Monolithic Power Systems Inc. MP1923GS-P

Overview

MP1923GS-P from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with independent high-side and low-side control channels, 8A sink/7A source peak output current at 12V VDD, <5ns channel-to-channel propagation delay matching, and integrated bootstrap diode. It operates up to 100V SW voltage and supports motor drivers and telecom DC/DC converters.

For engineers reviewing the MP1923GS-P datasheet, MP1923GS-P pinout, MP1923GS-P application, or MP1923GS-P equivalent, this page delivers verified package mapping (SOIC-8), confirmed timing specs (20ns typical propagation delay), real-world UVLO thresholds (4.5V falling), and validated alternative options for half-bridge gate drive in high-voltage switching systems.

Technical Context

The MP1923GS-P implements dual independent TTL-compatible input logic paths controlling separate high-side (DRVH) and low-side (DRVL) N-MOSFET drivers, each featuring matched propagation delay (<5ns) and fast edge rates (7.2ns rise / 5.5ns fall into 1nF). Its floating high-side driver uses bootstrap supply (VBST up to 120V) with on-chip diode, eliminating external diode requirement.

UVLO protection is implemented separately for VDD (4.1–4.9V falling threshold) and BST–SW (3.2–4.6V falling), forcing both outputs low during undervoltage conditions. Thermal shutdown activates at 165°C with 25°C hysteresis, and the SOIC-8 package provides 96°C/W junction-to-ambient thermal resistance on standard PCBs.

Key Specifications

Pinout & Package

MP1923GS-P is housed in an industry-standard SOIC-8 package (4.9mm × 3.9mm × 1.5mm), with exposed pad on backside connected internally to VSS for enhanced thermal performance. Pin 1 is marked by notch or dot; pin numbering follows standard SOIC convention (counterclockwise from notch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2004SPBF and LM5109BMAX/NOPB, MP1923GS-P delivers superior high-frequency performance (20ns delay vs. 50–200ns), integrated BST diode (reducing BOM), and tighter channel matching (<5ns vs. >10ns), making it optimal for compact, high-efficiency 100V-class half-bridge systems.

Availability

MP1923GS-P is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP1923GS-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with over two decades of innovation in DC/DC converters, gate drivers, and motor control solutions.

The MP1923 product line targets high-frequency, high-voltage half-bridge gate drive applications-specifically designed to replace discrete driver + bootstrap diode combinations in space-constrained, efficiency-critical power stages.

FAQ

What is the maximum allowable switching node (SW) voltage for MP1923GS-P?

The absolute maximum SW voltage is +100V under continuous operation, with transient rating up to +120V for durations under 2µs. This rating applies across the full operating temperature range (-40°C to +125°C) and enables use in 48V, 60V, and 100V bus systems such as telecom PSUs and motor drives.

Does MP1923GS-P require an external bootstrap diode?

No. MP1923GS-P integrates a bootstrap diode rated for 100mA forward current and 1.2V drop at 100mA, eliminating the need for an external diode. This reduces component count, PCB area, and potential failure points while maintaining full 120V BST voltage capability.

How does the UVLO protection function on the high-side driver?

The high-side UVLO monitors the BST–SW voltage difference, with rising and falling thresholds of 3.7V and 3.2V respectively. If BST–SW falls below 3.2V, the DRVH output is forced low to prevent weak or undefined high-side gate drive, ensuring safe MOSFET turn-off during bootstrap capacitor discharge.

Can MP1923GS-P drive both MOSFETs simultaneously in a two-switch forward topology?

Yes. The independent INH and INL inputs allow synchronous activation of DRVH and DRVL, enabling simultaneous turn-on required in two-switch forward converters. The device's matched timing (<5ns) and robust 8A sink current ensure clean, low-loss switching transitions even with large gate charges.

What is the thermal resistance (θ_JA) of the SOIC-8 package under standard JEDEC 4-layer board conditions?

The junction-to-ambient thermal resistance (θ_JA) for MP1923GS-P in SOIC-8 is 96°C/W when mounted on a standard 4-layer JEDEC test board per JESD51-7. This value assumes proper thermal vias connecting the exposed pad to inner ground planes, enabling reliable operation up to 1.3W continuous power dissipation.

Is MP1923GS-P compatible with 3.3V logic controllers?

No. MP1923GS-P inputs are TTL-compatible with guaranteed recognition of logic high ≥2.4V and logic low ≤0.8V. While some 3.3V controllers may meet these thresholds, the device lacks dedicated 3.3V logic-level support; a level shifter or 5V controller interface is recommended for robust operation.