Infineon Technologies ND242S10KHPSA1

Overview

ND242S10KHPSA1 from Infineon Technologies (formerly EUPEC) is a 1000 V, 240 A average forward current dual-branch press-pack thyristor module with common cathode configuration, rated for 9300 A non-repetitive surge current at 25°C and 1.55 V max forward voltage at 800 A and T_vj = 150°C, used in high-power industrial rectification and phase-controlled AC/DC conversion.

For engineers reviewing the ND242S10KHPSA1 datasheet, ND242S10KHPSA1 pinout, ND242S10KHPSA1 application, or ND242S10KHPSA1 equivalent, key selection criteria include repetitive peak reverse voltage (V_RRM = 1000 V), thermal resistance junction-to-case (R_thJC = 0.15 °C/W per arm), surge current rating (I_FSM = 9300 A), and pressure-contact Si pellet construction with AlN isolation.

Technical Context

This device implements a dual-arm, common-cathode thyristor topology optimized for line-commutated high-voltage DC drives and medium-frequency induction heating inverters. Each arm supports 240 A average forward current at 94°C case temperature and features 150°C maximum junction temperature with 0.5 mΩ slope resistance and 1.1 V threshold voltage.

Transient thermal impedance Z_thJC is characterized analytically per arm using seven RC network elements (e.g., R_thn = 0.0031–0.0529 °C/W, τ_n = 0.008–3.06 s), enabling accurate thermal modeling under sinusoidal or trapezoidal load currents up to 1000 A peak.

Key Specifications

Pinout & Package

ND242S10KHPSA1 is housed in a press-pack module with M8 mechanical mounting and dual-terminal electrical interface: two anode terminals (A1, A2) and one shared cathode terminal (K). The package uses silicon pellets with pressure-contact metallization and aluminum nitride (AlN) internal insulation, requiring controlled torque (12 Nm ±10% on M2 terminals, 6 Nm ±15% on M1 mounting bolts) for reliable thermal and electrical contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power thyristor module applications.

Compared with SKKT 200/12 E and TT122N12KOF, ND242S10KHPSA1 delivers optimal balance of 1000 V blocking, 240 A current, and dual-arm common-cathode integration-enabling compact, low-inductance 12-pulse rectifier designs without thermal or voltage compromise.

Availability

ND242S10KHPSA1 is available at Aetrix Electronics and suitable for industrial DC drives, medium-frequency induction heating, HVDC converters, and static VAR compensators requiring stable component supply and long-term production continuity.

Supply support for ND242S10KHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's high-power thyristor module product line, engineered for ruggedized line-commutated applications in energy transmission, heavy industry, and precision thermal processing.

FAQ

What is the recommended mounting torque for ND242S10KHPSA1 terminals?

The electrical terminal connection torque (M2) is 12 Nm with a tolerance of +5%/−10%, while the mechanical mounting bolt torque (M1) is 6 Nm ±15%. These values ensure reliable pressure contact between Si pellets and AlN baseplate without die fracture or contact resistance drift under thermal cycling.

Does ND242S10KHPSA1 support common-anode configuration?

Yes-ND242S10KHPSA1 is offered in common-cathode configuration as standard, but Infineon confirms the DD242S platform can be supplied with common-anode topology upon request. Pinout and thermal performance remain identical; only terminal polarity assignment changes.

How is transient thermal behavior modeled for this module?

Transient thermal impedance Z_thJC per arm is defined by seven analytical RC elements (R_thn and τ_n values provided in datasheet Fig. 3), enabling SPICE-compatible thermal simulation under arbitrary current waveforms including 60 Hz rectified plus 2–10 kHz ripple components.

What is the creepage distance and why does it matter?

The creepage distance is 17 mm across the AlN ceramic baseplate. This value ensures safe isolation between high-voltage terminals in polluted industrial environments per IEC 60664-1, preventing surface tracking failure at 1000 V DC operating voltage under humidity and dust exposure.