Monolithic Power Systems Inc. MPQ1925HR-LF-Z

Overview

MPQ1925HR-LF-Z from Monolithic Power Systems is a high-frequency, N-channel MOSFET half-bridge gate driver with 100V SW voltage rating, 4A peak sink/source capability per channel, <5ns HS/LS propagation delay matching, integrated bootstrap diode, and QFN-8 (4mm×4mm) package. It drives motor inverters and telecom DC/DC converters requiring precise timing control and shoot-through prevention.

For engineers reviewing the MPQ1925HR-LF-Z datasheet, MPQ1925HR-LF-Z pinout, MPQ1925HR-LF-Z application, or MPQ1925HR-LF-Z equivalent, key selection criteria include bootstrap voltage range (up to 115V), UVLO thresholds (VDD: 7.0V rising, VBST–VSW: 6.8V rising), 15ns/10ns DRVL rise/fall times into 2.2nF, TTL-compatible inputs, and thermal performance in high-density power stages.

Technical Context

The MPQ1925HR-LF-Z implements independent high-side and low-side gate drivers with matched propagation delays (<5ns) and separate under-voltage lockout circuits for VDD and BST–SW rails. Its floating high-side driver uses bootstrap coupling with an on-chip diode, eliminating external diode requirements while supporting up to 115V BST voltage.

It operates across –40°C to +150°C junction temperature with 8V–15V VDD supply, supports 500kHz switching frequency, and delivers 4.5A sink / 4A source current at DRVL and 4.5A sink / 2.6A source at DRVH (VDD = 12V). Input logic is TTL-compatible with internal 170kΩ pull-down resistors.

Key Specifications

Pinout & Package

MPQ1925HR-LF-Z is housed in a thermally enhanced QFN-8 (4mm × 4mm) package with exposed VSS pad for PCB-level heat dissipation. The package complies with JEDEC MO-220, MSL Level 1, and supports reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with MPQ1925GR-LF-Z, the HR variant adds 25°C higher max junction temperature and AEC-Q100 qualification; versus LM5109B, it delivers tighter timing control, lower IQ, and reduced component count via integrated BST diode - making it optimal for high-density, high-reliability power stages.

Availability

MPQ1925HR-LF-Z is available at Aetrix Electronics and suitable for motor drivers, telecom half-bridge power supplies, and avionics DC/DC converters requiring stable component supply, automotive-grade reliability, and high-frequency gate drive performance.

Supply support for MPQ1925HR-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MPQ1925 belongs to MPS's automotive-qualified gate driver product line, engineered for high-efficiency, high-reliability power conversion in demanding environments including electric vehicle subsystems and aerospace power systems.

FAQ

What is the maximum allowable bootstrap voltage (V_BST) for MPQ1925HR-LF-Z?

The absolute maximum BST voltage is +115V relative to SW, with a guaranteed operating range up to 115V. Transient ratings allow –15V for <100ns. This enables use in topologies where bootstrap voltage exceeds 100V, such as active-clamp forward converters with high duty cycles.

Does MPQ1925HR-LF-Z require an external bootstrap diode?

No. The device integrates a bootstrap diode with 0.95V typical forward voltage at 100mA, eliminating the need for an external diode and reducing PCB footprint and BOM cost. The diode is rated for continuous 100mA and supports high-frequency operation up to 1MHz.

How does the dual UVLO protection work on MPQ1925HR-LF-Z?

It features independent UVLO circuits: one monitors VDD (rising threshold 7.0V, hysteresis 0.7V) and another monitors V_BST–V_SW (rising threshold 6.8V, hysteresis 0.7V). Both force DRVH and DRVL low if their respective supplies drop below threshold, preventing partial drive and MOSFET shoot-through.

What is the recommended minimum dead time when using MPQ1925HR-LF-Z?

Due to <5ns HS/LS propagation delay matching and 50ns typical propagation delay, a minimum dead time of 50ns is recommended to ensure complete turn-off before complementary turn-on. Layout-dependent parasitics may require 75–100ns in practice, verified via oscilloscope measurement of actual gate waveforms.

Can MPQ1925HR-LF-Z drive SiC or GaN MOSFETs?

Yes - its 4.5A sink/4A source capability, 15ns/10ns rise/fall times into 2.2nF, and 100V SW rating make it suitable for driving medium-power SiC and GaN devices. However, gate resistor tuning and careful layout are required to manage dV/dt-induced false triggering in wide-bandgap FETs.

Is the exposed pad (Pin 7) electrically connected to VSS?

Yes - Pin 7 is VSS and the exposed thermal pad is internally connected to VSS. It must be soldered to a solid copper ground plane using multiple thermal vias to ensure both electrical grounding and thermal dissipation; failure to do so risks thermal shutdown or parametric shift above 125°C ambient.