Monolithic Power Systems Inc. MP1907GQ-P

Overview

MP1907GQ-P from Monolithic Power Systems is a high-frequency, 100V half-bridge N-channel MOSFET gate driver in a 3×3 mm QFN10 package, delivering matched 20 ns propagation delay (typ), <5 ns high-side/low-side timing mismatch, and integrated bootstrap diode. It drives 1 nF loads with 12 ns/9 ns rise/fall times at 12 V VDD and supports telecom half-bridge power supplies and avionics DC-DC converters.

For engineers reviewing the MP1907GQ-P datasheet, MP1907GQ-P pinout, MP1907GQ-P application, or MP1907GQ-P equivalent, key selection criteria include UVLO thresholds (4.6 V rising / 4.1 V falling on both VDD and BST-SW), TTL-compatible dual-input control (INH/INL), independent shoot-through protection, and 2.5 A peak sink/source capability per channel under 16 V supply.

Technical Context

The MP1907GQ-P implements independent high-side (DRVH) and low-side (DRVL) drivers with separate input pins (INH, INL) and dedicated UVLO monitoring on both VDD and BST–SW rails. Its internal bootstrap diode eliminates external diode requirement while maintaining 100 V BST voltage range and supporting switching node (SW) slew rates up to 50 V/ns.

Timing control includes input overlap protection that forces both outputs low when INH and INL are simultaneously high, and latch-reset behavior requiring a rising edge on either input after UVLO recovery. Propagation delays are tightly matched (≤5 ns skew) and specified down to 4.5 V VDD operation.

Key Specifications

Pinout & Package

MP1907GQ-P uses a thermally enhanced 3×3 mm QFN10 package with exposed thermal pad (Pin 9 = VSS). The package integrates an on-chip bootstrap diode and supports PCB-level thermal management via the exposed pad soldered to ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2007PBF and LM5109BMAX/NOPB, MP1907GQ-P delivers superior high-frequency capability (20 ns vs. ≥60 ns delay), integrated bootstrap diode (reducing component count by one), and dual-rail UVLO (enhancing robustness in transient-prone avionics and telecom systems).

Availability

MP1907GQ-P is available at Aetrix Electronics and suitable for battery-powered hand tools, telecom half-bridge power supplies, and avionics DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP1907GQ-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with over two decades of leadership in DC-DC conversion, gate drivers, and motor control solutions.

The MP1907 product line targets high-efficiency, high-frequency half-bridge applications in portable, telecom, and aerospace systems-designed specifically to replace discrete driver + bootstrap diode combinations with a single, timing-optimized IC.

FAQ

What is the minimum recommended bootstrap capacitor value for MP1907GQ-P?

A minimum 0.1 µF ceramic capacitor is recommended between BST and SW pins for stable high-side operation at 500 kHz. For 1 MHz operation or higher current loads, a 0.22 µF X7R capacitor with low ESR (<100 mΩ) is advised to maintain ≥4.6 V BST–SW during full-load duty cycles.

Does MP1907GQ-P support 3.3 V logic inputs directly?

Yes - MP1907GQ-P features TTL-compatible inputs with 1.0 V low threshold and 2.4 V high threshold, enabling direct interface with 3.3 V microcontrollers without level shifters. Input hysteresis of 0.6 V further improves noise immunity in motor drive environments.

How does the UVLO recovery behavior work after a brown-out event?

After VDD or BST–SW recovers above its respective UVLO threshold (4.6 V), both DRVH and DRVL remain low until a rising edge is detected on either INH or INL. This latched shutdown prevents unintended switching during marginal supply conditions and requires explicit controller re-synchronization.

Can MP1907GQ-P drive GaN HEMTs effectively?

Yes - with 12 ns/9 ns rise/fall times into 1 nF and 2.5 A peak current, MP1907GQ-P meets gate drive requirements for common 100 V GaN devices (e.g., EPC2023, GS66508T). Layout must minimize loop inductance, especially on DRVH/SW paths, to preserve switching speed and avoid ringing.

Is the exposed thermal pad (Pin 9) electrically connected to VSS internally?

Yes - Pin 9 is the VSS terminal and the exposed thermal pad is internally bonded to the die substrate. It must be soldered to a solid PCB ground plane with ≥4 thermal vias (0.3 mm diameter) to achieve θJA = 50°C/W and sustain continuous 2.5 W power dissipation at +25°C ambient.

What happens when both INH and INL are held high simultaneously?

The input overlap protection circuit forces both DRVH and DRVL low regardless of UVLO status - a hardware-level safety feature preventing shoot-through. Outputs remain low until one input transitions low, then high again (i.e., a clean rising edge is required to resume normal operation).

Does MP1907GQ-P require external pull-down resistors on INH/INL pins?

No - internal 185 kΩ pull-down resistors on INH and INL eliminate need for external components. These ensure defined low state during MCU reset or unpowered states, preventing undefined gate drive and potential FET latch-up.