Monolithic Power Systems Inc. MP1921HQE-A-LF-P

Overview

MP1921HQE-A-LF-P from Monolithic Power Systems is a high-frequency, 100V half-bridge gate driver IC for N-channel MOSFETs, featuring independently controlled high-side and low-side outputs with <5ns propagation matching, integrated bootstrap diode, and dual UVLO protection on VDD and BST-SW. It delivers 2.5A peak sink/source current, 12ns/9ns rise/fall times into 1nF load at 12V VDD, and operates across 9–18V supply range in telecom DC-DC and motor drive applications.

For engineers reviewing the MP1921HQE-A-LF-P datasheet, MP1921HQE-A-LF-P pinout, MP1921HQE-A-LF-P application, or MP1921HQE-A-LF-P equivalent, key selection criteria include bootstrap voltage tolerance (120V), gate drive timing precision (<5ns matching), thermal performance in QFN9 (θJA = 50°C/W), and independent INH/INL control for shoot-through prevention in hard-switched topologies.

Technical Context

The MP1921HQE-A-LF-P implements a level-shifted floating driver architecture with dedicated high-side and low-side channels, enabling operation with SW node voltages up to +100V and slew rates <50V/ns. Its internal bootstrap diode eliminates external diode requirement while supporting 120V BST voltage range and 0.9V forward drop at 100mA.

UVLO thresholds are set at 7.7–8.5V for VDD and 6.7–7.5V for BST–SW, each with 0.5–0.55V hysteresis, ensuring robust fault recovery. Input logic is TTL-compatible with 1–1.4V low and 2–2.4V high thresholds, and internal 185kΩ pull-down resistors simplify control interface design.

Key Specifications

Pinout & Package

MP1921HQE-A-LF-P is housed in a 3×3mm QFN9 package with exposed thermal pad (pin 7 connected to VSS). The package supports high-power density layouts and provides θJA = 50°C/W on standard 4-layer PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with MP1921HQE-A-LF-P, the QFN8 variant trades pin flexibility for identical electrical specs and thermal performance, while the QFN10 offers superior thermal dissipation at the cost of larger area-enabling optimization for either layout density or long-term reliability under full-load conditions.

Availability

MP1921HQE-A-LF-P is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC-DC converters, and industrial motor drives requiring stable component supply, RoHS-compliant packaging, and guaranteed long-term availability.

Supply support for MP1921HQE-A-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MP1921 series targets high-frequency, high-voltage half-bridge applications in telecom, aerospace, and industrial power conversion, emphasizing timing precision, integrated bootstrap capability, and robust UVLO protection.

FAQ

What is the maximum allowable SW node voltage for MP1921HQE-A-LF-P?

The absolute maximum SW voltage is +105V for durations under 100ns and +100V for continuous operation per the Recommended Operating Conditions table. This rating enables use in 48V and 100V bus systems with margin for transient overshoot, provided slew rate remains below 50V/ns to avoid latch-up.

Does MP1921HQE-A-LF-P require an external bootstrap diode?

No. The device integrates a bootstrap diode with 0.9V forward voltage at 100mA and 2.5Ω dynamic resistance, eliminating the need for an external diode and reducing PCB area and component count in half-bridge designs.

How does the dual UVLO function protect the system?

Separate UVLO circuits monitor VDD (7.7–8.5V threshold) and BST–SW (6.7–7.5V threshold), forcing both DRVH and DRVL outputs low when either supply falls below its respective threshold. This prevents partial turn-on of MOSFETs during brown-out or bootstrap capacitor depletion, avoiding shoot-through and thermal runaway.

Can MP1921HQE-A-LF-P drive MOSFETs with gate charges exceeding 50nC?

Yes. With 2.5A peak sink/source current and 12ns/9ns rise/fall times into 1nF, it can fully charge/discharge gates up to ~60nC within 25ns, supporting common power MOSFETs used in 100V half-bridge applications without external gate buffers.

What is the purpose of the NC pin in the QFN9 package?

Pin 5 is a no-connect terminal-unbonded at the die level-and serves only as a mechanical alignment aid during assembly. It must remain unconnected on the PCB and should not be tied to any net, including ground or VDD, to avoid unintended coupling or thermal path disruption.

Is the MP1921HQE-A-LF-P pin-compatible with other MP1921 variants?

No. While electrically identical, MP1921HQE-A-LF-P (QFN9) has a unique pinout versus MP1921HQ-A (QFN8) and MP1921HR-A (QFN10), particularly in INH/INL placement and inclusion of NC pins. Direct replacement requires PCB redesign to match the 9-pin mapping.

What thermal derating applies above 25°C ambient?

With θJA = 50°C/W, junction temperature rises 50°C per watt of dissipated power. At 100mW dissipation, T_J = 25°C + (0.1W × 50°C/W) = 30°C. Full derating begins at T_A = 125°C – (P_D × 50), where P_D is actual power dissipation-ensuring T_J stays ≤125°C per Recommended Operating Conditions.