Taiwan Semiconductor Corporation MUR4L60H

Overview

MUR4L60H from Taiwan Semiconductor is an AEC-Q101-qualified ultra-fast recovery rectifier diode rated for 4 A average forward current, 600 V repetitive peak reverse voltage, and 50 ns reverse recovery time, deployed in high-frequency switching power supplies and freewheeling paths in automotive-grade DC-DC converters.

For engineers reviewing the MUR4L60H datasheet, MUR4L60H pinout, MUR4L60H application, or MUR4L60H equivalent, key selection criteria include its DO-201AD package, 1.28 V max forward voltage at 4 A/25°C, 250 µA max reverse leakage at 125°C, 125 A surge rating, and junction-to-lead thermal resistance of 15 °C/W.

Technical Context

This single-die, glass-passivated silicon rectifier operates with ultra-fast recovery (trr ≤ 50 ns) to minimize switching losses in high-frequency topologies such as synchronous buck converters and flyback inverters. Its 175 °C maximum junction temperature and AEC-Q101 qualification support under-hood automotive use where thermal robustness and reliability are critical.

The device features pure tin-plated leads compliant with J-STD-002 solderability and meets JESD201 Class 2 whisker resistance. Its DO-201AD case delivers 36 °C/W junction-to-ambient thermal resistance and UL 94V-0 flammability-rated molding compound.

Key Specifications

Pinout & Package

Package: DO-201AD - axial-leaded, molded plastic case with cathode band marking; 5.6 mm diameter, 9.5 mm body length, 25.4 mm minimum lead length; UL 94V-0 rated, RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH4L06S and MUR460E, the MUR4L60H provides verified AEC-Q101 qualification and tighter VF tolerance (1.28 V vs. 1.35 V/1.25 V), making it the only option qualified for safety-critical automotive power stages where process traceability and stress validation are mandatory.

Availability

MUR4L60H is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode inverters, and renewable energy charge controllers requiring stable component supply with guaranteed AEC-Q101 compliance and long-term production continuity.

Supply support for MUR4L60H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The MUR4L60H belongs to TSC's AEC-Q101-qualified ultra-fast rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in harsh-environment automotive and industrial applications.

FAQ

What is the maximum junction temperature rating for the MUR4L60H?

The MUR4L60H has a maximum junction temperature (TJ) rating of +175°C, enabling operation in high-ambient environments such as under-hood automotive locations or enclosed industrial enclosures. This rating is validated per AEC-Q101 stress testing and supports continuous operation up to 175°C when thermal design limits junction rise within specification. The MUR4L60H maintains stable electrical parameters-including reverse leakage and forward voltage-across this full range.

Is the MUR4L60H pin-compatible with standard DO-201AD rectifiers like the 1N5408?

No-the MUR4L60H uses the DO-201AD package but is not functionally or electrically interchangeable with general-purpose rectifiers like the 1N5408. While both share the same mechanical outline and axial lead configuration, the MUR4L60H is optimized for ultra-fast recovery (50 ns) and high-temperature operation, whereas the 1N5408 has slow recovery (>2000 ns) and lower voltage rating. Substituting them without circuit revalidation risks excessive switching loss and thermal runaway. Always verify layout and drive conditions for the MUR4L60H.

Does the MUR4L60H require heatsinking in a 4 A continuous application?

Heatsinking is recommended for sustained 4 A operation above 60°C ambient, especially with limited airflow. With RθJA = 36°C/W and 1.28 V VF, power dissipation reaches ~5.1 W at full load, resulting in ~184°C junction rise above ambient-exceeding the 175°C limit. Using a copper pour or clip-on heatsink to reduce RθJA below 25°C/W or limiting duty cycle keeps the MUR4L60H within safe operating area. Derating curves in the MUR4L60H datasheet confirm 4 A is sustainable only up to ~45°C ambient with natural convection.

What does the "H" suffix signify in MUR4L60H?

The "H" suffix in MUR4L60H explicitly denotes AEC-Q101 qualification-certifying that the device has passed rigorous stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing per automotive reliability standards. This distinguishes it from the non-H variant (MUR4L60), which shares identical electrical specs but lacks automotive qualification documentation and traceability. For automotive Tier-1 BOMs, only the MUR4L60H satisfies OEM requirements.

How does the MUR4L60H compare to Schottky rectifiers in 600 V applications?

The MUR4L60H is a silicon PN-junction ultra-fast rectifier-not a Schottky-and is uniquely suited for 600 V applications where Schottky diodes are unavailable due to material limitations. While Schottkys offer lower VF, they typically max out at ~200 V. At 600 V, the MUR4L60H delivers best-in-class trr (50 ns) and VF (1.28 V) among PN devices, bridging the gap between standard FRDs and unattainable high-voltage Schottkys. Its glass passivation also provides superior long-term stability versus early-generation fast rectifiers.