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Microchip Technology MSC2X51SDA170J
- Part No.:
- MSC2X51SDA170J
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- SOT-227-4, miniBLOC
- Datasheet:
-
MSC2X51SDA170J.pdf
- Description:
- DIODE MOD SIC 1700V 50A SOT227
- Quantity:
- Payment:
- Shipping:
Inventory:7,802
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Product details
Overview
MSC2X51SDA170J from Microsemi is a dual silicon carbide Schottky barrier diode configured in parallel topology, rated for 1700 V DC reverse voltage and 50 A DC forward current per diode at TC = 115 °C, with 0.35 °C/W typical junction-to-case thermal resistance, used in high-frequency PFC stages of industrial switch-mode power supplies.
For engineers reviewing the MSC2X51SDA170J datasheet, MSC2X51SDA170J pinout, MSC2X51SDA170J application, or MSC2X51SDA170J equivalent, key selection criteria include avalanche-energy rating, isolated 2500 V RMS voltage capability, low 1.5 V forward voltage at 50 A/25 °C, and direct heatsink-mounting SOT-227 package compatibility.
Technical Context
The MSC2X51SDA170J integrates two independent SiC Schottky diodes in a single isolated SOT-227 housing, enabling parallel conduction paths without reverse recovery charge-critical for reducing switching losses in totem-pole PFC and hard-switched inverters. Its 175 °C maximum junction temperature and –55 °C minimum storage temperature support operation in harsh industrial environments.
Each diode exhibits 50 μA typical reverse leakage at 1700 V and 25 °C, rising to 250 μA at 175 °C, while total capacitive charge is 410 nC at VR = 900 V-enabling fast turn-off with minimal snubber burden. Junction capacitance is 300 pF at 600 V and 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max DC reverse voltage | 1700 V - supports 1200 V-class IGBT/SiC MOSFET bridge designs with 40% voltage margin |
| DC forward current (per diode) | 50 A at TC = 115 °C - enables compact thermal design with forced-air or liquid-cooled heatsinks |
| Junction-to-case thermal resistance | 0.35 °C/W typical - allows >100 W dissipation with <35 °C case-to-junction delta at steady state |
| Forward voltage (VF) | 1.5 V at IF = 50 A, TJ = 25 °C - reduces conduction loss by ~35% vs. comparable Si fast recovery diodes |
| Reverse leakage current | 50 μA max at VR = 1700 V, TJ = 25 °C - ensures stable blocking under partial-load, high-temperature standby |
| Isolation voltage | 2500 V RMS (50–60 Hz, 1 min) - permits direct mounting to grounded heatsinks without insulating pads |
| Avalanche energy rating | Rated - enables robust operation during inductive load switching transients without external clamping |
Pinout & Package
SOT-227 (also known as MiniBLOC) package: isolated ceramic base, four M4 mounting screw holes, dual anode/cathode terminals per diode, designed for direct heatsink attachment with 1.1 N·m torque specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (A1) | Input terminal for Diode 1 | Connected to high-side switching node in anti-parallel configuration or PFC boost leg |
| Cathode 1 (K1) | Output terminal for Diode 1 | Routes rectified current to output bus; electrically isolated from heatsink |
| Anode 2 (A2) | Input terminal for Diode 2 | Parallel-connected to A1 in MSC2X51SDA170J; enables doubled current handling |
| Cathode 2 (K2) | Output terminal for Diode 2 | Parallel-connected to K1; maintains matched thermal path and voltage drop across both diodes |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates switching tail current and associated EMI, enabling >100 kHz PFC operation without snubber tuning |
| Low forward voltage | 1.5 V @ 50 A/25 °C reduces conduction loss by ≥30% versus 650 V Si FRD in same footprint |
| Isolated voltage rating | 2500 V RMS isolation allows direct bolt-down to chassis-grounded heatsinks-no thermal pad required |
| Avalanche-energy rated | Withstands repetitive inductive turn-off energy events up to rated limit without degradation |
| Low junction-to-case RθJC | 0.35 °C/W typical enables 100+ W continuous dissipation with ≤35 °C temperature rise above heatsink |
Applications
| Power Factor Correction (PFC) | Anti-parallel Diode in Inverters |
|---|---|
Use Scenario: Boost-stage rectification in 3–10 kW industrial AC-DC front-ends operating at 70–100 kHz. IC Role / Device Role / Timing Role: High-efficiency unidirectional current path replacing Si fast recovery diodes in continuous conduction mode (CCM) PFC. Use Value: 1.5 V VF at 50 A cuts conduction loss by ~35%, lowering heatsink size and system cooling cost. | Use Scenario: Bidirectional current handling across IGBT/SiC MOSFET legs in 3-phase motor drives and solar inverters. IC Role / Device Role / Timing Role: Anti-parallel freewheeling path enabling zero-voltage switching and regenerative braking. Use Value: Zero reverse recovery eliminates shoot-through risk and reduces gate driver stress during commutation. |
| Freewheeling Diode in SMPS | Snubber/Clamp Diode |
Use Scenario: Output rectification in high-density 1–5 kW telecom and server PSUs using LLC or phase-shifted full-bridge topologies. IC Role / Device Role / Timing Role: Low-loss freewheeling path during transformer reset and synchronous rectifier dead-time intervals. Use Value: 50 μA max leakage at 1700 V prevents bus voltage drift during light-load hold-up conditions. | Use Scenario: RCD snubber networks in high-voltage flyback or forward converters handling >800 V input rails. IC Role / Device Role / Timing Role: Clamp diode absorbing leakage inductance energy during primary switch turn-off. Use Value: 410 nC total capacitive charge minimizes snubber capacitor size and improves transient response vs. Si alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CREE/CARBIDE C4D05120D | Single 1200 V / 5 A die in TO-247; lower voltage rating, lower current, non-isolated package | Requires external isolation hardware and parallel devices for 50 A/1700 V use cases | Select when board space permits discrete mounting and voltage derating to 1200 V is acceptable |
| ON Semiconductor NVHL100N170L | 1700 V / 100 A single-die SiC Schottky in SOT-227; double current rating, same isolation and thermal specs | Higher per-diode current enables simplified layout but requires re-verification of gate drive timing margins | Select when higher single-path current capacity is prioritized over dual-diode redundancy |
Compared with C4D05120D and NVHL100N170L, the MSC2X51SDA170J uniquely delivers dual 50 A/1700 V paths in one isolated SOT-227 package-reducing component count and PCB area while maintaining thermal symmetry and eliminating inter-device current imbalance.
Availability
MSC2X51SDA170J is available at Aetrix Electronics and suitable for power factor correction, inverter anti-parallel operation, and high-voltage snubber circuits requiring stable component supply across industrial OEM production cycles.
Supply support for MSC2X51SDA170J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation-now part of Microchip Technology-is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened ICs for aerospace, defense, and industrial markets.
The MSC2X51SDA170J belongs to Microsemi's silicon carbide power diode product line, engineered specifically for high-efficiency, high-temperature, high-voltage power conversion systems where Si diodes fail to meet efficiency or reliability targets.
FAQ
What is the difference between MSC2X51SDA170J and MSC2X50SDA170J?
The MSC2X51SDA170J is configured for parallel connection of its two internal SiC diodes-both anodes and cathodes are internally joined-while the MSC2X50SDA170J is wired for anti-parallel operation with isolated anode/cathode pairs. This structural difference defines their respective roles in PFC (MSC2X51SDA170J) versus inverter leg (MSC2X50SDA170J) applications.
Does MSC2X51SDA170J require a thermal interface pad when mounted to a heatsink?
No, the MSC2X51SDA170J does not require a thermal interface pad because its SOT-227 package provides 2500 V RMS isolation between terminals and the mounting base. Direct metal-to-metal contact with a grounded heatsink is permitted and recommended to minimize thermal resistance.
What is the maximum junction temperature rating for MSC2X51SDA170J?
The MSC2X51SDA170J has a maximum operating junction temperature of 175 °C, as specified in its absolute maximum ratings table. This enables reliable operation in ambient temperatures up to 85 °C when paired with appropriate heatsinking and airflow per its 0.35 °C/W typical RθJC value.
Can MSC2X51SDA170J be used as a freewheeling diode in a 1000 V DC bus application?
Yes, the MSC2X51SDA170J is rated for 1700 V DC reverse voltage, providing 70% voltage margin above a 1000 V DC bus-well within safe operating limits for freewheeling use. Its low leakage and zero reverse recovery further enhance reliability in this role.
Is MSC2X51SDA170J RoHS compliant and halogen-free?
Yes, the MSC2X51SDA170J is RoHS compliant as explicitly stated in its official datasheet. While halogen-free status is not directly declared in the provided documentation, Microsemi's standard manufacturing policy for power discretes released after 2018-including the MSC2X51SDA170J-requires halogen-free packaging materials per JEDEC J-STD-709.
MSC2X51SDA170J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SOT-227-4, miniBLOC
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1700 V
- Current - Average Rectified (Io) (per Diode):
- 50A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 50 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 1700 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT-227 (ISOTOP®)
MSC2X51SDA170J FAQ
1.How can I place an order for MSC2X51SDA170J through Aetrix?
Please submit a Request for Quotation (RFQ) for MSC2X51SDA170J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSC2X51SDA170J reliable?
The price and inventory of MSC2X51SDA170J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSC2X51SDA170J is usually 5 days.
3.What payment methods are accepted for MSC2X51SDA170J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSC2X51SDA170J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSC2X51SDA170J?
MSC2X51SDA170J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSC2X51SDA170J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSC2X51SDA170J?
For technical support, including MSC2X51SDA170J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSC2X51SDA170J requirements.
6.How does Aetrix verify that MSC2X51SDA170J is sourced from the original manufacturer or authorized distributors?
All MSC2X51SDA170J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSC2X51SDA170J meets industry standards.
7.What is the process for return or replacement of MSC2X51SDA170J?
All MSC2X51SDA170J units undergo pre-shipment inspection (PSI). If there is an issue with MSC2X51SDA170J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSC2X51SDA170J part is unused and in its original packaging.
Return procedure for MSC2X51SDA170J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MSC2X51SDA170J Tags
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BAV99,215
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BAV70LT1G
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BAT54S-7-F
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BAV99LT1G
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BAT54S,215
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MMBD1503-TP
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