Taiwan Semiconductor Corporation MUR160

Overview

MUR160 from Taiwan Semiconductor is a 1 A, 600 V ultra-fast recovery rectifier diode in DO-204AC (DO-15) package, featuring 50 ns reverse recovery time, 1.25 V max forward voltage at 1 A/25°C, and 175°C maximum junction temperature - deployed in DC-DC converters and switching-mode inverters requiring high efficiency and thermal robustness.

For engineers reviewing the MUR160 datasheet, MUR160 pinout, MUR160 application, or MUR160 equivalent, key selection criteria include its 600 V repetitive peak reverse voltage, ultra-fast 50 ns trr, low VF under high-temperature operation, AEC-Q101 qualification availability, and DO-204AC mechanical compatibility with standard through-hole power rectifier footprints.

Technical Context

The MUR160 employs a single-die planar epitaxial construction optimized for fast soft recovery, minimizing switching losses in high-frequency SMPS topologies. Its 50 ns trr is measured under standardized conditions (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A), and junction capacitance is 27 pF at 1 MHz / 4.0 V reverse bias.

Thermal performance is defined by a 50°C/W junction-to-ambient resistance, enabling 1 A continuous conduction up to 175°C junction temperature. The device uses pure tin-plated leads compliant with J-STD-002 and meets JESD201 Class 2 whisker resistance.

Key Specifications

Pinout & Package

Package: DO-204AC (DO-15), axial leaded, epoxy-molded case with cathode band polarity marking. Weight: 0.400 g. Meets UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH1R06 and UF4007, the MUR160 delivers superior high-frequency efficiency via its 50 ns trr and 1.25 V VF, while maintaining DO-204AC compatibility - making it optimal for compact, thermally constrained, and automotive-grade 1 A rectification tasks.

Availability

MUR160 is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and freewheeling applications requiring stable component supply across automotive, industrial control, and power adapter production programs.

Supply support for MUR160 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power, automotive, and industrial markets since 1979.

The MUR160 belongs to TSC's MUR160–MUR190 ultra-fast recovery rectifier family, engineered specifically for high-efficiency, high-temperature switching power supplies where low VF and fast trr directly improve system-level power density and thermal margin.

FAQ

What is the maximum junction temperature rating for the MUR160?

The MUR160 has a maximum junction temperature (TJ) rating of +175°C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet. This allows uninterrupted operation in high-ambient environments such as engine compartments or enclosed industrial drives. The MUR160 maintains specified electrical performance up to this limit, provided thermal design respects its 50°C/W RθJA value.

Is the MUR160 pin-compatible with standard DO-204AC rectifiers like the 1N4007?

Yes, the MUR160 uses the DO-204AC (DO-15) package with identical mechanical dimensions and axial lead configuration as the 1N4007, enabling direct PCB footprint reuse. However, the MUR160 is not a functional drop-in replacement due to its 600 V VRRM (vs. 1N4007's 1000 V) and ultra-fast 50 ns trr - circuit timing and voltage margin must be re-verified when substituting the MUR160.

What is the reverse recovery time (trr) specification for the MUR160, and under what test conditions?

The MUR160 has a maximum reverse recovery time (trr) of 50 ns, measured under the condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A, per Taiwan Semiconductor's official test methodology. This value is confirmed in the Electrical Specifications table on page 2 of the MUR160–MUR190 datasheet (Version L2107). The MUR160 achieves this performance using optimized epitaxial doping and lifetime control.

Does the MUR160 meet automotive qualification standards?

The base MUR160 is not AEC-Q101 qualified, but the MUR160H variant - identified by the "H" suffix in the ordering code - is fully AEC-Q101 qualified and undergoes stress testing per automotive reliability requirements. For automotive applications requiring qualification, specify MUR160H; the MUR160 itself remains suitable for industrial and commercial systems where AEC-Q101 is not mandated.

What is the forward voltage (VF) of the MUR160 at elevated temperature?

At 1 A forward current and 150°C junction temperature, the MUR160 exhibits a typical forward voltage of 1.05 V - lower than its 1.25 V max rating at 25°C. This negative temperature coefficient of VF improves thermal stability in parallel configurations and reduces conduction loss under high-temperature operating conditions. The MUR160's VF behavior is documented in the Electrical Specifications table of the official datasheet.