Monolithic Power Systems Inc. MP18021HN-LF-P

Overview

MP18021HN-LF-P from Monolithic Power Systems is a 100V high-frequency half-bridge N-channel MOSFET gate driver in SOIC8 EPAD package, featuring independently controlled high-side and low-side channels with ≤5ns propagation delay matching, integrated bootstrap diode, and dual UVLO protection. It drives 1nF loads with 12ns/9ns rise/fall times at 12V VDD and supports telecom half-bridge power supplies.

For engineers reviewing the MP18021HN-LF-P datasheet, MP18021HN-LF-P pinout, MP18021HN-LF-P application, or MP18021HN-LF-P equivalent, key selection criteria include bootstrap voltage range (100V), gate drive matching tolerance (≤5ns), thermal performance (θJA = 48°C/W), and SOIC8 EPAD package compatibility with high-power density DC-DC converter layouts.

Technical Context

The MP18021 employs level-shifted floating driver architecture to control high-side N-MOSFETs referenced to switching node (SW), with independent TTL-compatible INH and INL inputs enabling asymmetric PWM control. Its internal bootstrap diode eliminates external diode requirement while supporting up to 100V BST-to-SW differential voltage.

UVLO thresholds are set at 7.7–8.5V for VDD and 6.7–7.5V for BST–SW, each with 0.5–0.55V hysteresis, ensuring robust turn-off during supply sag. Propagation delays (16ns typ.) and output drive strength (2.5A peak pull-up/pull-down at 16V) are characterized across –40°C to +125°C junction temperature range.

Key Specifications

Pinout & Package

MP18021HN-LF-P uses SOIC8 with exposed thermal pad (EPAD), compliant with JEDEC MS-012 BA. The exposed pad must be soldered to PCB ground plane for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMAX/NOPB, MP18021HN-LF-P uniquely combines 100V BST rating, integrated bootstrap diode, ≤5ns channel matching, and dual-rail UVLO in a thermally enhanced SOIC8 EPAD-making it optimal for compact, high-reliability 48–100V bus telecom and avionics converters demanding tight timing control and minimal external components.

Availability

MP18021HN-LF-P is available at Aetrix Electronics and suitable for telecom half-bridge power supplies, avionics DC-DC converters, and active clamp forward converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP18021HN-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MP18021 belongs to MPS's high-frequency gate driver product line, engineered specifically for high-efficiency, high-density isolated DC-DC conversion in telecom, aerospace, and industrial applications where timing precision, thermal robustness, and integration reduce system footprint.

FAQ

What is the maximum allowable V_SW voltage for MP18021HN-LF-P?

The absolute maximum V_SW rating is –5.0V to +100V relative to VSS. This allows operation with high-side MOSFETs switching up to 100V bus rails while maintaining safe isolation between BST and SW nodes. Operation beyond this range risks permanent damage to the level-shifter and floating driver circuitry.

Does MP18021HN-LF-P require an external bootstrap diode?

No. MP18021HN-LF-P integrates a low-forward-voltage bootstrap diode (0.9V max at 100mA) between VDD and BST pins. This eliminates the need for an external diode, reducing bill-of-materials count and PCB area-confirmed in the "On-chip bootstrap diode" feature list and electrical characteristics table.

How does the dual UVLO function protect the system?

MP18021HN-LF-P implements independent UVLO circuits on both VDD (7.7–8.5V threshold) and BST–SW (6.7–7.5V threshold) rails. If either supply drops below its threshold, the corresponding driver output (DRVH or DRVL) is forced low, preventing partial or undefined gate drive that could cause shoot-through or MOSFET failure.

Can MP18021HN-LF-P drive 2nF gate loads effectively?

While the datasheet specifies 12ns/9ns rise/fall times into 1nF, the 2.5A peak source/sink current at 16V supports heavier capacitive loads. However, driving 2nF will increase rise/fall times proportionally-measured data shows ~17ns/13ns at 1nF load; extrapolation suggests ~24ns/18ns for 2nF, which remains viable for ≤300kHz operation.

What is the role of the exposed pad in SOIC8 EPAD package?

The exposed pad (Pin 7) serves as both the primary thermal conduction path and the electrical ground reference. It must be soldered to a dedicated PCB ground plane with multiple thermal vias to achieve the specified θ_JA = 48°C/W and sustain 2.6W continuous power dissipation without exceeding 125°C junction temperature.

Is MP18021HN-LF-P compatible with 3.3V logic controllers?

Yes. The INH and INL inputs are TTL-compatible with guaranteed recognition of logic high at ≥2.0V and logic low at ≤1.4V. A 3.3V MCU GPIO can directly drive these inputs without level-shifting, as confirmed in the Electrical Characteristics table under "INL/INH High" and "INL/INH Low" parameters.

What is the minimum input pulse width supported?

The minimum input pulse width that reliably changes the output is 50ns, as specified in the Electrical Characteristics table under "Minimum input pulse width that changes the output (T_PW)". This enables use in >10MHz PWM modulation schemes where narrow pulses control burst-mode or adaptive dead-time functions.