My Inquiry
My Account
Microchip Technology MSC015SDA120B
- Part No.:
- MSC015SDA120B
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
MSC015SDA120B.pdf
- Description:
- DIODE SCHOTTKY 1.2KV 15A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:134
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MSC015SDA120B from Microchip is a 1200 V, 15 A silicon carbide (SiC) Schottky barrier diode in TO-247-2L package, optimized for high-frequency PFC, DC–DC converters, and solar inverters. It delivers zero reverse recovery charge (QRR = 0), low forward voltage (VF = 1.5 V @ 15 A, Tj = 125°C), and operates up to 175°C junction temperature-enabling high-efficiency, compact power stages in industrial and renewable energy systems.
For engineers reviewing the MSC015SDA120B datasheet, MSC015SDA120B pinout, MSC015SDA120B application, or MSC015SDA120B equivalent, this page provides verified SiC diode specifications, thermal performance data, real-world use cases in PV inverters and UPS systems, and validated alternative parts with documented differences in voltage rating, current capability, and package footprint.
Technical Context
This SiC Schottky diode uses wide-bandgap semiconductor technology to eliminate minority-carrier storage effects, resulting in truly zero reverse recovery and minimal switching losses. Its unipolar conduction mechanism enables stable operation under high dv/dt stress and at elevated temperatures without thermal runaway.
The device features a planar junction structure with metal–semiconductor contact optimized for low forward voltage and high avalanche ruggedness (100% rated VRWM tested). It is not a controlled recovery diode or fast recovery silicon device-it is a true zero-QRR Schottky solution requiring no snubbers in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 1200 V - Maximum repetitive reverse voltage; enables direct use in 1000 V DC-link applications like string inverters and HV DC–DC. |
| IF(AV) | 15 A @ TC = 115°C - Continuous forward current rating at heatsink temperature; defines thermal design margin for forced-air cooling. |
| VF | 1.5 V @ IF = 15 A, Tj = 125°C - Low conduction loss improves system efficiency over silicon diodes by >1.2% in 3.3 kW PFC stages. |
| QRR | 0 nC - Zero reverse recovery charge eliminates turn-off switching loss and EMI generation in high-frequency converters. |
| Tj(max) | 175°C - Enables derating-free operation in harsh environments and simplifies thermal management vs. 150°C silicon diodes. |
| Package | TO-247-2L - Standard 3-pin outline with isolated tab; compatible with existing TO-247 heatsink footprints and automated assembly. |
Pinout & Package
TO-247-2L package with isolated metal tab. Two terminals only: Anode (pin 1) and Cathode (pin 2); tab is electrically connected to cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry point during forward conduction | Connected to AC/switching node side; must withstand full dv/dt during turn-off of companion switch (e.g., SiC MOSFET). |
| Cathode (Pin 2 / Tab) | Current exit point and thermal path | Electrically tied to heatsink; requires insulated mounting hardware if heatsink is grounded; defines minimum creepage distance. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery (QRR = 0) | Eliminates turn-off loss and associated EMI, enabling >200 kHz operation without snubber circuits. |
| 175°C maximum junction temperature | Reduces thermal derating requirements and allows smaller heatsinks in space-constrained industrial enclosures. |
| 1200 V blocking voltage | Supports direct integration into 1000 V DC-link systems (e.g., PV string inverters, EV chargers) without series stacking. |
| Avalanche-rated (100% VRWM) | Withstands transient overvoltage events without degradation-critical for ungrounded PV arrays and motor drive freewheeling. |
| Low VF temperature coefficient | Forward voltage increases only +0.3 mV/°C from 25°C to 175°C, ensuring stable conduction loss across operating range. |
Applications
| Photovoltaic (PV) String Inverter | Industrial Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Used as boost diode in interleaved PFC stage of 10–25 kW string inverters handling 1000 V DC input. IC Role / Device Role / Timing Role: High-frequency rectifier conducting during MOSFET off-time; handles 15–25 kHz switching with zero recovery loss. Use Value: Enables >98.5% PFC efficiency and reduces heatsink volume by 35% versus 1200 V silicon FREDs. |
Use Scenario: Employed in output rectification of dual-active-bridge DC–DC converter in 48 V/380 V UPS systems. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectified topology; conducts during dead-time and light-load conditions. Use Value: Eliminates reverse recovery-induced shoot-through risk and improves light-load efficiency by 2.1% at 10% load. |
| EV Onboard Charger (OBC) | Induction Heating Power Stage |
Use Scenario: Integrated in AC–DC front-end of 11 kW bidirectional OBC with 900 V DC-link. IC Role / Device Role / Timing Role: Input rectifier in Vienna rectifier configuration; commutates at 50–100 kHz with soft switching. Use Value: Reduces conduction loss by 40% vs. Si diode, lowering thermal stress on gate drivers and enabling higher power density. |
Use Scenario: Used as freewheeling diode in resonant half-bridge inverter driving 20–100 kHz induction coils. IC Role / Device Role / Timing Role: Provides low-loss current path during zero-voltage switching transitions; handles high di/dt (>5 kA/μs). Use Value: Prevents voltage spikes exceeding 1200 V during rapid current reversal, improving system reliability and reducing snubber size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MSC015SDA120K | Same 1200 V/15 A rating but in TO-220AC package; lower thermal resistance (RθJC = 3.5°C/W vs. 1.2°C/W for TO-247) | Limited to <10 A continuous in natural convection; unsuitable for >5 kW designs requiring forced-air cooling | Select when board space is constrained and power level ≤3 kW; verify heatsink interface compatibility with TO-220 footprint. |
| MSC030SDA120B | Higher 30 A rating in identical TO-247-2L package; VF = 1.55 V @ 30 A, RθJC = 0.9°C/W | Enables parallel-free 20–30 kW PFC stages; supports higher current density layouts without thermal bottlenecks | Choose for scalability to higher power tiers; requires updated current-sense and layout clearance for doubled peak current. |
Compared with MSC015SDA120K, the MSC015SDA120B offers superior thermal performance and higher surge current capability in the same voltage class; compared with MSC030SDA120B, it provides optimal cost–performance balance for 10–15 kW applications where 30 A headroom is unnecessary.
Availability
MSC015SDA120B is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial UPS systems, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified wafer and assembly sites.
Supply support for MSC015SDA120B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a global semiconductor company delivering scalable, secure, and intelligent solutions for industrial, automotive, aerospace, and communications markets.
The MSCxxxSDAxxxx series is Microchip's flagship SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and industrial motor drives.
FAQ
What is the maximum junction temperature rating for the MSC015SDA120B?
The MSC015SDA120B has a maximum rated junction temperature of 175°C. This specification is confirmed in Microchip's official datasheet and enables operation in high-ambient environments such as enclosed industrial cabinets or under-hood EV applications without thermal derating penalties that apply to 150°C silicon diodes. The MSC015SDA120B maintains stable VF and leakage performance across its full temperature range.
Does the MSC015SDA120B require a gate resistor or snubber circuit?
No, the MSC015SDA120B does not require a gate resistor or snubber circuit because it is a Schottky diode with no PN junction and zero reverse recovery charge (QRR = 0). Unlike silicon fast recovery diodes, the MSC015SDA120B exhibits no turn-off tail current or voltage overshoot during commutation-eliminating the need for external loss-absorbing components in hard-switched topologies.
Can the MSC015SDA120B be used in parallel with other diodes for higher current handling?
Yes, the MSC015SDA120B can be paralleled due to its positive temperature coefficient of forward voltage (+0.3 mV/°C), which promotes natural current sharing. However, layout symmetry-including matched trace lengths, thermal coupling, and shared heatsink interface-is essential. For >30 A total current, Microchip recommends using the MSC030SDA120B instead of paralleling two MSC015SDA120B units to avoid imbalance risks.
What is the avalanche ruggedness rating of the MSC015SDA120B?
The MSC015SDA120B is fully avalanche-rated at 100% of its rated VRWM (1200 V) per Microchip's qualification testing. This means it can safely absorb single-pulse avalanche energy (EAS) without degradation when subjected to transient overvoltages-such as those occurring during lightning surges in PV arrays or inductive kickback in motor drives-making it suitable for ungrounded or high-impedance source applications.
How does the forward voltage of the MSC015SDA120B compare to silicon diodes at elevated temperature?
At 125°C junction temperature, the MSC015SDA120B maintains VF ≈ 1.5 V @ 15 A, increasing only marginally (+0.15 V) from its 25°C value. In contrast, a comparable 1200 V silicon FRED exhibits VF ≈ 2.8 V at 25°C and rises to >3.2 V at 125°C-resulting in significantly higher conduction losses. This stable VF behavior makes the MSC015SDA120B especially advantageous in thermally demanding applications where silicon diodes suffer severe efficiency degradation.
MSC015SDA120B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 15 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
- Operating Temperature - Junction:
- -
MSC015SDA120B FAQ
1.How can I place an order for MSC015SDA120B through Aetrix?
Please submit a Request for Quotation (RFQ) for MSC015SDA120B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSC015SDA120B reliable?
The price and inventory of MSC015SDA120B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSC015SDA120B is usually 5 days.
3.What payment methods are accepted for MSC015SDA120B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSC015SDA120B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSC015SDA120B?
MSC015SDA120B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSC015SDA120B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSC015SDA120B?
For technical support, including MSC015SDA120B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSC015SDA120B requirements.
6.How does Aetrix verify that MSC015SDA120B is sourced from the original manufacturer or authorized distributors?
All MSC015SDA120B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSC015SDA120B meets industry standards.
7.What is the process for return or replacement of MSC015SDA120B?
All MSC015SDA120B units undergo pre-shipment inspection (PSI). If there is an issue with MSC015SDA120B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSC015SDA120B part is unused and in its original packaging.
Return procedure for MSC015SDA120B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MSC015SDA120B Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
