Taiwan Semiconductor Corporation MUR820H

Overview

MUR820H from Taiwan Semiconductor is an AEC-Q101-qualified ultra-fast recovery rectifier diode in TO-220AC package, rated for 8 A average forward current and 200 V repetitive peak reverse voltage, with 25 ns reverse recovery time and 0.975 V max forward voltage at 8 A and 25°C - used in automotive DC-DC converters and switching-mode power supplies.

For engineers reviewing the MUR820H datasheet, MUR820H pinout, MUR820H application, or MUR820H equivalent, key selection criteria include its AEC-Q101 qualification, 25 ns trr, 100 A surge rating, thermal resistance of 3 °C/W (junction-to-case), and compatibility with high-frequency switching topologies requiring low recovery loss.

Technical Context

The MUR820H employs a glass-passivated single-die silicon junction optimized for ultra-fast recovery, enabling efficient operation in hard-switched SMPS and freewheeling paths where low reverse recovery charge (Qrr) and minimal tail current are critical. Its 25 ns trr is measured under standardized conditions (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A).

Thermally, the device features a junction-to-case thermal resistance of 3 °C/W, supporting reliable 8 A continuous conduction when mounted to heatsinks per JESD 201 Class 2 whisker-tested matte tin leads. It operates across –55°C to +175°C junction temperature range.

Key Specifications

Pinout & Package

Package: TO-220AC - 3-lead through-hole package with isolated tab (cathode-connected tab), UL 94V-0 molding compound, matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH8R02DJF, MUR820H adds AEC-Q101 assurance for automotive use; compared with MUR820E, it offers tighter trr (25 ns vs. 30 ns) and lower VF (0.975 V vs. 0.99 V), yielding measurable efficiency gain in high-frequency, thermally constrained designs.

Availability

MUR820H is available at Aetrix Electronics and suitable for automotive power conversion, industrial SMPS, telecom rectification, and EV auxiliary supply applications requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for MUR820H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The MUR820H belongs to TSC's MURx series of ultra-fast recovery rectifiers, engineered specifically for high-efficiency, high-reliability switching power supplies in automotive and industrial environments where fast recovery, low VF, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature rating for the MUR820H?

The MUR820H has a maximum junction temperature (TJ MAX) of +175°C, validated across its full operating range from –55°C to +175°C. This rating supports use in under-hood automotive locations and high-ambient industrial enclosures. Thermal design must maintain junction temperature below this limit using the specified RθJC of 3 °C/W and appropriate heatsinking. The MUR820H datasheet confirms this value under Absolute Maximum Ratings.

Is the MUR820H pin-compatible with standard TO-220AC rectifiers like the 1N5408?

No, the MUR820H is not functionally or thermally interchangeable with general-purpose rectifiers such as the 1N5408. While both use TO-220AC packaging, the MUR820H is an ultra-fast recovery device (25 ns trr, 0.975 V VF) versus the 1N5408's slow recovery (~2 µs trr, ~1.2 V VF). Substituting without circuit re-evaluation risks increased switching loss, EMI, and thermal runaway. The MUR820H requires layout attention to its cathode-tab connection and thermal interface.

Does the MUR820H have a cathode-connected tab?

Yes, the MUR820H uses a TO-220AC package with the cathode electrically connected to the metal tab. This configuration is confirmed in the package outline and marking diagram in the official TSC datasheet. When mounting to a heatsink, electrical isolation (e.g., mica washer or insulating pad) is required unless the cathode node is at chassis ground potential. The anode and cathode leads are on pins 1 and 2 respectively, with the tab serving as the third cathode terminal.

What is the reverse leakage current specification for the MUR820H at elevated temperature?

The MUR820H specifies a maximum reverse leakage current (IR) of 250 µA at TJ = 100°C and rated VR, per the Electrical Specifications table. At 25°C, IR is limited to 5 µA. This elevated leakage at high temperature is typical for silicon PN-junction rectifiers and must be accounted for in high-impedance bias networks or precision hold-up circuits. The MUR820H datasheet provides IR vs. VR curves confirming this behavior up to 175°C.

How does the "H" suffix in MUR820H affect its specifications compared to MUR820?

The "H" suffix in MUR820H denotes AEC-Q101 qualification - it does not alter electrical or thermal parameters versus the non-H MUR820. Both share identical VRRM (200 V), IF (8 A), trr (25 ns), VF (0.975 V max), and RθJC (3 °C/W). The "H" version undergoes additional stress testing (HTOL, TC, HAST, etc.) per AEC-Q101 Rev D, with full traceability and lot-level reporting. No derating or parameter difference is introduced by the "H" suffix itself.