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Microchip Technology MSASC75H45F/TR
- Part No.:
- MSASC75H45F/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- ThinKey™4
- Datasheet:
-
MSASC75H45F/TR.pdf
- Description:
- DIODE SCHOTTKY 45V 75A THINKEY4
- Quantity:
- Payment:
- Shipping:
Inventory:2,799
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Product details
Overview
MSASC75H45F/TR from Microsemi (now Microchip) is a hermetically sealed, low-profile ceramic surface-mount Schottky diode optimized for high-current, low-voltage-drop DC-DC output rectification in telecom and industrial power supplies. It delivers 75 A average forward current at Tc ≤ 125°C, 45 V peak repetitive reverse voltage, and forward voltage as low as 575 mV at 75 A/25°C with tungsten/platinum barrier technology.
For engineers reviewing the MSASC75H45F/TR datasheet, MSASC75H45F/TR pinout, MSASC75H45F/TR application, or MSASC75H45F/TR equivalent, key selection criteria include thermal resistance (θJC = 0.50°C/W), reverse leakage at 125°C (≤300 mA @ 45 V), surge capability (500 A IFSM), and polarity configuration (standard anode-strapped).
Technical Context
This device employs an epitaxial tungsten/platinum Schottky barrier structure to minimize forward voltage while maintaining low leakage-critical for high-efficiency 48 V input–12 V output telecom rectifiers. Its oxide-passivated junction and guard ring design enhance reverse energy handling and reliability under repetitive surge stress.
The ThinKey™4 ceramic package enables low inductance and very low thermal resistance (0.50°C/W junction-to-case), supporting high-density board layouts where thermal management and fast switching are essential. It is rated for continuous operation from –55°C to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 45 V - Maximum repetitive reverse blocking voltage; defines safe operating limit in flyback or synchronous rectifier topologies. |
| IF(ave) | 75 A @ Tc ≤ 125°C - Continuous DC output current capability when mounted on heatsink; determines minimum heatsink size. |
| θJC | 0.50°C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink without thermal pad derating. |
| VF5 | 575–650 mV @ 75 A, 25°C - Forward drop at full rated current; directly impacts conduction loss and efficiency at nominal load. |
| IR125 | 175–300 mA @ 45 V, 125°C - High-temperature reverse leakage; critical for standby power budget and thermal runaway margin. |
| IFSM | 500 A @ 8.3 ms half-sine - Non-repetitive surge rating; supports inrush current handling during hot-plug or startup events. |
| BVR | ≥45 V @ –55°C, 5 mA - Low-temperature breakdown margin ensures robustness in cold-start conditions. |
Pinout & Package
MSASC75H45F/TR uses the ThinKey™4 hermetically sealed ceramic surface-mount package: two-terminal, anode-strapped configuration (strap = anode), low-inductance layout, and metalized base for direct heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode Strap | Positive input / current entry point | Low-inductance, wide-area metal strap; designed for direct soldering to PCB power plane or heatsink mounting surface. |
| Cathode Pad | Negative output / current exit point | Exposed copper pad on bottom; serves as primary thermal path and electrical return node in high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Tungsten/platinum Schottky barrier | Enables VF ≤ 650 mV at 75 A/25°C-reducing conduction loss by ~15% vs. standard nickel-barrier Schottkys at same current. |
| Oxide passivation + guard ring | Supports 2 A IRRM peak reverse surge and improves long-term reliability under repetitive dv/dt stress in hard-switched converters. |
| Hermetic ceramic packaging | Eliminates moisture ingress risk and enables >10-year field life in humid industrial environments without conformal coating. |
| Epitaxial structure | Reduces series resistance and improves VF consistency across temperature-critical for parallel diode operation. |
| ThinKey™4 footprint | 0.25 mm profile and metal-base thermal interface allow integration into ultra-thin 1U server PSUs and compact base station power modules. |
Applications
| Telecom Rectifier Module | Industrial DC-DC Converter |
|---|---|
Use Scenario: 48 V input–12 V/75 A output stage in distributed power architecture (DPA) for cellular base stations. IC Role / Device Role / Timing Role: Primary output rectifier replacing MOSFET synchronous switches in cost-sensitive, high-reliability designs. Use Value: Eliminates gate drive complexity and body diode conduction loss while maintaining <1.2% conduction loss at full load. | Use Scenario: High-current auxiliary rail (e.g., 24 V/60 A) in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Freewheeling and output rectification element in non-isolated buck-derived topology. Use Value: Withstands –40°C to +85°C ambient and 150°C junction, enabling fanless operation in sealed enclosures. |
| Server VRM Output Stage | EV Charging Auxiliary Supply |
Use Scenario: Secondary-side rectification in 48 V–12 V intermediate bus converter for AI accelerator racks. IC Role / Device Role / Timing Role: Low-VF, high-current freewheel diode paralleled with MOSFETs in hybrid synchronous rectification scheme. Use Value: Reduces peak temperature rise by 18°C vs. standard Schottky under 75 A pulse loading, improving system MTBF. | Use Scenario: 400 V–12 V isolated auxiliary supply in liquid-cooled EV charging module. IC Role / Device Role / Timing Role: Output rectifier in forward converter secondary, operating continuously at 125°C case temperature. Use Value: Maintains <300 mA leakage at 45 V/125°C-prevents thermal runaway in unventilated, high-power-density enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-75CTQ045 | 45 V, 75 A, θJC = 0.65°C/W, VF ≈ 620 mV @ 75 A/25°C, NiSi barrier, plastic TO-263 package | Higher thermal resistance requires larger heatsink; less suitable for ultra-thin profiles | Preferred where cost sensitivity outweighs thermal density constraints |
| ON Semiconductor MBR7545CT | 45 V, 75 A, dual common-cathode die, θJC = 0.75°C/W, VF ≈ 640 mV @ 75 A/25°C, epoxy D2PAK | Dual configuration enables interleaved designs but adds layout complexity; lower thermal performance | Used when dual-diode topology or legacy D2PAK footprint is required |
Compared with VS-75CTQ045 and MBR7545CT, MSASC75H45F/TR offers superior thermal performance (0.50°C/W), hermetic reliability, and lower VF at high current-making it optimal for mission-critical, space-constrained, and high-ambient-temperature applications where long-term stability is mandatory.
Availability
MSASC75H45F/TR is available at Aetrix Electronics and suitable for telecom rectifier modules, industrial DC-DC converters, and EV charging auxiliary supplies requiring stable component supply, long-lifecycle assurance, and traceable hermetic packaging.
Supply support for MSASC75H45F/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial power systems.
The MSASC75H45F/TR belongs to Microsemi's ThinKey™ high-current Schottky rectifier family, engineered for zero-failure-rate power conversion in harsh-environment infrastructure equipment.
FAQ
What is the polarity configuration of MSASC75H45F/TR?
The MSASC75H45F/TR is the standard polarity version: the metal strap is the anode terminal, and the exposed bottom pad is the cathode. This matches the 1N6818 designation and is intended for conventional forward-biased rectification where the anode connects to the higher-potential node. The reverse-polarity variant is MSASC75H45FR (1N6818R).
Does MSASC75H45F/TR require a thermal pad or solder mask opening for heatsinking?
No-MSASC75H45F/TR uses a metal-base ThinKey™4 package where the cathode pad is designed for direct solder attachment to a copper heatsink or thermal plane. No thermal pad or solder mask opening is needed; full-surface reflow soldering to a 2 oz. copper thermal pad achieves the specified 0.50°C/W θJC.
What is the maximum allowable case temperature for continuous operation of MSASC75H45F/TR?
The MSASC75H45F/TR supports continuous operation up to Tc = 125°C, delivering its full 75 A IF(ave) rating at that temperature. Derating begins above 125°C at 4 A/°C, per datasheet specification. Junction temperature must remain within –55°C to +150°C under all operating conditions.
How does the tungsten/platinum barrier in MSASC75H45F/TR improve performance over standard nickel-silicon Schottky diodes?
The tungsten/platinum barrier in MSASC75H45F/TR lowers the effective barrier height and reduces series resistance, yielding VF values up to 50 mV lower at 75 A/25°C versus comparable NiSi devices. This directly reduces conduction loss and thermal stress-especially beneficial in high-current, high-temperature applications like telecom rectifiers.
Is MSASC75H45F/TR suitable for use in automotive under-hood applications?
MSASC75H45F/TR is not AEC-Q101 qualified and lacks automotive-specific qualification testing. While its –55°C to +150°C junction rating meets under-hood temperature ranges, its qualification scope covers industrial, telecom, and military applications-not automotive safety-critical systems. For automotive use, consult Microchip's AEC-Q101-certified alternatives.
MSASC75H45F/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- ThinKey™4
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 45 V
- Current - Average Rectified (Io):
- 75A
- Voltage - Forward (Vf) (Max) @ If:
- 650 mV @ 75 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 7.5 mA @ 45 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ThinKey™4
- Operating Temperature - Junction:
- -55°C ~ 150°C
MSASC75H45F/TR FAQ
1.How can I place an order for MSASC75H45F/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MSASC75H45F/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSASC75H45F/TR reliable?
The price and inventory of MSASC75H45F/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSASC75H45F/TR is usually 5 days.
3.What payment methods are accepted for MSASC75H45F/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSASC75H45F/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSASC75H45F/TR?
MSASC75H45F/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSASC75H45F/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSASC75H45F/TR?
For technical support, including MSASC75H45F/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSASC75H45F/TR requirements.
6.How does Aetrix verify that MSASC75H45F/TR is sourced from the original manufacturer or authorized distributors?
All MSASC75H45F/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSASC75H45F/TR meets industry standards.
7.What is the process for return or replacement of MSASC75H45F/TR?
All MSASC75H45F/TR units undergo pre-shipment inspection (PSI). If there is an issue with MSASC75H45F/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSASC75H45F/TR part is unused and in its original packaging.
Return procedure for MSASC75H45F/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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