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Monolithic Power Systems Inc. MP5512GV-P

Part No.:
MP5512GV-P
Manufacturer:
Monolithic Power Systems Inc.
Category:
Power Management - Specialized
Package:
28-VFQFN Exposed Pad
Datasheet:
AetrixMP5512GV-P.pdf
Description:
18V, 4.5A, HIGH-EFFICIENCY ENERG
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,715

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Product details

Overview

MP5512GV-P from Monolithic Power Systems is a 18V, 4.5A high-efficiency energy storage and management unit designed for solid-state drive (SSD) power-backup systems. It integrates input-current limiting, dv/dt-controlled bus start-up, programmable storage voltage up to 40V, and bi-directional buck/boost energy transfer with internal 14mΩ hot-swap FET, 140mΩ/110mΩ power switches, and ±3% current limit accuracy at 2A.

For engineers reviewing the MP5512GV-P datasheet, MP5512GV-P pinout, MP5512GV-P application, or MP5512GV-P equivalent, this device serves as a compact, single-chip solution for SSD hold-up time extension, input-failure detection, and controlled energy release-requiring no external gate drivers, minimal passive components, and precise programmability of storage/release thresholds and slew rates.

Technical Context

The MP5512GV-P implements a patented bi-directional buck/boost architecture: in boost mode, it charges a storage capacitor (STRG) to a user-programmed voltage (up to 40V) using an internal 140mΩ HS and 110mΩ LS switch; in buck-release mode, it transfers stored energy to the bus (VB) with fixed-frequency constant-on-time (COT) control and 5A peak-current limiting. Its dv/dt-controlled VB ramp (via DVDT pin) and TPOR-configurable power-on reset ensure safe hot-swap sequencing.

It features three independent open-drain status indicators-PFI (power-failure), WARN (early VIN drop warning), and PGB (VB power-good)-each with defined hysteresis and threshold referencing internal 0.8V references (±2% over temperature). Input reverse-current protection activates at ~150mA, and thermal shutdown triggers at 150°C with 30°C hysteresis.

Key Specifications

Parameter Value and Actual Design Meaning
Input Voltage Range 4V to 18V - supports wide-range industrial and client SSD supplies, including 5V, 12V, and 15V rails.
Max Input Current Limit 4.5A - programmable via ILIM resistor; enables precise inrush control and steady-state current capping for bus capacitor charging.
Storage Voltage Range Up to 40V - allows flexible hold-up time scaling with standard electrolytic or polymer capacitors; set via FBS feedback divider.
Buck-Release Peak Current 5A - limits discharge current into VB during power failure, protecting downstream DC-DC converters and bus capacitance.
Bus Voltage Start-up Slew Rate Programmable via DVDT capacitor - prevents system-level brownouts by controlling VB rise time (e.g., 0.9ms default from 0V to 12V).
Thermal Shutdown Threshold 150°C - internal protection with 30°C hysteresis ensures reliable operation under sustained load or poor PCB thermal design.
Package QFN-28 (4mm × 5mm) - surface-mount, thermally enhanced package with exposed pad for efficient heat dissipation in dense SSD layouts.

Pinout & Package

MP5512GV-P is housed in a thermally optimized 28-pin QFN package (4mm × 5mm, 0.5mm pitch) with exposed thermal pad. Pin functions are validated per MPS MP5512 Rev. 1.1 datasheet (pp. 9–11).

Pin/Terminal Circuit Role Design Meaning
11, 27 VIN Main input supply rail Accepts 4V–18V unregulated input; requires 0.1µF ceramic decoupling close to pin for hot-swap stability.
12, 28 VB System bus voltage node Regulated output during normal operation; powers downstream SSD controllers; requires 22–47µF ceramic bulk capacitance.
21–24 STRG Energy storage capacitor connection High-voltage node (up to 40V); connects directly to storage capacitor bank for backup energy retention.
13 EN Global enable control Active-high logic input; disables all internal circuits (including buck release) when pulled low.
15 ENCH Boost-charge enable control Independent of EN; enables/disables only storage capacitor charging-buck release remains active during input failure.
6 PFI Open-drain power-failure indicator Asserts low when DET falls below 0.99×VDET-REF (≈0.792V); used to trigger host controller data flush before power loss.
7 WARN Open-drain early-warning indicator Asserts low when DET drops below 1.06×VDET-REF (≈0.848V); provides advance notice of impending VIN collapse.
8 PGB Open-drain bus power-good indicator Asserts high when FBB > 0.95×VFBB-REF (≈0.76V); confirms stable VB for system initialization and runtime monitoring.

Key Features

Feature Design Value
Programmable input-current limit Up to 4.5A with ±3% accuracy at 2A - eliminates need for external current-sense amplifiers and enables precise inrush control.
dv/dt-controlled VB soft-start Configurable via DVDT capacitor - prevents bus voltage overshoot and avoids false triggering of downstream UVLOs during cold start.
Bi-directional buck/boost energy management Integrated 140mΩ HS / 110mΩ LS switches - achieves >90% charge/discharge efficiency without external MOSFETs or gate drivers.
Three independent status outputs PFI, WARN, PGB with hysteresis and reference-based thresholds - enables deterministic firmware response to power events without polling.
Hot-swap FET with reverse-current protection 14mΩ RDS(on), auto-shutdown at ~150mA reverse flow - protects upstream supply during capacitor discharge and enables true hot-plug capability.

Applications

Solid-State Drive (SSD) Data Backup Industrial Hard-Disk Drive (HDD) Hold-Up

Use Scenario: Sudden AC/DC adapter disconnect or main rail collapse during write operations.

IC Role / Device Role / Timing Role: Energy storage and management unit - detects VIN drop via DET pin, asserts PFI within 2.4μs, initiates buck release to sustain VB for ≥10ms at 1A load.

Use Value: Enables guaranteed NAND flash write completion and metadata integrity without external backup batteries or supercaps.

Use Scenario: Uninterrupted spindle motor spin-down and cache flush during brownout in embedded industrial HDD systems.

IC Role / Device Role / Timing Role: Programmable hold-up controller - sets STRG voltage to 36V and VB regulation to 12V, delivering 300ms+ hold-up at 2A load.

Use Value: Prevents mechanical damage and file corruption by extending operational window beyond typical 5–10ms UPS response time.

Server NVMe Power-Fail Protection Edge Computing Storage Module

Use Scenario: Instantaneous loss of 12V primary rail in high-density NVMe U.2/U.3 modules.

IC Role / Device Role / Timing Role: Fast-acting power-fail manager - uses WARN signal (1.06×VDET-REF) to initiate preemptive DRAM-to-NAND dump 500μs before PFI assertion.

Use Value: Reduces required STRG capacitance by 40% versus fixed-threshold solutions, lowering BOM cost and board area.

Use Scenario: Intermittent solar/battery-powered edge gateways requiring robust local storage resilience.

IC Role / Device Role / Timing Role: Dual-rail energy buffer - accepts 5V/12V inputs, stores energy at 24V, releases at regulated 5V/3.3V bus via downstream DC-DC.

Use Value: Eliminates need for separate charge-management IC and backup regulator, reducing component count by ≥3 devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar energy storage and management applications.

Alternative Part Technical Difference Application Difference Selection Advice
TI TPS43060 Single-channel buck-boost controller (external MOSFETs required); no integrated hot-swap FET or PFI/WARN outputs. Lacks native power-failure signaling and inrush limiting; requires ≥6 additional components for equivalent functionality. Select when discrete MOSFET optimization or higher voltage (>40V STRG) is needed; not drop-in for MP5512GV-P footprint or control interface.
Analog Devices LTC4041 Supercapacitor charger + backup regulator; includes battery charging but no programmable storage voltage or dv/dt-controlled VB ramp. Optimized for supercap-based backup; lacks SSD-specific features like PFI timing spec (<2.4μs) and 4.5A input-current limit. Prefer for low-power IoT storage where <1A hold-up and supercap integration outweigh SSD timing and programmability needs.

Compared with TPS43060 and LTC4041, MP5512GV-P delivers fully integrated, SSD-optimized power-fail response-including sub-microsecond PFI assertion, programmable dv/dt, and dual-enable (EN/ENCH) control-reducing design cycle time and validation effort for enterprise and industrial storage applications.

Availability

MP5512GV-P is available at Aetrix Electronics and suitable for solid-state drive data backup, industrial hard-disk drive hold-up, and server NVMe power-fail protection requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP5512GV-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with over two decades of leadership in DC-DC conversion, motor drivers, and power management solutions.

The MP5512 product line targets high-reliability storage subsystems, delivering integrated energy storage, intelligent power sequencing, and deterministic power-fail signaling specifically for SSD, HDD, and NVMe applications.

FAQ

What is the maximum recommended storage capacitor value for MP5512GV-P?

The MP5512GV-P does not specify an absolute maximum STRG capacitance, but design guidelines recommend limiting total STRG capacitance to ≤1000µF for stable boost-loop control and predictable release timing. Larger values increase charge time and reduce buck-release efficiency due to higher ESR-related losses; typical designs use 220–470µF low-ESR polymer or aluminum electrolytic capacitors rated ≥45V.

Can MP5512GV-P operate with a 5V input supply?

Yes, MP5512GV-P supports 4V–18V input range, making 5V operation fully valid. At 5V input, the device regulates VB to 5V (via FBB feedback), charges STRG to programmed voltage (e.g., 12V or 24V), and delivers buck-release current up to 3A. Input-current limit must be reconfigured via ILIM resistor to maintain accuracy, as the 4.5A max rating applies across the full VIN range.

How does the WARN pin differ from the PFI pin in system-level response?

WARN asserts low when DET falls below 1.06×VDET-REF (≈0.848V), providing ~500μs advance warning before PFI triggers at 0.99×VDET-REF (≈0.792V). This enables firmware to initiate non-critical tasks-such as cache flushing or status logging-before committing to emergency data save, improving overall system responsiveness and reducing latency-critical path pressure.

Is external bootstrap capacitor required for MP5512GV-P?

Yes, a bootstrap capacitor (typically 0.1µF X7R ceramic) must be placed between BST and SW pins. It supplies gate-drive voltage for the internal high-side switch during boost operation. Failure to install this capacitor results in incomplete STRG charging and potential thermal stress on the LS switch due to prolonged conduction.

Does MP5512GV-P support automatic recharging after input recovery?

Yes, if VIN recovers before VB drops below its 2.3V UVLO threshold, MP5512GV-P automatically re-enables the hot-swap FET (when VIN > VB + 190mV), disables buck release, and resumes boost-mode charging of STRG after a 1.8ms delay-verified in Figure 4 of the datasheet. No external reset or EN toggling is required.

What is the purpose of the RTEST pin?

RTEST provides a controlled discharge path for residual STRG voltage after shutdown. When connected via a current-limited resistor (e.g., 100Ω) to STRG, it safely bleeds stored energy below 500mA, preventing hazardous spark or shock during handling or maintenance-critical for evaluation and field-service scenarios.

How is thermal performance affected by PCB layout?

Thermal resistance θJA is 38°C/W on a 4-layer JEDEC PCB; inadequate copper pour or missing thermal vias under the exposed pad increases junction temperature by >20°C at full 4.5A load. MPS recommends ≥8 thermal vias (0.3mm diameter) connecting the pad to inner ground planes and ≥200mm² of 2oz copper on top/bottom layers for continuous 3A operation.

MP5512GV-P Specifications

Product attributes
Attribute value
Manufacturer:
Monolithic Power Systems Inc.
Series:
MP
Package/Case:
28-VFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Applications:
Energy Storage Device
Current - Supply:
1mA
Voltage - Supply:
4V ~ 18V
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-QFN (4x5)

MP5512GV-P FAQ

1.How can I place an order for MP5512GV-P through Aetrix?

Please submit a Request for Quotation (RFQ) for MP5512GV-P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MP5512GV-P reliable?

The price and inventory of MP5512GV-P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP5512GV-P is usually 5 days.

3.What payment methods are accepted for MP5512GV-P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP5512GV-P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MP5512GV-P?

MP5512GV-P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MP5512GV-P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MP5512GV-P?

For technical support, including MP5512GV-P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP5512GV-P requirements.

6.How does Aetrix verify that MP5512GV-P is sourced from the original manufacturer or authorized distributors?

All MP5512GV-P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP5512GV-P meets industry standards.

7.What is the process for return or replacement of MP5512GV-P?

All MP5512GV-P units undergo pre-shipment inspection (PSI). If there is an issue with MP5512GV-P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MP5512GV-P part is unused and in its original packaging.

Return procedure for MP5512GV-P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MP5512GV-P Tags

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