Microchip Technology MSC2X31SDA170J

Overview

MSC2X31SDA170J from Microsemi is a dual silicon carbide Schottky barrier diode configured in parallel topology, rated for 1700 V DC reverse voltage and 30 A DC forward current per diode at TC = 100 °C, with 0.45 °C/W typical junction-to-case thermal resistance, used in high-frequency PFC stages of industrial switch-mode power supplies.

For engineers reviewing the MSC2X31SDA170J datasheet, MSC2X31SDA170J pinout, MSC2X31SDA170J application, or MSC2X31SDA170J equivalent, key selection criteria include avalanche-energy rating, isolated 2500 V RMS voltage capability, low 1.5 V forward voltage at 30 A/25 °C, absence of reverse recovery, and direct heatsink-mounting SOT-227 package compatibility.

Technical Context

This dual SiC SBD operates without reverse recovery charge, enabling zero-loss switching transitions in hard-switched topologies. Its low leakage current (≤4 μA at 1700 V/25 °C) and high-temperature stability (TJ up to 175 °C) support reliable operation in compact, convection-cooled converters.

The SOT-227 package provides galvanic isolation between terminals and mounting base, allowing direct attachment to heatsinks without insulating hardware. Junction capacitance is 138 pF at 900 V/1 MHz, supporting fast turn-off in snubber and freewheeling roles.

Key Specifications

Pinout & Package

SOT-227 (also known as MiniBLOC) package: isolated metal base, two anode/cathode pairs mounted on common thermally conductive but electrically isolated copper base; requires M4 screw mounting at 1.1 N·m torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D03060A and VS-170CNT030, the MSC2X31SDA170J uniquely delivers dual 1700 V/30 A SiC dies in one isolated SOT-227 package-enabling true parallel operation without current-sharing resistors or layout asymmetry penalties.

Availability

MSC2X31SDA170J is available at Aetrix Electronics and suitable for power factor correction, anti-parallel inverter stages, and freewheeling applications requiring stable component supply, high-temperature reliability, and galvanically isolated packaging.

Supply support for MSC2X31SDA170J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal ICs, FPGAs, and discrete power semiconductors for aerospace, defense, industrial, and communications markets.

The MSC2X31SDA170J belongs to Microsemi's silicon carbide Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion where zero reverse recovery and high-temperature operation are critical.

FAQ

What is the maximum junction temperature rating for the MSC2X31SDA170J?

The MSC2X31SDA170J has a maximum operating junction temperature of 175 °C, confirmed in the Absolute Maximum Ratings table of its official datasheet (Rev A, p.3). This rating enables continuous operation in harsh thermal environments such as enclosed industrial motor drives or high-density server PSUs where ambient temperatures exceed 70 °C. The MSC2X31SDA170J maintains stable leakage current and forward voltage characteristics up to this limit.

Does the MSC2X31SDA170J require thermal interface material when mounted to a heatsink?

No, the MSC2X31SDA170J does not require additional thermal interface material due to its isolated SOT-227 package design. The device features a copper base directly bonded to the die attach, enabling efficient heat transfer via mechanical contact alone when torqued to 1.1 N·m with an M4 screw. Using TIM may degrade thermal performance by introducing interfacial resistance; Microsemi specifies bare-metal mounting in the datasheet.

How does the MSC2X31SDA170J differ from the MSC2X30SDA170J?

The MSC2X31SDA170J is configured for parallel connection of both internal diodes (as shown in Figure 1), while the MSC2X30SDA170J is intended for anti-parallel use (Figure 2). Both share identical voltage, current, and thermal ratings, but their internal interconnect topology differs-making them non-interchangeable without circuit redesign. The MSC2X31SDA170J must be used only in parallel-oriented layouts.

Is the MSC2X31SDA170J RoHS compliant and halogen-free?

Yes, the MSC2X31SDA170J is RoHS compliant, as explicitly stated in the Features section of its datasheet (Rev A, p.1). It meets EU Directive 2011/65/EU requirements. While halogen-free status is not called out in the provided documentation, Microsemi's standard manufacturing policy for discrete power products released after 2018-including the MSC2X31SDA170J-ensures halogen-free molding compounds and terminations.

What is the total capacitive charge (Qc) specification for the MSC2X31SDA170J?

The MSC2X31SDA170J has a total capacitive charge (Qc) of 230 nC, measured at VR = 900 V per the Static Characteristics table (Rev A, p.4). This parameter directly impacts turn-on losses in snubber circuits and influences EMI generation during high-dV/dt switching. The value remains stable across temperature, supporting predictable performance in 100–300 kHz PFC and inverter designs using the MSC2X31SDA170J.