Monolithic Power Systems Inc. MP18021HN-A-LF-P

Overview

MP18021HN-A-LF-P from Monolithic Power Systems is a 100V high-frequency half-bridge N-channel MOSFET gate driver in SOIC8 EPAD package, featuring independently controlled high-side and low-side channels with <5ns propagation delay matching, integrated bootstrap diode, and dual UVLO protection. It drives 1nF loads with 12ns/9ns rise/fall times at 12V VDD and supports telecom half-bridge power supplies.

For engineers reviewing the MP18021HN-A-LF-P datasheet, MP18021HN-A-LF-P pinout, MP18021HN-A-LF-P application, or MP18021HN-A-LF-P equivalent, key selection criteria include bootstrap voltage range (100V), gate drive matching tolerance (<5ns), quiescent current (<150µA), and SOIC8 EPAD thermal performance (θJA = 48°C/W).

Technical Context

The MP18021 employs a level-shift architecture to isolate the floating high-side driver from the low-side ground-referenced circuitry, enabling operation with SW node voltages up to 100V. Its internal bootstrap diode eliminates external diode requirements while maintaining VBST–SW regulation within ±0.3V to +18V differential limits.

UVLO thresholds are independently set at 7.7–8.5V for VDD and 6.7–7.5V for VBST–SW, each with 0.5–0.55V hysteresis to prevent oscillation during supply ramp-up. Input logic is TTL-compatible with internal 185kΩ pull-down resistors on INL and INH pins.

Key Specifications

Pinout & Package

MP18021HN-A-LF-P uses an SOIC8 package with exposed thermal pad (EPAD), optimized for PCB heat dissipation (θ_JA = 48°C/W). The exposed pad must be soldered to a solid VSS copper plane for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMM/NOPB, MP18021HN-A-LF-P delivers superior timing precision (<5ns matching vs. >10ns typical), integrated bootstrap diode (reducing component count), and faster 12ns rise time-making it optimal for high-frequency telecom and avionics DC-DC converters demanding minimal dead time and compact layout.

Availability

MP18021HN-A-LF-P is available at Aetrix Electronics and suitable for telecom half-bridge power supplies, avionics DC-DC converters, and two-switch forward converters requiring stable component supply across extended temperature ranges (–40°C to +125°C) and long production lifecycles.

Supply support for MP18021HN-A-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with core expertise in DC-DC conversion, LED drivers, and gate drivers.

The MP18021 belongs to MPS's high-voltage gate driver product line, designed specifically for high-frequency, high-reliability isolated DC-DC topologies in telecom, aerospace, and industrial power systems.

FAQ

What is the maximum allowable V_SW voltage for MP18021HN-A-LF-P?

The absolute maximum V_SW voltage is –5.0V to +100V relative to VSS. This rating enables use in 100V-class half-bridge configurations where the switching node swings from near ground to the full bus voltage. Operation beyond this range risks permanent damage to the internal level shifter and high-side driver.

Does MP18021HN-A-LF-P require an external bootstrap diode?

No. MP18021HN-A-LF-P integrates a bootstrap diode with forward voltage of 0.5V at 100µA and 0.9V at 100mA. This eliminates the need for an external diode, reducing board space and component count while maintaining efficient bootstrap capacitor recharge during high-duty-cycle operation.

How does the dual UVLO function protect the system?

The MP18021HN-A-LF-P implements independent UVLO on both VDD and VBST–SW supplies. If either falls below its threshold (7.7–8.5V for VDD, 6.7–7.5V for VBST–SW), both DRVH and DRVL outputs are forced low. This prevents partial or undefined gate drive states that could cause shoot-through or MOSFET failure during brown-out conditions.

What is the thermal performance of the SOIC8 EPAD package?

The SOIC8 EPAD package has a junction-to-ambient thermal resistance (θ_JA) of 48°C/W under JEDEC JESD51-7 4-layer PCB conditions. With a maximum junction temperature of 150°C and +25°C ambient, it supports up to 2.6W continuous power dissipation-sufficient for most 500kHz–1MHz half-bridge applications with proper PCB copper area.

Can INH and INL be driven by the same PWM signal?

Yes, but only if complementary timing is not required. Driving both inputs identically results in simultaneous high-side and low-side turn-on, causing shoot-through. For safe operation, INH and INL must be driven with complementary, dead-time-inserted signals-either from a dedicated controller or via external logic with controlled delay.

What is the minimum input pulse width supported?

The minimum input pulse width that reliably changes the output is 50ns, as characterized in bench testing. This allows stable operation at switching frequencies up to 10MHz in burst-mode or resonant topologies where narrow gate pulses are used for light-load efficiency optimization.

Is the exposed pad electrically connected internally?

Yes, Pin 7 (VSS) is internally bonded to the exposed pad. The pad must be soldered to a PCB copper pour connected to the system ground plane-not only for thermal conduction but also for low-impedance return path of high-frequency gate drive currents and noise suppression.