onsemi NP2100SBT3G

Overview

NP2100SBT3G from onsemi is a bidirectional thyristor surge protector (TSPD) designed for overvoltage clamping in telecom line interfaces. It features 180 V peak off-state voltage (V_DRM), 240 V breakover voltage (V_BO), 4.0 V on-state voltage at 1.0 A, 150 mA holding current, and supports 10×1000 µs surge currents up to 50 A(pk) per GR-1089-CORE. It is used in central office and customer premises equipment to meet IEC 61000-4-5 and ITU-T K.20/21 compliance.

For engineers reviewing the NP2100SBT3G datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional crowbar action, SMB package thermal resistance (90 °C/W), 37 pF capacitance at 1 MHz, 5 kV/µs critical dv/dt rating, and RoHS-compliant lead-free construction.

Technical Context

The NP2100SBT3G operates as a voltage-triggered bilateral crowbar device: it remains high-impedance below V_DRM (180 V), switches to low-impedance conduction above V_BO (240 V) in either polarity, and latches until current falls below IH (150 mA). Its 5 kV/µs dv/dt immunity prevents false triggering during fast transients.

It delivers defined surge handling per standardized waveforms - 50 A(pk) for 10×1000 µs (GR-1089-CORE), 75 A(pk) for 10×360 µs, and 150 A(pk) for 2×10 µs - with thermal resistance of 90 °C/W enabling reliable operation in FR4 PCB layouts without heatsinking under repetitive surge conditions.

Key Specifications

Pinout & Package

NP2100SBT3G uses the SMB (DO-214AA, Case 403C) surface-mount package - a 2-pin, bidirectional device with no polarity marking. The package measures 4.06 mm × 3.30 mm × 2.11 mm (L × W × H) and features gull-wing leads compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar thyristor surge protector applications.

Compared with NP2100SAT3G and NP2100SCT3G, the NP2100SBT3G offers identical surge clamping behavior, thermal performance, and signal-line capacitance - differing only in manufacturer-marked lot identification ("210B") - making all three fully substitutable in design-in and production without layout or validation changes.

Availability

NP2100SBT3G is available at Aetrix Electronics and suitable for central office line cards, DSLAM port protection, and customer premises equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant surge suppression.

Supply support for NP2100SBT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and communication markets.

The NP Series TSPDs were developed specifically for telecom infrastructure protection - delivering standardized, high-reliability crowbar action in compact SMB packages to replace legacy discrete SCR-based protectors in GR-1089-CORE-certified systems.

FAQ

What is the maximum surge current rating for NP2100SBT3G under GR-1089-CORE 10×1000 µs waveform?

The NP2100SBT3G is rated for 50 A(pk) under the GR-1089-CORE 10×1000 µs double-exponential decay waveform. This value is specified in the "SURGE RATINGS" table on page 3 of the official datasheet (Rev. 5, May 2008), and reflects non-repetitive short-circuit current capability with proper PCB thermal management. The NP2100SBT3G maintains this rating without degradation when mounted on a 3″×4.5″ FR4 board with 2 oz copper.

Does NP2100SBT3G require external gate control or biasing circuitry?

No, the NP2100SBT3G is a passive, voltage-triggered thyristor device with no gate terminal. It operates autonomously: conduction initiates when voltage across MT1–MT2 exceeds V_BO (240 V) in either polarity, and latches until current drops below I_H (150 mA). No external bias, timing components, or control signals are needed - the NP2100SBT3G functions as a self-contained crowbar.

Can NP2100SBT3G be used in DC power line protection applications?

The NP2100SBT3G is not recommended for standalone DC power rail protection. Its 150 mA holding current requires the protected circuit to interrupt current flow after clamping - a condition naturally met in AC-coupled telecom lines but not in constant-current DC supplies. For DC power rails, dedicated resettable fuses or active OVP ICs are preferred. The NP2100SBT3G is engineered for AC/telecom signal-line protection where current naturally crosses zero.

What is the thermal resistance (R_θJA) of NP2100SBT3G, and how does it affect layout?

The NP2100SBT3G has a junction-to-ambient thermal resistance of 90 °C/W when mounted on a 3″×4.5″ FR4 PCB with 2 oz copper in a 3×3 inch pattern per EIA/JESD51-3. This value means each watt of surge dissipation raises junction temperature by 90 °C above ambient. To ensure reliability, designers must limit average power dissipation and avoid placing heat-sensitive components within 5 mm of the NP2100SBT3G's SMB body.

How does the 37 pF capacitance of NP2100SBT3G impact high-speed data lines like VDSL2?

The 37 pF capacitance of NP2100SBT3G - measured at 1 MHz with 2 Vdc bias - introduces negligible insertion loss below 30 MHz, making it suitable for VDSL2 (up to 30 MHz) and G.fast (up to 212 MHz) when placed after line transformers. Unlike higher-capacitance MOVs or TVS diodes, this low value avoids signal attenuation, phase distortion, and echo on symmetric DSL pairs - a key reason the NP2100SBT3G is specified in carrier-grade DSLAM reference designs.