Taiwan Semiconductor Corporation MUR4L20

Overview

MUR4L20 from Taiwan Semiconductor is an ultra-fast recovery rectifier diode rated for 4 A average forward current and 200 V repetitive peak reverse voltage, featuring 25 ns reverse recovery time and 0.89 V max forward voltage at 4 A and 25°C. It uses a glass-passivated single die in DO-201AD package and serves as a freewheeling or output rectifier in high-frequency DC-DC converters.

For engineers reviewing the MUR4L20 datasheet, MUR4L20 pinout, MUR4L20 application, or MUR4L20 equivalent, key selection criteria include its 25 ns trr, 125 A IFSM surge rating, 175°C maximum junction temperature, DO-201AD mechanical compatibility, and AEC-Q101 qualification availability (MUR4L20H variant).

Technical Context

The MUR4L20 employs a planar epitaxial silicon structure with glass passivation to achieve ultra-fast switching and stable high-temperature operation up to 175°C. Its 25 ns reverse recovery time and low 0.89 V forward voltage drop at rated current support high-efficiency power conversion in hard-switched topologies.

Thermal performance is defined by 15°C/W junction-to-lead and 36°C/W junction-to-ambient resistance, enabling reliable conduction under continuous 4 A load with appropriate PCB copper area. The DO-201AD package supports lead-free soldering per J-STD-002 and meets JESD201 Class 2 whisker resistance.

Key Specifications

Pinout & Package

Package: DO-201AD axial-leaded plastic package with cathode band marking; 1.20 g mass; UL 94V-0 molding compound; pure tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH4L06D and MUR420E, the MUR4L20 delivers best-in-class 25 ns trr and 0.89 V VF in the compact DO-201AD package-ideal for space-constrained, high-frequency 200 V rectification where thermal design permits leaded mounting.

Availability

MUR4L20 is available at Aetrix Electronics and suitable for DC-DC converters, switching mode inverters, and freewheeling applications requiring stable component supply, consistent DO-201AD packaging, and verified ultra-fast recovery performance.

Supply support for MUR4L20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The MUR4L20 belongs to TSC's ultra-fast rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in space- and thermally constrained applications where low VF and minimal trr are critical.

FAQ

What is the maximum junction temperature rating for the MUR4L20?

The MUR4L20 has a maximum junction temperature (TJ max) of +175°C, allowing reliable operation in high-ambient environments such as enclosed industrial power supplies or under-hood automotive electronics. This rating is validated across its full operating current range and supports extended lifetime when thermal design maintains junction temperature below this limit. The MUR4L20 achieves this via glass-passivated silicon and optimized DO-201AD thermal path.

Is the MUR4L20 RoHS and halogen-free compliant?

Yes, the MUR4L20 is fully RoHS compliant and halogen-free, meeting EU Directive 2011/65/EU and IEC 61249-2-21 requirements. The molding compound contains no brominated flame retardants or chlorine-based additives, and terminal plating uses pure tin without lead or antimony. This compliance is confirmed in TSC's official material declarations and applies to all standard MUR4L20 ordering codes.

What is the reverse recovery time (trr) specification for the MUR4L20?

At IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, the MUR4L20 exhibits a typical reverse recovery time (trr) of 25 ns, with no maximum specified-only upper limit implied by test condition. This value is measured per JEDEC JESD28-C and enables efficient operation in switching power supplies above 100 kHz. The MUR4L20's trr is significantly faster than standard fast recovery diodes, directly reducing switching losses.

Does the MUR4L20 have AEC-Q101 qualification?

The base MUR4L20 is not AEC-Q101 qualified, but the MUR4L20H variant is explicitly qualified per AEC-Q101 Rev D for automotive applications. The "H" suffix denotes additional stress testing including HTGB, HTRB, and temperature cycling. For automotive body electronics or infotainment power supplies requiring qualification, MUR4L20H-not MUR4L20-must be specified and sourced.

What is the forward voltage drop of the MUR4L20 at rated current?

The MUR4L20 has a maximum forward voltage (VF) of 0.89 V at 4 A forward current and 25°C junction temperature, measured under pulse conditions (PW = 0.3 ms). This low VF contributes to reduced conduction losses in high-current DC-DC outputs. At elevated temperatures (e.g., 125°C), VF decreases slightly due to negative temperature coefficient of silicon diodes, improving thermal stability in sustained-load scenarios.