onsemi NP1100SBT3G

Overview

NP1100SBT3G from onsemi is a bidirectional thyristor surge protector (TSPD) designed for overvoltage clamping in telecom line interfaces. It features 90 V peak off-state voltage (V_DRM), 130 V breakover voltage (V_BO), 4.0 V on-state voltage (V_T), 150 mA holding current (I_H), and supports 10×360 µs surge waveforms up to 75 A(pk), protecting central office and customer premises equipment.

For engineers reviewing the NP1100SBT3G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, SMB package dimensions, GR-1089-CORE/IEC 61000-4-5 compliance data, and real-world telecom surge protection use cases - all confirmed from onsemi's official NP0640S/D Rev. 5 datasheet.

Technical Context

The NP1100SBT3G operates as a bidirectional crowbar device that latches into low-impedance conduction upon exceeding V_BO in either polarity, diverting surge energy away from protected circuitry. Its 5.0 kV/µs critical dv/dt rating ensures stable blocking under fast transients, while 500 A/sec di/dt capability supports robust triggering without false turn-on.

Designed for telecom primary protection, it meets ITU-T K.20/K.21/K.45, TIA-968-A, and GR-1089-CORE requirements with validated 10×360 µs surge current handling up to 75 A(pk) in Class A configuration. Thermal resistance of 90 °C/W (Junction-to-Ambient) enables reliable operation at TJ = −40 to +150 °C.

Key Specifications

Pinout & Package

NP1100SBT3G uses the SMB (DO-214AA, Case 403C) surface-mount package with two terminals: MT1 and MT2. This compact 4.06 mm × 3.30 mm × 2.11 mm package supports automated assembly and provides thermal performance suitable for telecom PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar thyristor surge protector applications.

Compared with NP1100SBT3G, NP1100SAT3G offers identical protection performance with alternate marking, while NP1100SCT3G provides higher 150 A(pk) surge headroom at the cost of greater thermal stress - selection depends on required compliance class and board-level thermal design margin.

Availability

NP1100SBT3G is available at Aetrix Electronics and suitable for central office line cards, xDSL customer premises equipment, and VoIP gateway FXS ports requiring stable component supply, RoHS-compliant packaging, and GR-1089-CORE validated surge protection.

Supply support for NP1100SBT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and communications markets.

The NP Series Thyristor Surge Protectors were developed specifically for telecom infrastructure protection - delivering bidirectional, low-capacitance, high-surge-capability devices meeting GR-1089-CORE, ITU-T K.20/21/45, and IEC 61000-4-5 standards.

FAQ

What is the peak off-state voltage rating of the NP1100SBT3G?

The NP1100SBT3G has a peak off-state voltage (V_DRM) rating of 90 V for both polarities. This value represents the maximum repetitive voltage the device can block without entering conduction under normal operating conditions, making it suitable for telecom lines with nominal DC voltages up to ~100 V. The NP1100SBT3G maintains this rating across its full operating temperature range of −40°C to +150°C.

How does the NP1100SBT3G differ from the NP1100SAT3G and NP1100SCT3G?

The NP1100SBT3G shares identical electrical specifications (V_DRM, V_BO, V_T, I_H) and SMB package with NP1100SAT3G and NP1100SCT3G - differing only in series rating code (B vs A vs C) and corresponding surge classification. NP1100SBT3G is rated Class B (50 A(pk) on 10×560 µs), while NP1100SAT3G is Class A (75 A(pk) on 10×360 µs) and NP1100SCT3G is Class C (150 A(pk) on 10×360 µs). All three are marked differently ("110B", "011A", "110C") but electrically interchangeable within their respective surge classes.

Is the NP1100SBT3G RoHS-compliant and lead-free?

Yes, the NP1100SBT3G is RoHS-compliant and lead-free, as indicated by the "G" suffix in its part number and confirmed in onsemi's NP0640S/D datasheet. It uses a Pb-free SMB (DO-214AA) package compatible with standard lead-free reflow profiles per JEDEC J-STD-020. The device meets EU RoHS Directive 2011/65/EU and is suitable for environmentally regulated telecom and industrial applications.

What surge waveforms is the NP1100SBT3G rated for?

The NP1100SBT3G is rated for multiple standardized surge waveforms: 2×10 µs (150 A(pk)), 10×160 µs (90 A(pk)), 10×360 µs (75 A(pk)), 10×560 µs (50 A(pk)), 10×700 µs (75 A(pk)), and 10×1000 µs (50 A(pk)). These ratings align with GR-1089-CORE, TIA-968-A, and ITU-T K.20/21/45 test requirements. The NP1100SBT3G's Class B designation corresponds to its 50 A(pk) rating on the 10×560 µs waveform.

Does the NP1100SBT3G require external triggering circuitry?

No, the NP1100SBT3G is a self-triggering bidirectional thyristor surge protector - it requires no external gate drive or control signals. Conduction initiates automatically when the applied voltage exceeds its breakover voltage (V_BO = 130 V) in either polarity. Once triggered, it remains latched in the on-state until current falls below its holding current (I_H = 150 mA), then resets to high-impedance blocking mode.