copper layout.

Can Pins 1 and 4 be used independently as separate emitters?

Yes - Pins 1 and 4 are electrically isolated emitters per the internal die layout and SOT363 pinout diagram. They share no internal connection and may be tied to different potentials or grounds. This enables fully independent dual-transistor operation, including differential pairs or cross-coupled configurations.

Does the "K4N" marking indicate date code or product variant?

"K4N" is the product type marking code, not a date code. Per Diodes' marking guide, K4N identifies the MMDT5551 die in SOT363 packaging. Date code appears separately as a two-character suffix (e.g., "M5" = May 2025), located adjacent to K4N on the package top surface.

MMDT5551-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
200mA
Voltage - Collector Emitter Breakdown (Max):
160V
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Power - Max:
200mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMDT5551-7-F FAQ

1.How can I place an order for MMDT5551-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMDT5551-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMDT5551-7-F reliable?

The price and inventory of MMDT5551-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMDT5551-7-F is usually 5 days.

3.What payment methods are accepted for MMDT5551-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMDT5551-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMDT5551-7-F?

MMDT5551-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMDT5551-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMDT5551-7-F?

For technical support, including MMDT5551-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMDT5551-7-F requirements.

6.How does Aetrix verify that MMDT5551-7-F is sourced from the original manufacturer or authorized distributors?

All MMDT5551-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMDT5551-7-F meets industry standards.

7.What is the process for return or replacement of MMDT5551-7-F?

All MMDT5551-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMDT5551-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMDT5551-7-F part is unused and in its original packaging.

Return procedure for MMDT5551-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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