Monolithic Power Systems Inc. MP1921GQ-B-P

Overview

MP1921GQ-B-P from Monolithic Power Systems is a 100V, 2.5A high-frequency half-bridge N-channel MOSFET gate driver in QFN10 (3mm×3mm) package. It features independently controlled high-side and low-side drivers with <5ns matching, integrated bootstrap diode, 16ns propagation delay, and dual UVLO protection. It drives 1nF loads with 12ns/9ns rise/fall times at 12V VDD and is used in telecom half-bridge power supplies.

For engineers reviewing the MP1921GQ-B-P datasheet, MP1921GQ-B-P pinout, MP1921GQ-B-P application, or MP1921GQ-B-P equivalent, key selection criteria include bootstrap voltage range (120V), gate drive matching (<5ns), TTL-compatible inputs, quiescent current (<150µA), and thermal performance in QFN10 with exposed pad.

Technical Context

The MP1921GQ-B-P implements a level-shifted floating driver architecture for high-side N-MOSFET control, with independent INH/INL inputs enabling dead-time programmability to prevent shoot-through. Its internal bootstrap diode supports up to 120V BST–SW differential voltage and handles 100mA forward current with 0.9V typical VF.

UVLO thresholds are set at 8.1V (VDD) and 7.1V (VBST–SW) with 0.5V hysteresis each, forcing outputs low during undervoltage conditions. Propagation delays are tightly matched between channels (≤5ns skew), and output stages deliver ±2.5A peak current at 16V VDD for fast 1nF load switching.

Key Specifications

Pinout & Package

MP1921GQ-B-P is housed in a thermally enhanced QFN10 (3mm×3mm) package with exposed thermal pad (Pin 9). The package supports ≤2.5W continuous power dissipation at 25°C ambient and requires PCB land pattern per JEDEC MO-229 VEED-5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2004SPBF and LM5109BMAX/NOPB, MP1921GQ-B-P offers superior timing precision (<5ns matching), integrated bootstrap diode, and dual-rail UVLO-making it optimal for high-frequency, high-reliability 100V half-bridge designs where layout simplicity and timing margin are critical.

Availability

MP1921GQ-B-P is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC/DC converters, and two-switch forward converters requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for MP1921GQ-B-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MP1921 product line targets high-efficiency, high-frequency isolated and non-isolated DC/DC converters, emphasizing timing accuracy, integrated features, and robust operation in demanding power conversion environments.

FAQ

What is the maximum allowable BST–SW voltage for MP1921GQ-B-P?

The absolute maximum BST–SW voltage is +120V, with recommended operating limit at +100V. This rating enables safe operation in 100V bus applications with margin for voltage spikes. Exceeding 120V risks permanent damage to the internal bootstrap diode and level-shifter circuitry.

Does MP1921GQ-B-P require an external bootstrap diode?

No. MP1921GQ-B-P integrates a 100mA-rated bootstrap diode with 0.9V typical forward voltage. External diodes are unnecessary unless higher current or lower VF is required-e.g., >100mA peak bootstrap charge current in very high-frequency designs.

How does the dual UVLO function protect the system?

The MP1921GQ-B-P monitors both VDD (8.1V threshold) and BST–SW (7.1V threshold) independently. If either falls below its threshold, the corresponding driver output is forced low-preventing partial turn-on of MOSFETs during brownout or bootstrap capacitor discharge, thereby avoiding shoot-through and device failure.

Can INH and INL be driven by the same PWM signal?

Yes, but only in topologies like two-switch forward where both MOSFETs switch simultaneously. For half-bridge or active-clamp forward, independent INH/INL signals with controlled dead time are mandatory to prevent shoot-through-verified by the TMON/TMOFF timing specs (≤5ns).

What is the thermal resistance from junction to case (θ_JC) for MP1921GQ-B-P?

The measured θ_JC is 12°C/W, based on JESD51-7 testing on a 4-layer PCB. This value reflects heat flow from die to the exposed thermal pad (Pin 9), which must be soldered to a solid copper ground plane for effective thermal management at full 2.5A drive capability.

Is MP1921GQ-B-P RoHS-compliant and halogen-free?

Yes. MP1921GQ-B-P is lead-free, halogen-free, and fully compliant with the EU RoHS directive. MPS confirms green status on its official Quality Assurance page, and the device meets IPC/JEDEC J-STD-020 moisture sensitivity level MSL3.

What is the minimum input pulse width supported by MP1921GQ-B-P?

The minimum input pulse width that reliably changes the output is 50ns, guaranteed by design. This allows stable operation at switching frequencies up to ~10MHz (for 5% duty cycle), though practical limits are governed by gate charge, layout, and thermal constraints.