Monolithic Power Systems Inc. MP1923GRE-P

Overview

MP1923GRE-P from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with 100V switching node rating, 8A sink/7A source peak output current at 12V VDD, <5ns HS/LS propagation delay matching, integrated bootstrap diode, and QFN-10 (4mm×4mm) package. It drives motor inverters and telecom DC/DC converters requiring precise timing control and shoot-through prevention.

For engineers reviewing the MP1923GRE-P datasheet, MP1923GRE-P pinout, MP1923GRE-P application, or MP1923GRE-P equivalent, key selection criteria include bootstrap voltage range (120V), UVLO thresholds (4.5V falling), 7.2ns/5.5ns rise/fall times into 1nF, independent INH/INL control logic, and thermal shutdown at 165°C.

Technical Context

The MP1923GRE-P implements dual independent gate drivers: a floating high-side channel referenced to SW with BST-supplied bias, and a low-side channel referenced to VSS. Its internal bootstrap diode eliminates external diode placement while supporting up to 120V BST–SW differential voltage.

UVLO protection operates separately on VDD (4.1–4.9V falling threshold) and BST–SW (1.4–4.6V falling threshold), forcing both DRVH and DRVL low during undervoltage conditions. Propagation delays are matched to <5ns between HS and LS channels, enabling dead-time control down to 1ns minimum pulse width.

Key Specifications

Pinout & Package

MP1923GRE-P uses a thermally enhanced QFN-10 (4mm × 4mm) package with exposed pad for improved heat dissipation. The exposed pad must be soldered to VSS for optimal thermal performance (θ_JA = 47°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with MP1923GRE-P, MP1921GR-Z trades thermal headroom for compactness, while UCC27211D sacrifices drive strength and integration for vendor compatibility-neither matches the 8A/7A drive capability, <5ns matching, or integrated diode of the MP1923GRE-P in high-frequency, high-power half-bridge designs.

Availability

MP1923GRE-P is available at Aetrix Electronics and suitable for motor drivers, telecom power supplies, and avionics DC/DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for MP1923GRE-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, including DC/DC converters, LED drivers, and gate drivers, with global manufacturing and quality certifications.

The MP1923 product line delivers high-frequency, high-voltage half-bridge gate drivers optimized for motor control, telecom, and aerospace power conversion where precision timing, thermal robustness, and integration are critical.

FAQ

What is the maximum allowable BST–SW voltage for MP1923GRE-P?

The absolute maximum BST–SW voltage is +120V, with a recommended operating limit of +100V per the datasheet's SW voltage specification. Exceeding 120V risks permanent damage to the internal bootstrap diode and high-side driver circuitry, even for transient events under 2µs.

Does MP1923GRE-P require an external bootstrap diode?

No. MP1923GRE-P integrates a bootstrap diode with 0.5–0.9V forward voltage at 100µA and 1.0–1.2V at 100mA. This eliminates the need for an external diode, reducing component count and PCB area while maintaining reliable bootstrap capacitor recharge across temperature.

How is shoot-through prevented in MP1923GRE-P designs?

Shoot-through is prevented through independent INH/INL control with <5ns propagation delay matching, enabling precise dead-time insertion in the PWM controller. The device also features dual UVLO that forces both DRVH and DRVL low during insufficient VDD or BST–SW voltage, adding hardware-level protection.

What is the thermal resistance of the QFN-10 package?

The MP1923GRE-P QFN-10 package has θ_JA = 47°C/W and θ_JC = 7°C/W when mounted on a 4-layer JEDEC-standard PCB. The exposed pad must be soldered to a solid VSS plane with ≥4 thermal vias to achieve these values; omitting this increases θ_JA by >15°C/W.

Can MP1923GRE-P drive both MOSFETs simultaneously in a two-switch forward topology?

Yes. The MP1923GRE-P supports simultaneous HS/LS turn-on and turn-off in two-switch forward converters, as confirmed in the Reference Design Circuits section. Its independent INH/INL inputs allow synchronized control, and its 100V SW rating accommodates the full input voltage swing in this topology.

What is the minimum input pulse width supported by MP1923GRE-P?

The guaranteed minimum input pulse width is 50ns, as specified in the Electrical Characteristics table under "Minimum input pulse width to change the output." This allows reliable operation at switching frequencies up to ~10MHz in edge-triggered configurations, though practical limits are set by layout and load capacitance.

Is MP1923GRE-P compatible with 3.3V logic controllers?

No. MP1923GRE-P inputs are TTL-compatible with VIH(min) = 2.0V and VIL(max) = 1.2V, making them unsuitable for direct 3.3V logic without level-shifting. A 3.3V controller output may not reliably exceed the 2.0V high-threshold across temperature and process variation.