Monolithic Power Systems Inc. MPQ1922GVE-AEC1-P

Overview

MPQ1922GVE-AEC1-P from Monolithic Power Systems is a 100V, single-channel half-bridge pre-driver IC for automotive motor control, featuring 3A source/4A sink gate drive, integrated current-sense amplifier, AEC-Q100 Grade 1 qualification, and internal charge pump with auto-refresh for high-side operation up to 100% duty cycle in BLDC/PMSM drives.

For engineers reviewing the MPQ1922GVE-AEC1-P datasheet, MPQ1922GVE-AEC1-P pinout, MPQ1922GVE-AEC1-P application in motor drivers, or MPQ1922GVE-AEC1-P equivalent for AEC-Q100-compliant half-bridge pre-drive solutions, this page delivers verified functional architecture, thermal shutdown behavior, slew-rate programmability, desaturation protection thresholds, and QFN-22 wettable flank package implementation details.

Technical Context

The MPQ1922GVE-AEC1-P implements a dual-gate-drive architecture with independent high-side (GH) and low-side (GL) outputs, using bootstrap (BST) capacitor charging via LS-FET conduction and an internal charge pump for sustained HS drive under 100% duty cycle. Its adaptive dead-time logic monitors gate voltage transitions when slew rate is configured via RSR resistor (10kΩ–100kΩ), preventing shoot-through without external timing components.

It integrates a programmable current-sense amplifier (gain = 21–210 V/V via CSG resistor), desaturation detection with temperature-stable thresholds (VDSTHL = 1.9V, VDSTHH = VG − 1.2V), and fault reporting via open-drain nFAULT with automatic latch-off on overtemperature (>190°C) or FET desaturation. UVLO triggers at 3.1V on VG and 0.65×VG on BST.

Key Specifications

Pinout & Package

MPQ1922GVE-AEC1-P uses a thermally enhanced QFN-22 (4mm × 5mm) package with wettable flanks and exposed thermal pad (Pin 12). The pinout supports full half-bridge control, current sensing, fault signaling, and programmable protection features.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge pre-driver applications.

Compared with MPQ1922GV-AEC1, the GVE variant adds wettable flanks for reliable solder-joint inspection in automotive manufacturing; compared with MPQ1922GVE-Z, the -P suffix denotes tray packaging-both share identical AEC-Q100 qualification, thermal shutdown behavior, and current-sense gain programming.

Availability

MPQ1922GVE-AEC1-P is available at Aetrix Electronics and suitable for automotive e-pump control, BLDC HVAC fan drives, EPS actuator modules, and e-bike mid-drive motor controllers requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.

Supply support for MPQ1922GVE-AEC1-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with design centers in the US, China, and Taiwan, and global distribution through authorized partners.

The MPQ1922 product line delivers AEC-Q100-qualified half-bridge pre-drivers optimized for automotive motor control, emphasizing integrated protection (desat, thermal, UVLO), programmable current sensing, and robust high-side gate drive for 48V–100V systems.

FAQ

What is the purpose of the AR pin on the MPQ1922GVE-AEC1-P?

The AR (Auto-Refresh) pin controls and reports the status of the internal bootstrap voltage refresh function. When grounded at startup, it enables automatic BST refresh cycles upon VBST UVLO detection. When pulled high, it disables auto-refresh and pulls low during BST undervoltage events to signal external intervention required-enabling flexible system-level fault recovery strategies.

How does the MPQ1922GVE-AEC1-P implement adaptive dead time?

Adaptive dead time activates only when slew rate is set via RSR ≥10kΩ. The IC monitors GH and GL output voltages in real time; it delays the next FET turn-on until the previously active gate voltage fully discharges below threshold, ensuring zero shoot-through risk without fixed timing components or MCU intervention.

Can the MPQ1922GVE-AEC1-P drive both high-side and low-side MOSFETs simultaneously?

No-the MPQ1922GVE-AEC1-P enforces strict shoot-through prevention. Its logic guarantees that INH and INL cannot simultaneously enable both FETs; Table 1 in the datasheet confirms that INH=H/INL=H results in high-impedance output. Adaptive dead time further ensures gate discharge completion before opposite-side activation.

What is the maximum recommended BST capacitor value, and why?

The BST capacitor must not exceed 1µF. Larger values delay startup due to extended charge time and may cause improper initial gate drive sequencing, risking HS-FET misfire or fault triggering. Recommended range is 100nF–1µF, using X5R/X7R ceramics rated ≥25V for stability and low ESR.

Does the current-sense amplifier support bidirectional current measurement?

Yes-by applying a reference voltage (e.g., 2.0V) to CSR, the CSO output centers at that voltage for zero current. Positive and negative current flow through the shunt produce CSO outputs above and below CSR, enabling full four-quadrant motor control including regenerative braking current monitoring.

What happens to nFAULT after a thermal shutdown event?

Upon junction temperature exceeding 190°C, nFAULT pulls low and latches in that state. Recovery requires either removal of VG supply or assertion of nSLEEP low, followed by re-enabling-no automatic reset occurs. This ensures persistent fault signaling until system-level intervention confirms thermal clearance.

Is the MPQ1922GVE-AEC1-P compatible with 3.3V logic microcontrollers?

Yes-its logic inputs (INH, INL, ENBL, nSLEEP, CSEN) accept 3.3V CMOS levels: VIH = 2.2V min and VIL = 0.8V max. Input leakage is ±20µA, and internal 350kΩ pull-downs ensure defined states even with floating MCU pins during reset.