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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Monolithic Power Systems Inc. MP1918GQE-P

Name: MP1918GQE-P
Brand: Monolithic Power Systems Inc.
SKU: MP1918GQE-P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MP1918GQE-P

Manufacturer:: Monolithic Power Systems Inc.

Category:: Gate Drivers

Package:: 14-PowerVFQFN

Datasheet:: MP1918GQE-P.pdf

Description:: 100V, HIGH-FREQUENCY, HALF-BRIDG

Quantity:: RFQ Add To RFQ list

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Inventory:500

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Product details

Overview

MP1918GQE-P from Monolithic Power Systems is a 100V half-bridge gate driver IC designed to drive enhancement-mode GaN FETs or low-threshold N-channel MOSFETs in high-frequency synchronous buck, half-bridge, and Class-D amplifier topologies. It features independent HS/LS TTL logic inputs, separate source/sink gate outputs (HGP/HGN/LGP/LGN), internal BST voltage clamping at 106% VCC, and operates up to several MHz with propagation delay matching of 1.5ns typical.

For engineers reviewing the MP1918GQE-P datasheet, MP1918GQE-P pinout, MP1918GQE-P application, or MP1918GQE-P equivalent, this device supports critical design needs including shoot-through prevention via independent PWM control, GaN-safe gate voltage limiting, adjustable turn-on/turn-off timing via external gate resistors, and robust operation across -40°C to +125°C junction temperature.

Technical Context

The MP1918GQE-P implements a dual-level-shift architecture enabling independent high-side and low-side gate drive with floating bootstrap bias up to 100VDC. Its BST-SW UVLO threshold is set at 80–92% of VCC, and dynamic BST clamp prevents overvoltage during negative SW transients.

It uses dedicated source (1.2Ω) and sink (0.27Ω) output impedances optimized for GaN FETs, delivers 1.6A peak source / 5A peak sink current, and maintains <6ns propagation delay mismatch between HS and LS channels under 1nF load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CC Range	3.7V to 5.5V - Ensures compatibility with standard 5V logic and LDO supplies while maintaining UVLO hysteresis of 350mV.
Max V_SW	100V DC - Supports high-bus applications such as 48V input DC-DC converters and industrial motor drives.
Peak Sink Current	5A - Provides strong turn-off capability to suppress dV/dt-induced false turn-on in GaN FETs.
Propagation Delay Matching	1.5ns typical - Enables precise dead-time control and minimizes shoot-through risk in high-frequency switching.
Min Gate Pulse Width	15ns - Allows stable operation at >30MHz effective switching frequencies (e.g., 100kHz with 15ns minimum on-time).
Thermal Shutdown	170°C - Protects against latch-up during overload or poor heatsinking without requiring external thermal monitoring.
Package	QFN-14 (3mm × 3mm) with wettable flanks - Enables automated optical inspection (AOI) and improves solder joint reliability in high-reliability PCB assembly.

Pinout & Package

MP1918GQE-P is housed in a QFN-14 (3mm × 3mm) package with wettable flanks and exposed thermal pad. Pin 1 is marked by an index area on the top surface; the bottom view shows coplanar leads with lead side wettable for AOI compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1 PGND	Power ground reference	Low-inductance return path for LS gate drive and power stage; must be connected directly to PCB power ground plane.
2 LGN	LS gate sink output	Drives LS-FET gate low; series resistor here controls turn-off speed and dV/dt immunity.
3 LGP	LS gate source output	Drives LS-FET gate high; series resistor here adjusts turn-on slew rate and EMI profile.
4 HGP	HS gate source output	Connects to HS-FET gate; resistor here sets turn-on speed while respecting GaN V_GS,max limits.
5 HGN	HS gate sink output	Provides active pull-down for HS-FET; critical for fast, controlled turn-off in bootstrap configuration.
6 SW	Switch node	Common connection point for HS-FET source and bootstrap capacitor negative terminal; requires minimal loop inductance.
7 BST	Bootstrap rail	Supplies floating HS bias; capacitor between BST and SW must be placed adjacent to pins per layout guidelines.
9 AGND	Signal ground	Reference for PWM inputs and internal logic; isolated from PGND except at single-point 0Ω connection per layout guide.
10, 14 V_CC	Driver supply	Dual V_CC pins reduce supply impedance; each requires local 100nF MLCC decoupling to AGND/PGND respectively.
11 PWMH	HS PWM input	TTL-compatible input (1.7V high threshold); ignored during BST-SW UVLO to force HS-FET off safely.
12 PWML	LS PWM input	Independent TTL input; enables asymmetric dead-time programming and shoot-through protection.

Key Features

Feature	Design Value
Independent HS/LS PWM inputs	Enables full control over dead time, phase shift, and fault recovery without external logic or MCU coordination.
Internal BST voltage clamping	Limits V_BST−V_SW to 106% V_CC, preventing GaN gate oxide overstress during negative SW transients.
Separate gate source/sink outputs	Allows discrete tuning of rise/fall times per FET using external resistors-no compromise between EMI and switching loss.
0.27Ω pull-down resistance	Ensures rapid, low-impedance turn-off path to suppress Miller-induced false turn-on in high-dV/dt environments.
Propagation delay matching ≤6ns	Guarantees consistent timing across HS/LS channels, simplifying dead-time calculation and improving converter efficiency.

Applications

High-Frequency Synchronous Buck Converter

Class-D Audio Amplifier

Use Scenario: 48V-to-12V point-of-load converter operating at 1MHz with EPC2218 GaN FETs.

IC Role / Device Role / Timing Role: Half-bridge gate driver providing independent HS/LS control, BST clamping, and sub-30ns propagation delays.

Use Value: Enables >95% efficiency at 1MHz by minimizing dead-time penalty and eliminating GaN gate overvoltage risk.

Use Scenario: 200W stereo Class-D amplifier with split-rail ±30V supply driving 4Ω loads.

IC Role / Device Role / Timing Role: Dual-channel gate driver delivering matched turn-on/turn-off timing and low-output-impedance drive for low THD+N.

Use Value: Reduces crossover distortion and EMI through precise 1.5ns delay matching and independently adjustable slew rates.

Industrial Half-Bridge Motor Drive

High-Density Power Module

Use Scenario: 100V bus BLDC motor controller with integrated GaN half-bridge in compact enclosure.

IC Role / Device Role / Timing Role: High-voltage gate driver supporting 100V SW node, thermal shutdown at 170°C, and wettable-flank QFN for reflow reliability.

Use Value: Eliminates need for external level shifters or discrete bootstrap diodes while ensuring safe GaN gate biasing.

Use Scenario: 3kW server PSU power module integrating GaN FETs and driver on single DBC substrate.

IC Role / Device Role / Timing Role: Space-constrained gate driver with Kelvin-connected LGP/LGN/HGP/HGN pins and minimal 3mm×3mm footprint.

Use Value: Reduces gate loop inductance by >40% vs. SOIC alternatives, enabling >2MHz operation with stable waveform fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge GaN/MOSFET driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
LM5113SDX/NOPB	Single-supply 100V driver with integrated bootstrap diode; no BST clamping; 3.5ns delay mismatch.	Lacks GaN-specific V_GS protection; requires external clamp for >6V BST; less suitable for >1MHz GaN designs.	Prefer MP1918GQE-P when GaN gate safety, sub-2ns matching, or ultra-high frequency (>2MHz) operation is required.
UCC27611DR	60V max V_SW; no bootstrap circuitry; requires external high-side supply; 1.2A peak sink.	Not usable in 100V bus systems; demands complex floating supply design; insufficient sink strength for fast GaN turn-off.	Select MP1918GQE-P for 100V half-bridge GaN applications where integrated BST, clamping, and 5A sink are mandatory.

Compared with LM5113SDX/NOPB and UCC27611DR, MP1918GQE-P uniquely combines 100V SW rating, internal BST clamping, 5A sink capability, and <2ns delay matching-making it the only qualified option for high-reliability, high-frequency GaN half-bridge systems without external protection circuitry.

Availability

MP1918GQE-P is available at Aetrix Electronics and suitable for high-frequency synchronous buck converters, Class-D audio amplifiers, industrial motor drives, and GaN-based power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP1918GQE-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with over two decades of innovation in DC-DC conversion, motor control, and GaN integration.

The MP1918 product line targets high-efficiency, high-frequency power stages using wide-bandgap devices, emphasizing GaN-safe gate drive, integrated protection, and layout-optimized packaging for next-generation power density.

FAQ

What is the maximum recommended switching frequency for MP1918GQE-P?

The MP1918GQE-P supports operation up to several MHz, with verified stable performance at 1MHz in reference designs using EPC2218 GaN FETs. Minimum gate pulse width is 15ns, allowing practical use beyond 30MHz effective edge rates. Layout quality and gate resistor selection critically impact achievable frequency.

Does MP1918GQE-P require an external bootstrap diode?

No. The MP1918GQE-P integrates bootstrap charging logic that activates only when PWML = 1, eliminating the need for an external diode. This design prevents V_BST−V_SW from exceeding V_CC, and ESD clamping further limits BST-SW to 6V maximum.

How does MP1918GQE-P prevent shoot-through in half-bridge configurations?

MP1918GQE-P prevents shoot-through via independent PWMH and PWML inputs, enabling precise dead-time insertion in the controller. Its UVLO logic ensures HS-FET is forced off when BST-SW falls below threshold, while LS-FET remains controllable-providing fail-safe behavior during bootstrap faults.

Can MP1918GQE-P drive both GaN and silicon MOSFETs?

Yes. It is explicitly designed for enhancement-mode GaN FETs and low-threshold N-channel MOSFETs. Its 0.27Ω pull-down and 1.2Ω pull-up resistances, combined with TTL-input thresholds and BST clamping, optimize performance for both technologies without redesign.

What is the purpose of the two V_CC pins (pins 10 and 14)?

Pins 10 and 14 are separate V_CC connections-one referenced to AGND (signal domain), the other to PGND (power domain)-to minimize noise coupling between logic and gate-drive circuits. Each requires its own 100nF MLCC decoupling capacitor placed near the respective pin.

Is MP1918GQE-P pin-compatible with earlier MP1918 variants?

Yes. MP1918GQE-P shares identical pinout, package (QFN-14), and electrical specifications with MP1918GQE and MP1918GQE-Z. The "-P" suffix denotes tape-and-reel packaging with enhanced moisture sensitivity level (MSL) handling per JEDEC J-STD-020.

MP1918GQE-P Specifications

Product attributes: Attribute value

Manufacturer:: Monolithic Power Systems Inc.

Series:: -

Package/Case:: 14-PowerVFQFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: -

Driven Configuration:: Half-Bridge

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 4.5V ~ 5.5V

Logic Voltage - VIL, VIH:: 1.6V, 1.7V

Current - Peak Output (Source, Sink):: 1.6A, 5A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: 100 V

Rise / Fall Time (Typ):: 5ns, 3ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 14-QFN (3x3)

MP1918GQE-P FAQ

1.How can I place an order for MP1918GQE-P through Aetrix?

Please submit a Request for Quotation (RFQ) for MP1918GQE-P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MP1918GQE-P reliable?

The price and inventory of MP1918GQE-P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP1918GQE-P is usually 5 days.

3.What payment methods are accepted for MP1918GQE-P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP1918GQE-P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MP1918GQE-P?

MP1918GQE-P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MP1918GQE-P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MP1918GQE-P?

For technical support, including MP1918GQE-P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP1918GQE-P requirements.

6.How does Aetrix verify that MP1918GQE-P is sourced from the original manufacturer or authorized distributors?

All MP1918GQE-P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP1918GQE-P meets industry standards.

7.What is the process for return or replacement of MP1918GQE-P?

All MP1918GQE-P units undergo pre-shipment inspection (PSI). If there is an issue with MP1918GQE-P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MP1918GQE-P part is unused and in its original packaging.

Return procedure for MP1918GQE-P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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