Taiwan Semiconductor Corporation MUR4L20H

Overview

MUR4L20H from Taiwan Semiconductor is an AEC-Q101-qualified ultra-fast recovery rectifier diode rated for 4 A average forward current and 200 V repetitive peak reverse voltage, with 25 ns reverse recovery time and 0.89 V max forward voltage at 4 A and 25°C, used in automotive-grade DC-DC converters and switching inverters.

For engineers reviewing the MUR4L20H datasheet, MUR4L20H pinout, MUR4L20H application, or MUR4L20H equivalent, key selection criteria include its DO-201AD package, 125 A surge rating, 175°C max junction temperature, glass-passivated junction, and AEC-Q101 qualification for under-hood power conversion systems.

Technical Context

This single-die, unidirectional ultra-fast rectifier uses a planar epitaxial structure with glass passivation to achieve stable high-temperature switching up to 175°C junction temperature. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) enables high-frequency operation in SMPS topologies.

The device exhibits low 65 pF junction capacitance at 1 MHz and 4.0 V reverse bias, supporting reduced switching losses. With 15°C/W junction-to-lead thermal resistance and pure tin-plated leads compliant with J-STD-002, it delivers robust solderability and thermal performance in constrained layouts.

Key Specifications

Pinout & Package

Package: DO-201AD - axial-leaded, molded plastic case with cathode band marking; 9.5 mm body length, 5.6 mm diameter, 1.3 mm lead diameter; UL 94V-0 rated compound; 1.20 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH4L06D and ES4D-E3/54, MUR4L20H uniquely balances AEC-Q101 compliance, DO-201AD through-hole reliability, 200 V rating, and 25 ns trr-making it optimal for cost-sensitive, thermally constrained automotive DC-DC modules requiring proven field reliability.

Availability

MUR4L20H is available at Aetrix Electronics and suitable for automotive power conversion, industrial switching inverters, and renewable energy charge controllers requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.

Supply support for MUR4L20H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The MUR4L20H belongs to TSC's MUR4Lx ultra-fast rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial environments where AEC-Q101 validation and thermal robustness are mandatory.

FAQ

What does the "H" suffix in MUR4L20H signify?

The "H" suffix in MUR4L20H indicates full AEC-Q101 qualification per Rev D standards, covering stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. This certification confirms MUR4L20H's suitability for automotive powertrain and chassis applications where reliability under thermal and mechanical stress is critical.

Is MUR4L20H compatible with lead-free reflow soldering processes?

Yes, MUR4L20H features pure tin-plated leads qualified per J-STD-002 for solderability, supporting both wave and lead-free reflow profiles up to 260°C peak. Its DO-201AD package withstands JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements prior to assembly.

What is the maximum allowable PCB trace width reduction for MUR4L20H at 4 A continuous current?

At 4 A continuous DC current and 40°C ambient, MUR4L20H's 15°C/W RθJL allows use of 0.8 mm wide × 35 µm thick external copper traces without exceeding 175°C junction temperature. Internal layer routing must maintain ≥1.2 mm width or add thermal vias to inner ground planes to manage heat dissipation effectively.

How does MUR4L20H's 25 ns trr compare to standard fast recovery diodes in efficiency terms?

MUR4L20H's 25 ns trr reduces reverse recovery charge (Qrr) to approximately 12–14 nC, cutting switching losses by 30–40% versus 75 ns standard fast diodes in 300 kHz converters. This directly improves full-load efficiency by 0.8–1.2% in 12 V output stages, validated in TSC Application Note AN-MUR4Lx-01.

Does MUR4L20H require derating above 100°C ambient temperature?

Yes - MUR4L20H's forward current rating must be linearly derated above 75°C ambient, reaching 2.0 A at 125°C and 0 A at 175°C, per its forward current derating curve (Fig.1). Derating ensures junction temperature remains within the 175°C absolute maximum, preserving reliability in sealed enclosures or high-ambient industrial settings.