Monolithic Power Systems Inc. MP1924AHS-LF-Z

Overview

MP1924AHS-LF-Z from Monolithic Power Systems is a high-frequency, half-bridge N-channel MOSFET gate driver with independent high-side and low-side control, 100V SW voltage rating, <5ns driver matching, and integrated bootstrap diode. It delivers 4.5A sink / 5.1A source current at 12V VDD and drives 2.2nF loads with 15ns rise/fall times-optimized for telecom DC/DC converters and motor drivers operating up to 125°C junction temperature.

For engineers reviewing the MP1924AHS-LF-Z datasheet, MP1924AHS-LF-Z pinout, MP1924AHS-LF-Z application, or MP1924AHS-LF-Z equivalent, key selection criteria include bootstrap voltage range (115V), UVLO thresholds (6.8V VDD, 6.5V BST–SW), propagation delay (20ns), thermal resistance (96°C/W θJA in SOIC-8), and SOIC-8 package compatibility with legacy PCB layouts.

Technical Context

The MP1924AHS-LF-Z implements dual-channel, non-overlapping gate drive logic with separate INH and INL inputs enabling precise dead-time control to prevent shoot-through in half-bridge topologies. Its floating high-side driver uses bootstrap biasing with on-chip diode and supports up to 100V switching node voltage swing.

UVLO protection is independently applied to both VDD and BST–SW rails, forcing DRVH and DRVL low when either supply falls below threshold (6.8V ±0.4V for VDD; 6.5V ±0.4V for BST–SW). Propagation delays are matched within 5ns between channels, and timing parameters-including TMON and TMOFF-are guaranteed by design for synchronous switching integrity.

Key Specifications

Pinout & Package

MP1924AHS-LF-Z is housed in an SOIC-8 package (5.0mm × 4.0mm, 1.27mm pitch) with exposed pad omitted (non-EP variant), optimized for thermal performance up to 1.3W dissipation at 25°C ambient. Pin 1 is marked with a notch or dot; the exposed thermal pad is absent per SOIC-8 mechanical specification (JEDEC MS-012, variation AA).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPbF and LM5109BMAX/NOPB, MP1924AHS-LF-Z uniquely combines 100V SW rating, integrated bootstrap diode, <5ns matching, and 4.5A drive in SOIC-8-making it optimal for space-constrained, high-reliability 48V–100V telecom and avionics power stages.

Availability

MP1924AHS-LF-Z is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, avionics DC/DC converters, and two-switch forward converters requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for MP1924AHS-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, including DC/DC converters, LED drivers, and gate drivers, with global manufacturing and quality certifications.

The MP1924A product line delivers high-frequency, high-voltage half-bridge gate drivers targeting compact, efficient power conversion in telecom, industrial, and aerospace applications where reliability and timing precision are critical.

FAQ

What is the maximum allowable negative voltage at the SW pin?

The SW pin tolerates −5V for durations under 100ns and −1.0V continuously per recommended operating conditions. This transient rating accommodates inductive kickback during hard-switching transitions in high-dV/dt environments such as motor drives and telecom power supplies.

Does MP1924AHS-LF-Z require an external bootstrap diode?

No. The MP1924AHS-LF-Z integrates a bootstrap diode with VF = 0.5V at 100µA and 0.95V at 100mA. This eliminates the need for an external diode, reducing bill-of-materials count and PCB area-confirmed in the device's FEATURES section and Electrical Characteristics table.

What is the thermal resistance (θJA) for the SOIC-8 package?

The junction-to-ambient thermal resistance (θJA) for MP1924AHS-LF-Z in SOIC-8 is 96°C/W, measured per JESD51-7 on a 4-layer PCB. This value defines the maximum power dissipation (1.3W at 25°C ambient) before thermal shutdown activates at 150°C junction temperature.

How does the UVLO function on the BST–SW rail?

The BST–SW UVLO triggers at 6.5V (rising) with 0.5V hysteresis, forcing DRVH low when bootstrap voltage collapses. This prevents high-side MOSFET misfiring during startup or overload, ensuring safe operation in half-bridge configurations where bootstrap capacitor recharge depends on switching activity.

Can MP1924AHS-LF-Z drive GaN FETs?

Yes-its 15ns rise/fall times, 20ns propagation delay, and 4.5A sink/5.1A source capability meet typical gate drive requirements for 100V-class GaN HEMTs. However, layout parasitics and gate resistance must be minimized to preserve edge speed and avoid ringing, as confirmed in MPS application notes for GaN half-bridge designs.

What is the minimum input pulse width supported?

The minimum input pulse width that reliably changes the output is 50ns, guaranteed by design. This allows stable operation at switching frequencies up to 10MHz in burst-mode or digital control schemes where narrow gate pulses are used for fine-grained regulation.

Is there a version with exposed thermal pad in SOIC-8?

No-MP1924AHS-LF-Z uses standard SOIC-8 (JEDEC MS-012, variation AA) without exposed pad. The EP variant is MP1924AHN-LF-Z in SOIC-8E (variation BA), which features an exposed pad and lower θJA of 29.8°C/W for higher power density applications.