Monolithic Power Systems Inc. MP1923GS-Z

Overview

MP1923GS-Z from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with 100V switching node rating, 8A sink/7A source peak output current, and <5ns propagation delay matching between high-side and low-side channels. It integrates a bootstrap diode, supports TTL-compatible inputs, and delivers 7.2ns rise time driving 1nF loads at 12V VDD - deployed in telecom half-bridge power supplies and avionics DC/DC converters.

For engineers reviewing the MP1923GS-Z datasheet, MP1923GS-Z pinout, MP1923GS-Z application, or MP1923GS-Z equivalent, key selection criteria include its 100V SW voltage rating, independent INH/INL control logic, SOIC-8 package thermal resistance (θJA = 96°C/W), and dual UVLO thresholds (4.5V falling for VDD, 3.2V falling for BST–SW).

Technical Context

The MP1923GS-Z implements two independent gate drivers: a floating high-side channel referenced to the SW node and a grounded low-side channel referenced to VSS, both featuring matched propagation delays (<5ns) and integrated UVLO protection on VDD and BST–SW rails. Its bootstrap architecture enables high-side drive without external high-voltage level shifters.

It operates across 5V–17V VDD and supports up to 100V SW voltage in half-bridge topologies, with dead-time management enforced via separate INH and INL inputs. The integrated bootstrap diode reduces external component count while maintaining 120V BST voltage capability and <300µA quiescent current.

Key Specifications

Pinout & Package

MP1923GS-Z is housed in an industry-standard SOIC-8 package (4.9mm × 3.9mm × 1.5mm), with exposed pad connected internally to VSS for enhanced thermal performance. The package supports JEDEC MS-012, variation AA, and has θ_JA = 96°C/W on a 4-layer PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMAX/NOPB, MP1923GS-Z offers superior high-frequency performance (7.2ns rise time), tighter timing matching (<5ns), and reduced system-level BOM count via integrated bootstrap diode - making it optimal for compact, high-efficiency 100W–500W half-bridge designs.

Availability

MP1923GS-Z is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for MP1923GS-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with over two decades of expertise in DC/DC conversion, gate drivers, and motor control solutions.

The MP1923 product line targets high-frequency, high-efficiency half-bridge applications in telecom, industrial, and aerospace power systems - emphasizing integration, timing precision, and ruggedized operation across extended temperature ranges.

FAQ

What is the maximum allowable SW node voltage for MP1923GS-Z?

The MP1923GS-Z supports a continuous SW node voltage of –1V to +100V, with transient capability up to +120V for durations under 2µs. This rating is validated per Absolute Maximum Ratings table and enables use in 48V and 54V telecom systems with margin for ringing and overshoot.

Does MP1923GS-Z require an external bootstrap diode?

No. MP1923GS-Z integrates a bootstrap diode rated for 120V reverse voltage and 100mA forward current. The diode connects internally between VDD and BST, eliminating the need for an external component and simplifying layout in SOIC-8 constrained designs.

How does the UVLO protection function on the BST rail?

The BST–SW UVLO triggers when the bootstrap voltage falls below 3.2V (typical falling threshold). When activated, it forces DRVH low to prevent partial turn-on of the high-side MOSFET, avoiding shoot-through and ensuring safe shutdown during bootstrap capacitor discharge.

Can MP1923GS-Z drive both MOSFETs simultaneously in a two-switch forward topology?

Yes. The independent INH and INL inputs allow synchronous activation of DRVH and DRVL, enabling simultaneous HS/LS switching required in two-switch forward converters. The device's matched delay and low propagation skew ensure balanced gate drive timing.

What thermal derating applies to MP1923GS-Z in SOIC-8 package?

In SOIC-8, MP1923GS-Z has θ_JA = 96°C/W. At 25°C ambient, maximum continuous power dissipation is 1.3W. For reliable operation above 85°C ambient, derate linearly to zero at 125°C junction temperature, using the formula P_D(MAX) = (125 – T_A) / 96.

Is the exposed pad on MP1923GS-Z electrically connected?

Yes. The exposed pad is internally connected to VSS and must be soldered to a solid ground plane using multiple thermal vias. This connection is mandatory for achieving specified θ_JA = 96°C/W and preventing thermal shutdown during sustained 8A peak output current.