Monolithic Power Systems Inc. MP1923GR-P

Overview

MP1923GR-P from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with independent high-side and low-side control channels, <5 ns propagation delay matching, 8 A sink / 7 A source peak output current at 12 V VDD, and integrated bootstrap diode. It operates across 5–17 V VDD, supports 100 V switching node voltage, and targets high-efficiency DC/DC converters requiring precise timing and shoot-through prevention.

For engineers reviewing the MP1923GR-P datasheet, MP1923GR-P pinout, MP1923GR-P application, or MP1923GR-P equivalent, this page delivers verified technical context, package-specific pin functions, real-world motor and telecom power supply use cases, and validated alternative options for half-bridge gate drive systems.

Technical Context

The MP1923GR-P implements dual independent TTL-compatible input logic paths (INH for high-side, INL for low-side), each driving matched floating and grounded gate drivers with sub-5 ns inter-channel delay. Its bootstrap architecture enables high-side operation up to 120 V BST–SW differential, with internal UVLO thresholds of 4.5 V (VDD falling) and 3.7 V (BST–SW rising).

It integrates a monolithic bootstrap diode (VF = 0.9 V @ 100 µA), supports 1 nF capacitive loads with 7.2 ns rise time and 5.5 ns fall time, and features thermal shutdown at 165 °C with 25 °C hysteresis - all within a QFN-8 (4 mm × 4 mm) thermally enhanced package with exposed pad.

Key Specifications

Pinout & Package

MP1923GR-P is packaged in a thermally optimized QFN-8 (4 mm × 4 mm) with exposed thermal pad. The package supports high-power dissipation (θJA = 47 °C/W on 4-layer PCB) and requires soldering the exposed pad to a solid ground plane for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with MP1921GR-Z, MP1923GR-P delivers 67% higher peak current and full 100 V support; versus LM5109BMAX/NOPB, it reduces component count by integrating the bootstrap diode and doubles output drive capability - critical for high-frequency, high-power density designs.

Availability

MP1923GR-P is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP1923GR-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with design expertise in DC/DC converters, gate drivers, and motor control solutions.

The MP1923 product line targets high-frequency, high-voltage half-bridge gate drive applications in telecom, industrial, and aerospace power systems - emphasizing timing precision, integration, and thermal resilience.

FAQ

What is the maximum allowable switching node (SW) voltage for MP1923GR-P?

The absolute maximum SW voltage is +100 V under continuous operation, with transient capability up to +120 V for durations under 2 µs. This rating is validated across -40°C to +125°C junction temperature and enables use in 48 V and 54 V telecom systems with margin for voltage spikes.

Does MP1923GR-P require an external bootstrap diode?

No. MP1923GR-P integrates a monolithic bootstrap diode with 0.9 V forward voltage at 100 µA, eliminating the need for an external diode. This reduces PCB area, improves reliability, and avoids reverse recovery-related ringing in high-dV/dt environments.

How is shoot-through prevented in MP1923GR-P?

Shoot-through is mitigated through independent INH/INL inputs allowing precise dead-time insertion, <5 ns propagation delay matching between HS and LS channels, and dual UVLO that forces both outputs low during supply undervoltage - preventing partial or overlapping conduction.

What thermal management is required for MP1923GR-P in continuous 8 A operation?

At 8 A peak current and 500 kHz switching, the QFN-8 package requires the exposed thermal pad to be soldered to a ≥2 cm² internal or external copper ground plane with ≥4 thermal vias. On a 4-layer PCB, θJA is 47 °C/W - limiting ambient temperature to ≤85°C for 125°C max junction.

Can MP1923GR-P drive GaN HEMTs?

Yes - its 7.2 ns rise time, 5.5 ns fall time, and 8 A sink/7 A source capability meet typical GaN gate drive requirements. However, layout must minimize gate loop inductance, and UVLO thresholds should be verified against GaN driver voltage needs (e.g., 0–6 V logic).

Is MP1923GR-P pin-compatible with other MPS half-bridge drivers?

MP1923GR-P shares the same QFN-8 (4 mm × 4 mm) footprint and pinout as MP1921GR-Z, enabling drop-in replacement where 100 V and 8 A ratings are not required. It is not compatible with SOIC-8 variants like MP1923GS due to differing pin assignments.

What is the minimum input pulse width supported by MP1923GR-P?

The minimum input pulse width is 50 ns - guaranteed by design - enabling reliable operation at switching frequencies up to 10 MHz in burst-mode or resonant control schemes where narrow gate pulses are used for zero-voltage switching detection.