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Microchip Technology MNS1N6627US/TR
- Part No.:
- MNS1N6627US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
MNS1N6627US/TR.pdf
- Description:
- DIODE GEN PURP 440V 1.75A E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:483
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Product details
Overview
MNS1N6627US/TR from Microsemi is a voidless hermetically sealed ultrafast recovery glass rectifier diode rated for 400 V working peak reverse voltage, 2.3 A average forward current at +110°C endcap temperature, and 30 ns low-current reverse recovery time; it serves as a high-reliability power conversion component in military-grade switching power supplies and radiation-hardened DC-DC converters.
For engineers reviewing the MNS1N6627US/TR datasheet, MNS1N6627US/TR pinout, MNS1N6627US/TR application, or MNS1N6627US/TR equivalent, key selection criteria include its MIL-PRF-19500/590 qualification, Category I metallurgical bond, 6.5°C/W junction-to-endcap thermal resistance, and controlled avalanche capability under transient reverse stress.
Technical Context
This device belongs to the 1N6626US–1N6631US ultrafast rectifier family, fabricated with voidless hard-glass hermetic sealing and tungsten slugs for thermal stability. Its internal Category I metallurgical bond ensures mechanical robustness and long-term reliability under thermal cycling and shock.
It operates across –65°C to +150°C junction temperature range with 40 pF capacitance at 10 V reverse bias and supports 75 A non-repetitive forward surge current (8.3 ms half-sine). The dual trr specification-30 ns (low-current) and 45 ns (high-current)-reflects optimized carrier lifetime control for fast turn-off in high-frequency SMPS topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 400 V - Maximum continuous reverse voltage before significant leakage or breakdown in operating temperature range. |
| IF(AV) @ TEC = +110°C | 2.3 A - Sustained DC forward current capability when endcap is held at +110°C, derating linearly above that temperature. |
| trr (low-current) | 30 ns - Time to recover from conduction to blocking state under IF = 0.5 A, critical for >100 kHz switching efficiency. |
| VF @ 2.0 A | 1.35 V - Forward voltage drop at 2 A DC, directly impacting conduction loss and thermal design in high-current paths. |
| RθJEC | 6.5°C/W - Thermal resistance from junction to endcap, enabling direct heatsinking via copper endcaps without PCB vias. |
| IRM (rec) | 3.5 A - Peak reverse recovery current during turn-off, defining snubber sizing and EMI filter requirements. |
| C @ VR = 10 V | 40 pF - Junction capacitance limiting high-frequency noise coupling and affecting zero-voltage switching behavior. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "E" package (also designated D-5B), with copper endcaps finished in Sn/Pb, cathode indicated by band. Dimensions: 7.32 mm × 3.94 mm × 1.78 mm (L × W × H), weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to tungsten slug for low-inductance, high-surge-current path; soldered to copper pad for thermal conduction. |
| Cathode | Forward current exit / reverse-blocking terminal | Marked with visible band; endcap provides mechanical anchoring and thermal interface to heatsink or PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring >20-year operational life in vacuum or high-humidity environments. |
| Category I metallurgical bond | Provides >10⁶ thermal cycles reliability between tungsten slug and semiconductor die, validated per MIL-PRF-19500/590. |
| Controlled avalanche capability | Withstands 5.0 W peak reverse power (per Figure 6), enabling safe operation during inductive load switching transients. |
| Triple-layer passivation | Prevents surface ion migration and gate oxide charging in adjacent circuits, critical for mixed-signal or radiation-exposed systems. |
| Inherent radiation hardness | Qualified to MicroNote 050 specifications: no parametric shift after 100 krad(Si) total ionizing dose exposure. |
Applications
| Aerospace Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: High-density DC bus conditioning in satellite power management units where failure is catastrophic and repair impossible. IC Role / Device Role / Timing Role: Ultrafast rectifier in synchronous buck-derived isolated DC-DC stages, handling 200–500 kHz switching with minimal reverse recovery loss. Use Value: 30 ns trr and 6.5°C/W RθJEC enable >92% efficiency at 400 V input while maintaining junction temperature <130°C under full load. | Use Scenario: Pulse-forming network (PFN) charging in ground-based radar modulators requiring precise timing and high surge tolerance. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode across high-voltage IGBTs, clamping inductive kickback within 45 ns. Use Value: 75 A peak surge rating and controlled avalanche allow safe absorption of 2.5 kV transient spikes without secondary breakdown. |
| Nuclear Instrumentation Systems | High-Reliability Industrial UPS |
Use Scenario: Signal conditioning front-ends in neutron detection electronics deployed in reactor containment zones. IC Role / Device Role / Timing Role: Input rectifier in low-noise, radiation-hardened AC-DC converter powering photomultiplier tube bias supplies. Use Value: Inherent radiation hardness (100 krad tolerance) and <2 µA IR at 400 V ensure stable bias voltage over 15+ years of unattended operation. | Use Scenario: Battery backup inverters in hospital critical-care infrastructure requiring zero-downtime power continuity. IC Role / Device Role / Timing Role: Output rectifier in high-efficiency LLC resonant converter delivering 48 V/20 A to battery charging circuitry. Use Value: 1.35 V VF at 2 A reduces conduction loss by 18% versus standard fast rectifiers, lowering thermal stress on heatsinks and extending capacitor lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6627US (Microsemi) | Same die, identical electrical specs, but axial-leaded TO-204AA (DO-4) package; no tape-and-reel option. | Requires through-hole PCB layout and wave soldering; unsuitable for automated SMT lines. | Select only if legacy board compatibility or manual assembly is required. |
| Vishay VS-1N6627-M3/54 | Surface-mount variant with similar 400 V VRWM and 30 ns trr, but uses epoxy-molded plastic package (DO-213AB) and lacks MIL-PRF-19500/590 qualification. | Not rated for radiation exposure or extended thermal cycling; limited to commercial/industrial environments. | Acceptable for cost-sensitive industrial designs where military reliability is not mandated. |
Compared with MNS1N6627US/TR, the 1N6627US offers identical performance in through-hole form but sacrifices SMT automation, while the VS-1N6627-M3/54 trades hermetic reliability and radiation hardness for lower cost and wider commercial availability-making MNS1N6627US/TR the sole choice for mission-critical aerospace or defense deployments.
Availability
MNS1N6627US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radar transmitter supplies, nuclear instrumentation systems, and high-reliability industrial UPS requiring stable component supply across extended product lifecycles.
Supply support for MNS1N6627US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-qualified analog and mixed-signal components.
The MNS1N6627US/TR belongs to Microsemi's military-qualified ultrafast rectifier product line, engineered specifically for applications where failure is unacceptable-including spaceflight avionics, nuclear facility controls, and battlefield electronics.
FAQ
What is the maximum junction temperature rating for MNS1N6627US/TR?
The MNS1N6627US/TR has a specified junction temperature range of –65°C to +150°C. This wide operating envelope enables deployment in extreme environments such as spacecraft thermal vacuums or desert-deployed radar systems. The 150°C upper limit is sustained under full-rated current when endcap temperature remains ≤+110°C and thermal resistance to heatsink is maintained at ≤6.5°C/W. Exceeding this junction temperature risks irreversible degradation of the voidless glass seal integrity.
Is MNS1N6627US/TR qualified to MIL-PRF-19500/590, and what does that entail?
Yes, MNS1N6627US/TR is fully qualified to MIL-PRF-19500/590 as a JAN or JANTX-level ultrafast rectifier. This qualification mandates rigorous screening including burn-in, temperature cycling, mechanical shock, and hermeticity testing, plus verification of Category I metallurgical bonds and voidless glass construction. It certifies suitability for Class H (–65°C to +125°C) and Class K (+150°C) military applications where single-point failure is unacceptable.
Does MNS1N6627US/TR support tape-and-reel packaging for automated assembly?
Yes, MNS1N6627US/TR is supplied in EIA-481-B compliant tape-and-reel format, enabling direct use in high-speed pick-and-place equipment. The D-5B (Package "E") footprint is compatible with standard SMT reflow profiles, including peak temperatures up to 260°C for 10 seconds. The Sn/Pb-finished copper endcaps ensure reliable solder wetting and intermetallic formation without requiring lead-free process modifications.
How does the controlled avalanche capability of MNS1N6627US/TR improve system robustness?
The controlled avalanche capability of MNS1N6627US/TR allows it to safely absorb transient reverse energy-up to 5.0 W peak reverse power-without destructive breakdown. This feature protects downstream switches (e.g., IGBTs or MOSFETs) during inductive turn-off events in radar modulators or motor drives. Unlike standard rectifiers that fail catastrophically under overvoltage, MNS1N6627US/TR clamps reversely with predictable, non-destructive current flow, preserving system uptime and reducing need for external snubbers.
What is the reverse recovery time specification for MNS1N6627US/TR, and why are there two values?
MNS1N6627US/TR specifies two reverse recovery times: 30 ns under low-current conditions (IF = 0.5 A, IRM = 1.0 A) and 45 ns under high-current conditions (IF = 2 A, di/dt = 100 A/μs). These reflect real-world switching behavior-low-current trr governs light-load efficiency in standby modes, while high-current trr determines losses during full-power operation. Both values are measured per MIL-STD-750 Method 4031, ensuring consistency across military-grade production lots.
MNS1N6627US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 440 V
- Current - Average Rectified (Io):
- 1.75A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 2 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 440 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 150°C
MNS1N6627US/TR FAQ
1.How can I place an order for MNS1N6627US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MNS1N6627US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MNS1N6627US/TR reliable?
The price and inventory of MNS1N6627US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MNS1N6627US/TR is usually 5 days.
3.What payment methods are accepted for MNS1N6627US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MNS1N6627US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MNS1N6627US/TR?
MNS1N6627US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MNS1N6627US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MNS1N6627US/TR?
For technical support, including MNS1N6627US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MNS1N6627US/TR requirements.
6.How does Aetrix verify that MNS1N6627US/TR is sourced from the original manufacturer or authorized distributors?
All MNS1N6627US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MNS1N6627US/TR meets industry standards.
7.What is the process for return or replacement of MNS1N6627US/TR?
All MNS1N6627US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MNS1N6627US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MNS1N6627US/TR part is unused and in its original packaging.
Return procedure for MNS1N6627US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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