Monolithic Power Systems Inc. MP1907GQ-Z

Overview

MP1907GQ-Z from Monolithic Power Systems is a 100V, 2.5A high-frequency half-bridge gate driver IC for N-channel MOSFETs, featuring independently controlled high-side and low-side drivers with <5ns propagation mismatch, integrated bootstrap diode, and UVLO on both VDD and BST-SW rails. It delivers 12ns/9ns rise/fall times into 1nF loads at 12V supply and supports telecom DC-DC converters and battery-powered hand tools.

For engineers reviewing the MP1907GQ-Z datasheet, MP1907GQ-Z pinout, MP1907GQ-Z application, or MP1907GQ-Z equivalent, this device is selected for high-efficiency, high-switching-frequency half-bridge topologies requiring precise timing control, shoot-through protection, and minimal external component count in space-constrained industrial and avionics power stages.

Technical Context

The MP1907GQ-Z implements independent TTL-compatible INH/INL inputs with internal overlap protection logic that forces both DRVH and DRVL low when both inputs are simultaneously high-preventing shoot-through. Its floating high-side driver uses bootstrap biasing with an on-chip diode, eliminating external diode requirements while supporting up to 100V SW node voltage swing.

UVLO circuitry monitors both VDD (4.6V rising threshold) and BST–SW (4.6V rising threshold) independently; outputs remain latched low until a rising edge is detected on either input after UVLO recovery. Propagation delays are tightly matched: TDHRR = 18ns (typ), TDLRR = 20ns (typ), with TMON/TMOFF <5ns skew between high-side turn-on and low-side turn-off transitions.

Key Specifications

Pinout & Package

MP1907GQ-Z uses a 3×3mm QFN10 package with exposed thermal pad (Pin 9 = VSS + thermal slug). Pin 2 is NC; all other pins have defined electrical roles. The layout supports compact half-bridge PCB designs with minimal loop area for high-frequency stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMAX, MP1907GQ-Z uniquely combines 100V rating, integrated bootstrap diode, <5ns timing skew, and dual-rail UVLO-making it optimal for compact, high-frequency, high-reliability half-bridge systems where BOM reduction and timing precision are critical.

Availability

MP1907GQ-Z is available at Aetrix Electronics and suitable for battery-powered hand tools, telecom half-bridge power supplies, and avionics DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP1907GQ-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, motion control, and automotive applications.

The MP1907 belongs to MPS's high-frequency gate driver product line, designed specifically for compact, efficient half-bridge and full-bridge power stages in telecom, industrial, and portable equipment where timing accuracy and integration reduce system size and cost.

FAQ

What is the maximum allowable SW node voltage for MP1907GQ-Z?

The absolute maximum SW voltage is 105V, with recommended operating limit of 100V. This rating allows safe operation in 48V telecom systems with transient spikes and 100V battery-powered tools under load dump conditions. Exceeding 105V risks permanent damage to the BST-to-SW isolation structure.

Does MP1907GQ-Z require an external bootstrap diode?

No. MP1907GQ-Z integrates a low-forward-voltage bootstrap diode (VF = 0.55V @ 100µA) between VDD and BST pins. This eliminates the need for an external diode, reducing PCB area, BOM count, and potential failure points in high-reliability applications such as avionics and telecom infrastructure.

How does the input overlap protection function in MP1907GQ-Z?

When both INH and INL inputs are high simultaneously, internal logic forces DRVH and DRVL low regardless of UVLO status. This hardware-level protection prevents shoot-through in the external MOSFET half-bridge, eliminating reliance on external dead-time generators or firmware-based timing safeguards.

What is the thermal performance of the QFN10 package?

The QFN10 (3×3mm) package has θ_JA = 50°C/W and θ_JC = 12°C/W when mounted on a 4-layer PCB with proper thermal vias to inner ground planes. With 2.5W max power dissipation at +25°C ambient, the junction temperature remains within 125°C limit under typical 500kHz operation with 1nF load.

Can MP1907GQ-Z drive MOSFETs with gate charges exceeding 50nC?

Yes. With 2.5A peak source and 3.5A peak sink capability, MP1907GQ-Z can fully charge/discharge a 50nC gate in ~20ns (t = Q/I), supporting fast switching in high-power motor drives. Rise/fall times remain ≤12ns/9ns into 1nF loads, confirming robust drive strength for typical power MOSFETs.

Is EN pin necessary for normal operation?

No-EN is optional. When left unconnected, its internal 200kΩ pull-down holds EN = 0V, forcing both outputs low. To enable operation, EN must be driven ≥1.5V (logic high). This fail-safe design ensures default-off behavior during power-up or controller reset sequences.

What happens during UVLO recovery on BST–SW rail?

When BST–SW rises above 4.6V (typ), DRVH remains low until a rising edge occurs on INH or INL. This latched behavior prevents unintended high-side turn-on during bootstrap capacitor recharge, ensuring controlled startup and avoiding shoot-through during soft-start phases.