Monolithic Power Systems Inc. MPQ18024HN-AEC1-LF-P

Overview

MPQ18024HN-AEC1-LF-P from Monolithic Power Systems is a 100V, 4A, AEC-Q100 Grade 1 qualified half-bridge gate driver for N-channel MOSFETs, featuring independent high-side and low-side control with <5ns propagation delay matching, integrated bootstrap diode, and TTL-compatible inputs. It operates across -40°C to +125°C and drives 2.2nF loads with 15ns rise/12ns fall times at 12V VDD - used in automotive DC/DC converters and half-bridge motor drivers.

For engineers reviewing the MPQ18024HN-AEC1-LF-P datasheet, MPQ18024HN-AEC1-LF-P pinout, MPQ18024HN-AEC1-LF-P application, or MPQ18024HN-AEC1-LF-P equivalent, key selection criteria include 100V BST voltage range, dual UVLO thresholds (8.5V VDD / 7.4V BST–SW), SOIC-8E thermal performance (θJA = 50°C/W), and AEC-Q100 qualification for automotive power systems.

Technical Context

The MPQ18024HN-AEC1-LF-P implements a level-shifted floating driver architecture with independent INH/INL inputs enabling precise dead-time control to prevent shoot-through. Its internal bootstrap diode eliminates external diode requirements while supporting up to 100V switching node voltage (VSW) and 110V BST–SW differential rating.

UVLO protection is implemented separately on VDD and BST–SW rails with 0.5V and 0.55V hysteresis respectively, forcing DRVH and DRVL low during undervoltage conditions. Propagation delays are tightly matched (<5ns) between high-side and low-side paths, critical for high-frequency (>500kHz) synchronous rectification and motor phase control.

Key Specifications

Pinout & Package

MPQ18024HN-AEC1-LF-P is housed in an SOIC-8 exposed pad (SOIC-8E) package with thermal pad connected to VSS for enhanced heat dissipation. The exposed pad must be soldered to a PCB copper area tied to VSS for proper thermal operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with LM5109BMAX/NOPB and UCC27211DRCR, MPQ18024HN-AEC1-LF-P uniquely combines AEC-Q100 Grade 1 qualification, integrated bootstrap diode, and <5ns channel matching - making it the only option qualified for safety-critical automotive power stages without external component trade-offs.

Availability

MPQ18024HN-AEC1-LF-P is available at Aetrix Electronics and suitable for automotive DC/DC converters, half-bridge motor drivers, and electric power steering systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for MPQ18024HN-AEC1-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MPQ18024 belongs to MPS's automotive-qualified gate driver product line, engineered specifically for high-reliability, high-frequency power conversion in 12V–48V automotive subsystems including ADAS, EPS, and electrified powertrains.

FAQ

What is the maximum allowable switching node (SW) voltage for MPQ18024HN-AEC1-LF-P?

The absolute maximum SW voltage is 110V relative to VSS, with recommended operating limit of 100V. This rating enables use in 48V automotive systems subjected to load-dump transients up to 100V, provided the BST–SW differential remains within its 110V limit and slew rate stays below 50V/ns.

How does the integrated bootstrap diode affect PCB layout compared to discrete solutions?

The on-chip bootstrap diode eliminates the need for an external Schottky diode and associated routing, reducing loop inductance and layout complexity. It supports 100μA to 100mA operation with 0.5V forward drop at light load and 0.95V at full current - maintaining bootstrap capacitor voltage stability across wide duty-cycle ranges.

Can MPQ18024HN-AEC1-LF-P drive both high-side and low-side MOSFETs simultaneously without shoot-through risk?

No - simultaneous INH and INL high states are prohibited. The device requires externally controlled dead time between INH and INL transitions. Its <5ns propagation matching ensures minimal timing uncertainty, but shoot-through prevention relies on MCU or PWM controller-level dead-time insertion per Figure 2 in the datasheet.

What thermal derating applies when operating at 125°C ambient temperature?

At T_A = 125°C, maximum continuous power dissipation drops to 1.25W (calculated as (150°C − 125°C) / 50°C/W). To sustain full 4A peak gate drive, reduce switching frequency or add copper pour under the exposed pad to improve θ_JA below 50°C/W via thermal vias and inner-layer planes.

Is the SOIC-8E package RoHS and halogen-free compliant?

Yes - MPQ18024HN-AEC1-LF-P is fully lead-free, halogen-free, and complies with the EU RoHS Directive. The "LF" suffix explicitly denotes lead-free finish, and all MPS products meet JESD22-A112 moisture sensitivity level 3 (MSL-3) requirements for standard SMT assembly.

Does the device support 3.3V logic interface directly?

No - INH and INL inputs require minimum 2.2V for logic high and maximum 1.5V for logic low, making them incompatible with 3.3V CMOS logic without level translation. They are optimized for 5V or automotive 12V-compatible controllers with TTL output stages.

What failure protection mechanisms are built into MPQ18024HN-AEC1-LF-P?

The device includes dual UVLO (on VDD and BST–SW), thermal shutdown at 170°C with 25°C hysteresis, and ESD protection rated Class C6 (CDM) and Class H1C/H2 (HBM) per AEC-Q100. No overcurrent or short-circuit latch-off is implemented - external current sensing or controller-level fault handling is required.