Monolithic Power Systems Inc. MPQ18021HS-A-LF-P

Overview

MPQ18021HS-A-LF-P from Monolithic Power Systems is a high-frequency, 100V half-bridge N-channel MOSFET gate driver in SOIC8 package, featuring independent high-side and low-side control with <5ns propagation matching, 16ns typical propagation delay, and integrated bootstrap diode. It drives 1nF loads with 12ns/9ns rise/fall times at 12V VDD and supports telecom half-bridge power supplies up to 100V input.

For engineers reviewing the MPQ18021HS-A-LF-P datasheet, MPQ18021HS-A-LF-P pinout, MPQ18021HS-A-LF-P application, or MPQ18021HS-A-LF-P equivalent, key selection criteria include bootstrap voltage range (115V), UVLO thresholds (7.4V/6.5V), TTL-compatible inputs, quiescent current (<150μA), and SOIC8 thermal resistance (θJA = 90°C/W).

Technical Context

The MPQ18021HS-A-LF-P implements a level-shifted floating driver architecture for high-side operation, with separate under-voltage lockout (UVLO) on both VDD and BST-SW rails-triggering at 7.4V (VDD) and 6.5V (BST-SW) with 0.5V/0.55V hysteresis. Its dual-channel timing is matched to within 5ns, enabling precise dead-time control in hard-switched topologies.

It integrates a bootstrap diode (VF = 0.5V @ 100µA, 0.9V @ 100mA, RD = 2.5Ω) and supports switching frequencies up to 500kHz with 2.8–3.5mA VDD operating current. The device operates across –40°C to +125°C junction temperature and tolerates SW slew rates <50V/ns.

Key Specifications

Pinout & Package

MPQ18021HS-A-LF-P is housed in a standard SOIC8 package (JEDEC MS-012), with exposed pad not present and thermal resistance θJA = 90°C/W on 4-layer PCB per JESD51-7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPbF and UCC27211D, MPQ18021HS-A-LF-P uniquely combines integrated bootstrap diode, sub-5ns channel matching, and dual UVLO in SOIC8-reducing design complexity and component count specifically for 100V telecom and avionics half-bridge converters.

Availability

MPQ18021HS-A-LF-P is available at Aetrix Electronics and suitable for telecom half-bridge power supplies, avionics DC-DC converters, and two-switch forward converters requiring stable component supply, RoHS-compliant packaging, and automotive-grade reliability screening.

Supply support for MPQ18021HS-A-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MPQ18021 series belongs to MPS's high-frequency gate driver product line, engineered for efficiency-critical, high-density power conversion in telecom infrastructure, aerospace, and industrial systems operating up to 100V.

FAQ

What is the maximum allowable SW node slew rate for reliable operation?

The MPQ18021HS-A-LF-P specifies a maximum SW slew rate of <50V/ns in its Recommended Operating Conditions. Exceeding this may cause false triggering of internal level shifters or premature UVLO activation due to capacitive coupling. Layout best practices-short SW traces, minimized loop area, and proper grounding-are essential to maintain this limit in 100V systems.

Does the integrated bootstrap diode support continuous 500kHz operation?

Yes-the integrated diode is characterized for 100µA to 100mA operation with VF = 0.5V (100µA) and 0.9V (100mA), and dynamic resistance of 2.5Ω. At 500kHz with typical 0.1µF bootstrap capacitor, conduction time per cycle is ~100ns, well within safe thermal limits. No derating is required for continuous 500kHz use in properly designed layouts.

How does the dual UVLO function during startup with slow-rising VDD and BST?

VDD UVLO triggers at 7.4V (rising) with 0.5V hysteresis; BST-SW UVLO activates at 6.5V (rising) with 0.55V hysteresis. During startup, outputs remain low until both thresholds are met. If BST charges slowly, high-side output stays disabled even after VDD exceeds threshold-preventing partial drive and shoot-through.

Can INH and INL be driven by the same PWM signal without external dead-time insertion?

No-driving both inputs identically causes simultaneous high-side and low-side conduction, resulting in shoot-through. The datasheet explicitly requires externally controlled dead time between INH and INL transitions. Minimum pulse width is 50ns, and Figure 3 shows recommended dead-time implementation using controller-level delay or dedicated dead-time ICs.

What is the thermal performance limitation in SOIC8 at full 2.5A peak drive?

In SOIC8, θJA = 90°C/W. At 500kHz with 3.5mA total supply current and 2.5A peak gate drive into 1nF, typical power dissipation is ~180mW. This yields ~16°C junction-to-ambient rise-well below the 125°C max TJ. Derating begins above 100°C ambient only when combined with high PCB copper loss or poor airflow.

Is the MPQ18021HS-A-LF-P qualified for automotive AEC-Q100?

No-the MPQ18021HS-A-LF-P is not AEC-Q100 qualified. It is specified for industrial and telecom applications (–40°C to +125°C TJ) and carries RoHS-compliant "LF" marking, but lacks automotive stress testing, failure analysis reporting, or PPAP documentation. For automotive use, consult MPS's MPQ18021A-Q variant.

What is the minimum bootstrap capacitor value for stable 100V operation at 500kHz?

A 0.1µF X7R ceramic capacitor rated ≥16V is recommended. At 500kHz, charge loss per cycle is ~10nC (calculated from gate charge and frequency). With the integrated diode's 2.5Ω dynamic resistance and 100mA peak charging current, 0.1µF maintains <1V ripple on BST-ensuring robust high-side drive margin across temperature and aging.