Monolithic Power Systems Inc. MP1924AHR-LF-Z

Overview

MP1924AHR-LF-Z from Monolithic Power Systems is a high-frequency, half-bridge N-channel MOSFET gate driver with independent high-side and low-side control, 100V SW voltage rating, 4A peak source/sink current per channel, <5ns inter-channel propagation delay matching, and integrated bootstrap diode - deployed in telecom DC/DC converters and motor drivers requiring precise timing and shoot-through prevention.

For engineers reviewing the MP1924AHR-LF-Z datasheet, MP1924AHR-LF-Z pinout, MP1924AHR-LF-Z application, or MP1924AHR-LF-Z equivalent, key selection criteria include bootstrap voltage range (115V), UVLO thresholds (6.8V VDD / 6.5V BST-SW), TTL-compatible inputs, 20ns propagation delay, and QFN-10 thermal performance (θJA = 47°C/W).

Technical Context

The MP1924AHR-LF-Z implements dual independent gate drivers: a floating high-side channel referenced to SW and a grounded low-side channel referenced to VSS, both featuring under-voltage lockout with separate 6.8V (VDD) and 6.5V (BST–SW) rising thresholds and 0.5V hysteresis. Its internal bootstrap diode enables self-biased high-side operation without external discrete diodes.

Timing control relies on matched propagation paths (<5ns skew between DRVH and DRVL edges), 50ns minimum input pulse width guarantee, and 10ns bootstrap diode switching time - enabling reliable operation at >1MHz switching frequencies in hard-switched topologies like two-switch forward and active clamp forward converters.

Key Specifications

Pinout & Package

MP1924AHR-LF-Z is packaged in a thermally enhanced QFN-10 (4mm × 4mm) with exposed thermal pad, supporting 2.66W continuous dissipation at T_A = 25°C (θ_JA = 47°C/W). The exposed pad must be soldered to PCB ground for optimal thermal and EMI performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMAX, MP1924AHR-LF-Z delivers superior high-frequency capability (20ns delay), integrated bootstrap diode (reducing component count), and matched channel timing (<5ns skew) - making it optimal for compact, high-efficiency 100V-class power stages where layout area and timing precision are critical.

Availability

MP1924AHR-LF-Z is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, RoHS-compliant packaging, and QFN-10 thermal performance.

Supply support for MP1924AHR-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, including DC/DC converters, LED drivers, motor drivers, and gate drivers - headquartered in Kirkland, WA, with global design and support centers.

The MP1924A product line targets high-frequency, high-reliability half-bridge gate drive applications in telecom infrastructure, industrial automation, and aerospace power systems - emphasizing timing precision, integrated features, and robust operation under fast dv/dt conditions.

FAQ

What is the maximum allowable negative voltage on the SW pin?

The SW pin tolerates –1.0V continuously and –25V for transients under 100ns, as specified in Absolute Maximum Ratings. This negative swing margin accommodates inductive kickback during hard commutation and ensures robustness in flyback or resonant topologies where SW node undershoot occurs.

Does MP1924AHR-LF-Z require an external bootstrap diode?

No. The MP1924AHR-LF-Z integrates a bootstrap diode with 0.95V forward voltage at 100mA, eliminating the need for an external Schottky diode. This reduces bill-of-materials count, PCB area, and potential failure points in high-density power layouts.

How is shoot-through prevented in MP1924AHR-LF-Z designs?

Shoot-through is prevented through independent INH/INL control enabling programmable dead time, <5ns inter-channel timing matching to minimize overlap uncertainty, and dual UVLO that forces both outputs low if either VDD or BST–SW falls below threshold - ensuring fail-safe gate drive disable.

What is the thermal resistance of the QFN-10 package?

The QFN-10 (4mm × 4mm) package has θ_JA = 47°C/W and θ_JC = 7°C/W when mounted on a standard 4-layer JEDEC test board (JESD51-7). Effective thermal performance requires soldering the exposed pad to a minimum 100mm² copper pour connected to internal ground planes.

Can MP1924AHR-LF-Z drive GaN HEMTs?

Yes - its 20ns propagation delay, 4A peak output current, 15ns edge speeds into 2.2nF, and 50V/ns dv/dt immunity make it suitable for driving enhancement-mode GaN HEMTs in hard-switched topologies, provided gate resistors are selected to limit dV_GS/dt within device specifications.

What is the minimum input pulse width supported?

The MP1924AHR-LF-Z guarantees proper output response to input pulses as short as 50ns, as stated in Electrical Characteristics. This enables use with high-resolution PWM controllers and digital signal processors generating narrow gate drive enable signals.

Is there a recommended PCB layout for the BST capacitor?

Yes - the BST capacitor must be placed as close as possible between BST (Pin 2) and SW (Pin 4), with short, wide traces and direct connection to the SW node's power loop. A 0.1µF X7R ceramic capacitor rated for ≥16V is recommended, and the SW node trace should avoid routing under or near sensitive analog signals.