Monolithic Power Systems Inc. MP1923GRE-Z

Overview

MP1923GRE-Z from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with independent high-side and low-side control channels, <5ns propagation delay matching, 8A sink/7A source peak output current at 12V VDD, integrated bootstrap diode, and 100V switching node rating. It enables compact, efficient motor drivers and telecom DC/DC converters requiring fast, shoot-through-protected switching.

For engineers reviewing the MP1923GRE-Z datasheet, MP1923GRE-Z pinout, MP1923GRE-Z application, or MP1923GRE-Z equivalent, this page delivers verified technical context, QFN-10 package mapping, real-world timing performance (7.2ns tRISE, 5.5ns tFALL into 1nF), UVLO thresholds (4.5V falling), and validated alternative options for half-bridge gate drive systems.

Technical Context

The MP1923GRE-Z implements dual independent TTL-compatible input logic paths (INH for high-side, INL for low-side) with matched propagation delays (<5ns difference between HS and LS turn-on/off edges), enabling precise dead-time control in hard-switched topologies. Its floating high-side driver uses bootstrap biasing with an on-chip diode and supports up to 120V BST-to-SW differential voltage.

UVLO protection operates separately on VDD (4.1–4.9V falling threshold) and BST–SW (1.4–4.6V falling threshold), forcing both DRVH and DRVL low during undervoltage conditions. Thermal shutdown activates at 165°C with 25°C hysteresis, and the exposed thermal pad must be connected to VSS for reliable 2.66W power dissipation in QFN-10.

Key Specifications

Pinout & Package

MP1923GRE-Z is housed in a thermally enhanced QFN-10 (4mm × 4mm) package with an exposed thermal pad on the underside. The pad must be soldered to a VSS-connected copper plane using multiple vias for optimal thermal performance (θ_JA = 47°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with MP1923GRE-Z, MP1921GR-Z offers identical drive strength in a smaller footprint but reduced thermal headroom, while LM5109BMAX/NOPB trades integration and speed for legacy SOIC compatibility and lower cost - making MP1923GRE-Z optimal for high-frequency, high-current, thermally demanding half-bridge systems.

Availability

MP1923GRE-Z is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, consistent QFN-10 packaging, and guaranteed long-term availability.

Supply support for MP1923GRE-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, including DC/DC converters, LED drivers, and gate drivers, with global manufacturing and quality certifications.

The MP1923 product line targets high-efficiency, high-frequency power conversion systems - specifically engineered for half-bridge topologies in motor control, telecom, and aerospace applications where timing precision and thermal resilience are critical.

FAQ

What is the maximum allowable V_SW voltage for MP1923GRE-Z?

The absolute maximum V_SW rating is +100V under continuous operation, with short-duration (≤2µs) tolerance up to +120V. Exceeding +100V continuously risks latch-up or permanent damage to the high-side driver stage, especially during startup or fault conditions.

Does MP1923GRE-Z require an external bootstrap diode?

No - MP1923GRE-Z integrates a bootstrap diode rated for 100mA continuous forward current and 1.2V max forward voltage at 100mA. This eliminates the need for an external diode, reducing bill-of-materials count and PCB area in half-bridge layouts.

How is dead-time managed between HS and LS outputs?

Dead-time is controlled externally via independent INH and INL signals - the MP1923GRE-Z does not generate internal dead-time. Engineers must insert sufficient delay (≥50ns minimum pulse width) between falling edges of INH and INL to prevent shoot-through, leveraging the <5ns channel matching for precise timing margins.

What is the recommended PCB layout practice for the exposed thermal pad?

The exposed pad must be soldered to a solid VSS copper plane using ≥4 thermal vias (0.3mm diameter) placed within 2mm of pad edges. The pad should not be floated or connected only through traces - direct low-impedance grounding is required to achieve the specified 47°C/W θ_JA and prevent thermal shutdown above 1.8W.

Can MP1923GRE-Z drive 100V GaN FETs?

Yes - its 100V V_SW rating, 120V BST capability, and fast 7.2ns rise time make it compatible with enhancement-mode GaN FETs requiring gate drive up to 6V. However, GaN-specific layout practices (minimized loop inductance, Kelvin source connections) remain essential to avoid oscillation or overvoltage.

What happens during BST–SW undervoltage condition?

When BST–SW falls below 1.4V (typical falling threshold), the high-side driver is disabled and DRVH is forced low - independent of INH state. This prevents weak or undefined high-side gate drive that could cause shoot-through or MOSFET failure during bootstrap capacitor discharge.

Is MP1923GRE-Z RoHS and halogen-free compliant?

Yes - MP1923GRE-Z is lead-free, halogen-free, and fully compliant with EU RoHS Directive 2011/65/EU. Full compliance documentation, including material declarations and test reports, is available on the MPS Quality Assurance website.