Taiwan Semiconductor Corporation MUR315S M6G

Overview

MUR315S M6G from Taiwan Semiconductor is a 3A, 150V ultra-fast recovery surface-mount rectifier in DO-214AB (SMC) package, featuring 25ns reverse recovery time, 0.875V forward voltage at 3A/25°C, and 75A peak surge current - deployed in high-frequency switching mode power supplies for telecom and computing equipment.

For engineers reviewing the MUR315S M6G datasheet, MUR315S M6G pinout, MUR315S M6G application, or MUR315S M6G equivalent, key selection criteria include V_RRM = 150V, t_rr = 25ns, I_F = 3A continuous, thermal resistance R_θJL = 11°C/W, and DO-214AB mechanical compatibility with automated SMT placement.

Technical Context

This single-die ultra-fast rectifier uses glass-passivated junction technology to achieve low reverse recovery charge and minimal switching losses. Its 25ns t_rr enables operation in DC-DC converters and PFC stages up to several hundred kHz.

Rated for continuous operation from –55°C to +175°C junction temperature, it supports high-reliability freewheeling and output rectification where fast turn-off and low forward conduction loss are critical - especially under elevated thermal stress in compact power modules.

Key Specifications

Pinout & Package

Package: DO-214AB (SMC), surface-mount plastic case with matte tin-plated leads, cathode indicated by band. Weight: 0.210 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH3L06S and ON Semi MUR315S, the MUR315S M6G delivers the lowest combination of t_rr and V_F at 150V rating - making it optimal for space-constrained, high-efficiency secondary-side rectification where thermal and switching loss budgets are tight.

Availability

MUR315S M6G is available at Aetrix Electronics and suitable for telecom AC-DC adapters, server VRMs, and industrial PLC power supplies requiring stable component supply and consistent DO-214AB packaging.

Supply support for MUR315S M6G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability rectifiers, TVS diodes, and MOSFETs for industrial and communications markets.

The MUR315S M6G belongs to TSC's ultra-fast rectifier product line, engineered specifically for high-frequency switching power conversion in telecom infrastructure and enterprise computing systems where low t_rr and robust thermal performance are mandatory.

FAQ

What is the maximum junction temperature rating for the MUR315S M6G?

The MUR315S M6G has a maximum junction temperature (T_J) rating of +175°C, with a corresponding storage temperature range of –55°C to +175°C. This allows reliable operation in high-ambient environments such as enclosed telecom chassis or industrial control cabinets. The device maintains specified electrical parameters up to this limit when thermal design ensures junction temperature remains within bounds. Derating curves in the official datasheet confirm usable current capacity down to 1.8A at 125°C lead temperature.

Does the MUR315S M6G have a halogen-free and RoHS-compliant construction?

Yes, the MUR315S M6G is both RoHS compliant and halogen-free per IEC 61249-2-21. Its molding compound and plating meet environmental compliance standards required for export to EU, China, and Japan markets. The "M6G" suffix explicitly denotes green compound and halogen-free material content, verified through TSC's internal material declarations and third-party test reports. No brominated flame retardants or chlorine-based additives are used in the DO-214AB package.

What is the reverse recovery time (t_rr) specification for the MUR315S M6G, and under what test conditions?

The MUR315S M6G has a typical reverse recovery time (t_rr) of 25 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_RR = 0.25 A, per the official Taiwan Semiconductor datasheet. This value applies across the full operating temperature range and is confirmed for all MUR305S–MUR320S variants. The ultra-fast t_rr is achieved via optimized lifetime control in the epitaxial silicon structure, enabling clean commutation in high-frequency SMPS topologies.

Is the MUR315S M6G suitable for use in automotive applications?

No, the MUR315S M6G is not qualified for automotive applications. Taiwan Semiconductor explicitly states in its product notice that devices in the MUR305S–MUR360S series are not designed for medical, life-saving, or life-sustaining applications - and no AEC-Q101 qualification data or automotive-grade screening is provided. While its 175°C junction rating may appear sufficient, absence of PPAP documentation, failure-in-time (FIT) data, and automotive-specific reliability testing precludes use in ADAS, infotainment, or powertrain systems.

How does the forward voltage (V_F) of the MUR315S M6G vary with temperature and current?

The MUR315S M6G exhibits a typical V_F of 0.875 V at I_F = 3 A and T_J = 25°C, decreasing to 0.710 V at T_J = 150°C due to negative temperature coefficient of silicon PN junctions. This reduction lowers conduction loss at elevated temperatures - a beneficial trait for thermally stressed power stages. The datasheet provides full forward characteristic curves (Fig.4 and Fig.6), confirming monotonic behavior across –55°C to +175°C and up to 4 A pulsed current.