Monolithic Power Systems Inc. MP18024HN-LF-P

Overview

MP18024HN-LF-P from Monolithic Power Systems is a high-frequency, 100V half-bridge N-channel MOSFET gate driver in SOIC8E package, delivering matched 4A peak drive current per channel with <5ns propagation delay mismatch, 20ns typical propagation delay, and integrated bootstrap diode for telecom and avionics DC-DC converters.

For engineers reviewing the MP18024HN-LF-P datasheet, MP18024HN-LF-P pinout, MP18024HN-LF-P application, or MP18024HN-LF-P equivalent, this page provides verified timing specs, UVLO thresholds, drive strength under 12V/16V VDD, thermal shutdown behavior, and SOIC8E layout guidance - all critical for high-reliability half-bridge power stage design.

Technical Context

The MP18024HN-LF-P implements independent TTL-compatible INH/INL inputs controlling high-side (DRVH) and low-side (DRVL) drivers via level-shifted floating architecture. Its internal bootstrap diode enables self-biased high-side operation up to 100V VSW, with UVLO on both VDD (8.4V threshold) and BST–SW (7.3V threshold) ensuring safe turn-off during supply sag.

Propagation delays are tightly matched (<5ns TMON/TMOFF), and output stages deliver 4.7A pull-up (low-side) and 4A pull-up (high-side) at 16V VDD. Rise/fall times of 15ns/9ns (DRVL) and 15ns/12ns (DRVH) into 2.2nF loads support >1MHz switching in two-switch forward and active-clamp topologies.

Key Specifications

Pinout & Package

MP18024HN-LF-P uses SOIC8E package (JEDEC MS-012 BA variant) with exposed thermal pad (Pin 7 = VSS). The 8-pin layout supports compact half-bridge gate drive routing with dedicated BST bypass and SW node access.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IRS21844PbF and LM5109BMM/NOPB, MP18024HN-LF-P uniquely combines 100V V_SW, integrated bootstrap diode, <5ns delay matching, and SOIC8E thermal pad - making it optimal for space-constrained, high-efficiency telecom and avionics half-bridge designs requiring guaranteed timing precision and thermal reliability.

Availability

MP18024HN-LF-P is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC-DC converters, and two-switch forward converters requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle support.

Supply support for MP18024HN-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, with focus on efficiency, integration, and thermal robustness.

The MP18024 belongs to MPS's high-voltage gate driver product line, engineered specifically for isolated and non-isolated DC-DC topologies operating up to 100V, emphasizing timing accuracy, UVLO safety, and minimal external component count.

FAQ

What is the maximum allowable dV/dt on the SW pin?

The MP18024HN-LF-P specifies a recommended SW slew rate of <50V/ns in its operating conditions. Exceeding this may cause false triggering of the level shifter or premature UVLO activation due to coupling into the BST node. Layout best practices include minimizing SW loop area and using low-inductance gate resistors to maintain this limit.

Does the integrated bootstrap diode support continuous 100mA current?

Yes - the bootstrap diode is characterized at 100mA with VF = 0.95V max and dynamic resistance RD = 2Ω. It is rated for continuous conduction in typical half-bridge applications with f_sw ≤ 1MHz and duty cycle ≤ 50%, provided the BST capacitor (typically 0.1µF X7R) is properly sized and placed adjacent to Pins 2 and 4.

How does the dual UVLO protect against shoot-through during startup?

Both VDD and BST–SW UVLOs hold DRVH and DRVL low until their respective supplies exceed 8.4V and 7.3V. This ensures neither driver activates before sufficient gate voltage is available - eliminating partial turn-on states that could cause shoot-through during bootstrap capacitor charging or input ramp-up.

Can INH and INL be driven from the same PWM signal?

No - INH and INL are independently controlled inputs. Driving them from the same signal would simultaneously activate both drivers, causing immediate shoot-through. They must be driven with complementary, dead-time-inserted signals - typically from a dedicated PWM controller with adjustable dead-time circuitry.

What is the thermal resistance of the SOIC8E package with exposed pad?

The SOIC8E package has θ_JA = 48°C/W and θ_JC = 10°C/W when mounted on a 4-layer PCB per JESD51-7. Full thermal performance requires soldering Pin 7 (exposed VSS pad) to ≥1 cm² of inner-layer ground copper with ≥4 thermal vias - otherwise θ_JA degrades significantly.

Is the MP18024HN-LF-P qualified for automotive AEC-Q100?

No - the MP18024HN-LF-P is not AEC-Q100 qualified. It is specified for industrial and telecom applications over –40°C to +125°C junction temperature, but lacks automotive-grade stress testing, failure analysis reporting, and PPAP documentation required for automotive deployment.